IRFR024N
Description:
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
D
G
Features:
S
CR
MI
JS
1) VDS=60V,ID=20A,RDS(ON)
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免费人工找货- 国内价格
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