MMBT5551

MMBT5551 HD-ST0.44 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features ● Complementary to MMBT5401 ● Ideal for Medium Power Amplification and Switching SOT- 23 Marking:   ● G1    Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW Thermal Resistance From Junction To Ambient 416 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ RΘJA C B E Electrical Characteristics (Ta=25℃ Unless otherwise specified） Parameter Symbol Collector-base breakdown voltage V(BR)CBO * Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current ICBO Emitter cut-off current IEBO DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Min Typ Max Unit IC=100µA, IE=0 180 V IC=1mA, IB=0 160 V IE=10µA, IC=0 6 V VCB=120V, IE=0 50 nA VEB=4V, IC=0 50 nA hFE(1) * VCE=5V, IC=1mA 80 hFE(2) * VCE=5V, IC=10mA 100 hFE(3) * VCE=5V, IC=50mA 50 300 VCE(sat)1* IC=10mA, IB=1mA 0.15 V * IC=50mA, IB=5mA 0.2 V VBE(sat)1 * IC=10mA, IB=1mA 1 V VBE(sat)2 * IC=50mA, IB=5mA 1 V 300 MHz 6 pF VCE(sat)2 fT Transition frequency Collector output capacitance Test conditions Cob VCE=10V,IC=10mA, f=100MHz 100 VCB=10V, IE=0, f=1MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE RANK L H RANGE 100-200 200-300 High Diode Semiconductor 1 Typical Characteristics Static Characteristic 18 COMMON EMITTER Ta=25℃ 80uA 15 COMMON EMITTER VCE=5V 60uA 50uA 9 40uA 6 30uA Ta=25℃ 100 IB=20uA 3 0 10 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1.0 VCE 12 1 COLLECTOR CURRENT IC IC 200 100 200 β=10 0.8 Ta=25℃ 0.6 Ta=100℃ 0.4 0.2 0.1 0.1 Ta=100℃ Ta=25℃ 0.01 1 10 COLLECTOR CURRENT VBE —— 100 IC 1 200 10 (mA) COLLECTOR CURRENT IC Cob / Cib 100 200 —— IC (mA) VCB / VEB COMMON EMITTER VCE=5V f=1MHz IE=0 / IC=0 CAPACITANCE C Ta=100℃ Ta=25℃ Cib (pF) IC (mA) 100 100 (mA) VCEsat —— B IC 0.3 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 10 (V) β=10 COLLECTOR CURRENT Ta=100℃ hFE 70uA 12 DC CURRENT GAIN (mA) IC COLLECTOR CURRENT hFE —— IC 500 90uA Ta=25℃ 10 1 0.2 0.4 0.6 BASE-EMITTER VOLTAGE fT —— 0.8 Cob 1 0.1 1.0 VBE(V) 10 1 10 REVERSE VOLTAGE IC PC 0.4 150 —— V 20 (V) Ta VCE=10V TRANSITION FREQUENCY fT COLLECTOR POWER DISSIPATION PC (W) (MHz) Ta=25℃ 100 50 0.3 0.2 0.1 0.0 1 10 3 COLLECTOR CURRENT IC (mA) 20 30 0 25 50 75 AMBIENT TEMPERATURE High Diode Semiconductor 100 Ta 125 150 (℃ ) 2 SOT-23 Package Outline Dimensions SOT-23 Suggested Pad Layout JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-SOT-23 30 High Diode Semiconductor 4