AD30P47D3

AD30P47D3 Pch -30V -47 A Power MOSFET Outline V DS -30V R DS(ON)（typ. ） PDFN3030 8 mΩ ID -47A PD 59W Inner Circle Features 1、Low on – resistance 2、High power package (PDFN3030) 3、Pb-free lead plating ; RoHS compliant 4、Halogen free Packaging specifications 5、100% Rg and UIS tested Reel Size(mm) Embossed Tape 330 Tape width(mm) 12 Packing Applications Switching Basic ordering unit (pcs) Taping code 5000 D3 Marking AD30P47D3 Absolute maximum ratings（TC=25℃） Symbol Value Unit -30 ±25 V V -47 A Continuous Drain Current (TC=100℃) -33 A IDM Pulesd Drain Current -188 A IAS EAS Avalanche Current Single Pulsed Avalanche Energy Note3 Maximum Power Dissipation (TC =25℃) -23 27 A mJ 38 Power Dissipation – Derate above 25℃ 4.1 W W/℃ Operating,Storage Temperature Range -55~150 ℃ Max. Unit ℃/ W VDS VGS ID PD TJ,TSTG Symbol RθJA RθJC Parameter Drain-Source Voltage (VGS=0V) Gate-Source Voltage (VGS=0V,static) Continuous Drain Current (TC=25℃) Note3 Note1 Parameter Thermal Resistance,Junction-to-Ambient Thermal Resistance,Junction-to-Case Note2 © Adamant Semiconductor Co., Ltd. All rights reserved. Note2 1 62 2.1 ℃/ W Version 1.0 AD30P47D3 Electrical Characteristics(TJ=25℃,unless otherwise noted) Static State Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=-250μA -30 --- --- V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V --- --- -1 μA IGSS Gate -Source Leakage Current VGS=±25V, VDS=0V --- --- ±100 nA RDS(ON) Drain-Source On-stage Resistance VGS=-10V,ID=-10A --- 8 10 VGS=-4.5V,ID=-8A --- 11 14 VGS(th) Gate Threshold Voltage VDS= VGS,ID=-250μA -1.2 -1.6 -2.0 V Forward Transconductance VDS=-10V , ID=-10A --- 10 --- S Unit gfs Note3 mΩ Dynamic Characteristics Note4 Symbol Parameter Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-on delay Time tr td(off) tf Test Conditions Min. Typ. Max. VDS=-15V VGS=-10 V ID=-10A --- 35 --- --- 10.8 --- --- 10.6 --- VDS=-15V VGS=-10V RG=10Ω ID=-1A --- 24.5 --- --- 10.5 --- --- 156.8 --- --- 50 --- VDS=-15V VGS=0V f=1MHz --- 3300 --- --- 410 --- --- 280 --- f=1MHz --- 8.5 --- Test Conditions Min. Typ. Max. Unit --- --- -47 A --- --- -94 A Rise time Turn-off delay Time Fall time Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Rg Gate Resistance nC ns pF Ω Drain- Source Diode CharacteristicsNote3 Symbol Parameter IS Continuous Source Current ISM Pulsed Source Current VDS=VGS=0V Force Current VSD Diode Forward Voltage VGS=0V,IS=-2.5A --- --- -1.2 V trr Reverse Recovery Time --- 35 --- ns Qrr Reverse Recovery Charge VGS=0V,IS=-10A di/dt=100A/µs --- 48 --- nC Notes: 1 Pulse width limited by maximum junction temperature TJ(MAX)=150°C. 2 The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. 3 Pulse test : Pulse Width≤300uS, Duty Cycle≤2％. EAS condition：TJ=25℃,VDD=-20V,VG=-10V,L=0.1mH,IAS=-21A,Rg=25Ω 4 Guaranteed by design,not subject to production. © Adamant Semiconductor Co., Ltd. All rights reserved. 2 Version 1.0 AD30P47D3 Electrical Characteristics Diagrames Figure 1. Continuous Drain Current vs. TC Figure 2. Normalized RDSON vs. TJ Figure 3. Normalized Vth vs. TJ Figure 4. Gate Charge Waveform Figure 5. Normalized Transient Impedance Figure 6. Maximum Safe Operation Area © Adamant Semiconductor Co., Ltd. All rights reserved. 3 Version 1.0 AD30P47D3 PDFN3030 PACKAGE INFORMATION © Adamant Semiconductor Co., Ltd. All rights reserved. 4 Version 1.0