IRFR024N
Description：
This N-Channel MOSFET uses advanced trench technology and
design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
D
G
Features：
S
CR
MI
JS
1) VDS=60V,ID=20A,RDS(ON)
很抱歉，暂时无法提供与“IRFR024N”相匹配的价格&库存，您可以联系我们找货
免费人工找货- 国内价格
- 5+0.87000
- 20+0.79500
- 100+0.72000
- 500+0.64500
- 1000+0.61000
- 2000+0.58500
