AO3402

AO3402 N-Channel30-V(D-S)MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.055Ω@ 10V 3 30V 1.GATE 4.0 A 0.070Ω@ 4.5V 2.SOURCE 0.100Ω@ 2.5V 3.DRAIN JS 1 2 MI General FEATURE Equivalent Circuit CR ●TrenchFET Power MOSFET ●Lead free product is acquired O ●Surface mount package co mi Se APPLICATION ●Load Switch for Portable Devices ●DC/DC Converter TA=25°C Pulsed Drain Current Power Dissipation A B TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient C Maximum Junction-to-Lead Maximum 30 Units V ±12 V ID 4 A IDM 15 PD 1.25 TJ, TSTG A t ≤ 10s Steady-State Steady-State W °C -55 to 150 Symbol A r to uc Continuous Drain Current A nd Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage RθJA RθJL Typ 70 100 63 www.jsmsemi.com Max 90 125 80 Units °C/W °C/W °C/W 第１／５页 AO3402 N-Channel30-V(D-S)MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Min ID=250µA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=24V, VGS=0V 1 µA IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±12V 100 nA Gate Threshold Voltage 1.2 On state drain current JS VDS=VGS ID=250µA VGS=4.5V, VDS=5V 0.8 ID(ON) V A VGS=10V, ID=4A 50 55 mΩ RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=2.3A 65 70 90 8 0.8 100 gFS VSD VGS=2.5V, ID=1.5A Forward Transconductance VDS=5V, ID=4A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current mΩ mΩ 1.2 2.5 S V A Symbol Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge 4.34 0.6 1.38 nC nC nC 3.3 1 ns ns VGS=4.5V, VDS=15V, ID=4A Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time VGS=10V, VDS=15V, RL=3.75Ω, RGEN=6Ω Body Diode Reverse Recovery Time IF=4A, dI/dt=100A/µs Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs r to uc Qrr VGS=0V, VDS=0V, f=1MHz pF pF pF Ω nd tf trr V co Rg Units 390 54.5 41 3 VGS=0V, VDS=15V, f=1MHz mi Output Capacitance Reverse Transfer Capacitance Max 10 Se Coss Crss tD(off) Typ O DYNAMIC PARAMETERS Ciss Input Capacitance Qgd tD(on) tr 0.6 CR IS Parameter MI Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage 21.7 2.1 12 ns ns ns nC 6.3 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. www.jsmsemi.com 第２／５页 AO3402 N-Channel30-V(D-S)MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V 3V 12 8 VDS=5V 4.5V 6 ID(A) ID (A) 9 2.5V 6 4 125°C JS 3 MI 0 0 1 2 VGS=2V 2 25°C 0 3 4 5 0 0.5 CR O 150 90 VGS=4.5V 60 30 1.6 2.5 3 3.5 VGS=4.5V VGS=10V 1.4 1.2 VGS=2.5V 1 co VGS=10V 0 0.8 0 2 4 6 8 10 0 25 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature r to uc 200 1.0E+01 1.0E+00 150 50 nd ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage ID=2A 1.0E-01 125°C 100 IS (A) RDS(ON) (mΩ) 2 mi Se RDS(ON) (mΩ) VGS=2.5V 120 1.5 1.8 Normalized On-Resistance 180 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 50 25°C 1.0E-05 1.0E-06 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.jsmsemi.com 第３／５页 AO3402 N-Channel30-V(D-S)MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=15V ID=4A 500 Capacitance (pF) VGS (Volts) 4 3 2 JS 1 0 1 300 200 Coss 100 MI 0 Ciss 400 2 0 3 4 5 0 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1s 10ms 1.0 1s 10 1 10 100 0 0.001 1 10 100 1000 r to uc ZθJA Normalized Transient Thermal Resistance 0.1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W 0.01 nd VDS (Volts) co DC 0.1 10 30 5 10s 0.1 25 15 10µs Power (W) 1ms 20 mi ID (Amps) 100µs 15 TJ(Max)=150°C TA=25°C Se RDS(ON) limited 10 20 O 10.0 5 VDS (Volts) Figure 8: Capacitance Characteristics CR TJ(Max)=150°C TA=25°C 100.0 Crss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance www.jsmsemi.com 第４／５页 AO3402 N-Channel30-V(D-S)MOSFET SOT-23 Package Outline Dimensions JS MI Se co www.jsmsemi.com r to uc nd SOT-23 Suggested Pad Layout Dimensions In Inches Min Max 0.035 0.045 0.000 0.004 0.035 0.041 0.012 0.020 0.003 0.006 0.110 0.118 0.047 0.055 0.089 0.100 0.037 TYP 0.071 0.079 0.022 REF 0.012 0.020 0° 8° mi Dimensions In Millimeters Min Max 0.900 1.150 0.000 0.100 0.900 1.050 0.300 0.500 0.080 0.150 2.800 3.000 1.200 1.400 2.250 2.550 0.950 TYP 1.800 2.000 0.550 REF 0.300 0.500 0° 8° O A A1 A2 b c D E E1 e e1 L L1 θ CR Symbol 第５／５页