ZMSA005N04HNC

ZMJ SEMICONDUCTORS CO., LTD ZMSA005N04HNC 40V N-Channel Power SpeedFET ● General Description ● Product Summary It combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). VDS= 40V RDS(ON) = 0.58mΩ ID= 360A ● Features ■AEC-Q101 Qualified ■Low RDS(ON) to minimize conductive loss D ■Low Gate Charge for fast switching D D G D ■Low Thermal resistance S pin1 ●Application S pin1 pin1 ■BLDC Motor driver GS SS D S S D D D D DFN5*6 ■DC-DC ■Load Switch HF ●Ordering Information: Part NO. ZMSA005N04HNC Marking ZMS005N04H Packing Information REEL TAPE Basic ordering unit (pcs) 3000 ●Absolute Maximum Ratings（TC=25℃） Parameter Symbol Conditions Value Unit Drain-Source Voltage VDS 40 V Gate-Source Voltage① VGS ±20 V ID TC=25℃ 360 A ID TC=75℃ 299 A ID TC=100℃ 259 A Pulsed Drain Current IDM Pulsed; tp ≤ 10 µs; Tmb = 25 °C; 1080 A Total Power Dissipation PD TC=25℃ 188 W Total Power Dissipation PD TA=25℃ 4.2 W Operating Junction Temperature TJ -55 to +175 ℃ Storage Temperature TSTG -55 to +175 ℃ Single Pulse Avalanche Energy EAS L=0.1mH, VGS=10V, Rg=25Ω, 480 mJ L=0.5mH, VGS=10V, Rg=25Ω, 768 mJ Continuous Drain Current ESD Level (HBM) Rev. D - April，2024 CLASS 2 1/7 http://www.zmjsemi.com ZMJ SEMICONDUCTORS CO., LTD ZMSA005N04HNC 40V N-Channel Power SpeedFET ●Thermal resistance Parameter Symbol Thermal resistance, junction - case Min. RthJC Typ. Max. Unit - 0.8 °C/W Thermal resistance, junction-ambient RthJA ② - 36 °C/W Soldering temperature Tsold - 260 °C Typ. Max. Unit ●Electronic Characteristics Parameter Symbol Condition Min. Drain-Source Breakdown Voltage BVDSS VGS =0V, ID =250uA 40 Gate Threshold Voltage VGS(TH) VGS =V DS, ID =250uA 2 Drain-Source Leakage Current IDSS VGS=0V, Gate- Source Leakage Current IGSS VGS=±20V, VDS = 0V Static Drain-source On Resistance Forward Transconductance Diode Forward Voltage V 2.7 VDS= 40V RDS(ON) VGS=10V, ID= 40A 0.58 gFS VDS =5V, ISD = 10A 30 VFSD VGS =0V, ISD = 40A 4 V 1.0 uA 100 nA 0.75 mΩ s 1.3 V Unit ●Dynamic characteristics Parameter Symbol Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate Risistance Rg Total gate charge Qg Gate - Source charge Qgs Gate - Drain charge Qgd Turn-ON Delay time tD(on) Turn-ON Rise time tr Turn-Off Delay time tD(off) Turn-Off Fall time Condition Min. Typ. Max. - 6900 - - 2100 - - 86 - - 1.4 - 94 - - 21 - - 26 - - 39 - ns VGS=10V,VDS=15V， - 42 - ns RG =3.3Ω, ID =20A - 31 - ns - 12 - ns f = 1MHz, VDS=25V f = 1MHz VDD = 15V, ID = 20A, VGS = 10V tf pF Ω nC Reverse Recovery Time tRR VDD=20V, dIS/dt = - 72 - ns Reverse Recovery Charge QRR 100A/us, IS=50A - 85 - nC Rev. D - April，2024 2/7 http://www.zmjsemi.com ZMJ SEMICONDUCTORS CO., LTD ZMSA005N04HNC 40V N-Channel Power SpeedFET Fig.1 Gate-Charge Characteristics Fig.2 Capacitance Characteristics Fig.3 Power Dissipation Fig.4 Typical output Characteristics Fig.5 Threshold Voltage V.S Junction Temperature Fig.6 Resistance V.S Drain Current VGS=10V VGS=10V Rev. D - April，2024 3/7 http://www.zmjsemi.com ZMJ SEMICONDUCTORS CO., LTD ZMSA005N04HNC 40V N-Channel Power SpeedFET Fig.7 On-Resistance VS Gate Source Voltage Fig.8 On-Resistance V.S Junction Temperature Figure 9. Diode Forward Voltage vs. Current Figure 10. Transfer Characteristics Fig.11 Safe Operating Area Fig.12 ID vs. Junction Temperature③ Rev. D - April，2024 4/7 http://www.zmjsemi.com ZMJ SEMICONDUCTORS CO., LTD ZMSA005N04HNC 40V N-Channel Power SpeedFET ●DFN5*6 Package Outline Rev. D - April，2024 5/7 http://www.zmjsemi.com ZMJ SEMICONDUCTORS CO., LTD ZMSA005N04HNC 40V N-Channel Power SpeedFET Note: ① Pulse : VGS=+20V/-20V, Duty cycle=50%,Tj=175℃, t=1000 hours; For DC ，the following test conditions can be passed: VGS=+20V/-10V, Tj=175℃, t=1000 hours； ② Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate； ③Practically the current will be limited by PCB, thermal design and operating temperature. VGS=10V. Disclaimer ● Reproducing and modifying information of the document is prohibited without permission from ZMJ SEMICONDDUCTORS CO.,LTD. ● ZMJ SEMICONDDUCTORS CO.,LTD. reserves the rights to make changes of the content herein the document anytime without notification. Please refer to our website for the latest document. ● ZMJ SEMICONDDUCTORS CO.,LTD. disclaims any and all liability arising out of the application or use of any product including damages incidentally and consequentially occurred. ● ZMJ SEMICONDDUCTORS CO.,LTD. does not assume any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. ● Applications shown on the herein document are examples of standard use and operation. Customers are responsible in comprehending the suitable use in particular applications. ZMJ SEMICONDDUCTORS CO.,LTD. makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. ● The products shown herein are not designed and authorized for equipments relating to human life and for any applications concerning life-saving or life-sustaining, such as medical instruments, aerospace machinery et cetera. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify ZMJ SEMICONDDUCTORS CO.,LTD. for any damages resulting from such improper use or sale. ● Since ZMJ uses lot number as the tracking base, please provide the lot number for tracking when complaining. Rev. D - April，2024 6/7 http://www.zmjsemi.com ZMJ SEMICONDUCTORS CO., LTD ZMSA005N04HNC 40V N-Channel Power SpeedFET Revision History Version Date Change A 2022.11.10 new B 2023.6.25 correct IDcurve C 2024.2.29 D 2024.4.16 correct CISS，QG Modified switch time, Dynamic characteristics Rev. D - April，2024 7/7 http://www.zmjsemi.com