GS8331Q1

GS8331Q1 350KHZ Zero-Drift CMOS Rail-to-Rail IO Opamp with RF Filter Features  AEC-Q100 Qualified  Operating Temperature: -45°C ~ +125°C  Single-Supply Operation from +1.8V ~ +5.5V  Zero Drift: 0.01µV/°C (Typ)  Rail-to-Rail Input / Output  Embedded RF Anti-EMI Filter  Gain-Bandwidth Product: 350KHz (Typ@25°C)  Small Package:  Low Input Bias Current: 20pA (Typ @25°C) GS8331Q1 Available in SOT23-5 Package  Low Offset Voltage: 10uV (Max@25°C)  Quiescent Current: 25μA per Amplifier (Typ) General Description The GS8331Q1 amplifier is single/dual supply, micro-power, zero-drift CMOS operational amplifiers, the amplifiers offer bandwidth of 350 kHz, rail-to-rail inputs and outputs, and single-supply operation from 1.8V to 5.5V. GS8331Q1 uses chopper stabilized technique to provide very low offset voltage (less than 10µV maximum) and near zero drift over temperature. Low quiescent supply current of 25μA per amplifier and very low input bias current of 20pA make the devices an ideal choice for low offset, low power consumption and high impedance applications. The GS8331Q1 offers excellent CMRR without the crossover associated with traditional complementary input stages. This design results in superior performance for driving analog-to-digital converters (ADCs) without degradation of differential linearity. The GS8331Q1 is available in SOT23-5 package. The extended temperature range of -45oC to +125oC over all supply voltages offers additional design flexibility. Applications  Transducer Application  Handheld Test Equipment  Temperature Measurements  Battery-Powered Instrumentation  Electronics Scales Pin Configuration GS8331Q1 5 VDD OUT 1 VSS 2 4 IN- IN+ 3 SOT23-5 Figure 1. Pin Assignment Diagram November 2022-REV_V0 1/10 GS8331Q1 Absolute Maximum Ratings Condition Min Max -0.5V +7.5V Analog Input Voltage (IN+ or IN-) Vss-0.5V VDD+0.5V PDB Input Voltage Vss-0.5V +7V -45°C +125°C Power Supply Voltage (VDD to Vss) Operating Temperature Range Junction Temperature +160°C Storage Temperature Range -55°C Lead Temperature (soldering, 10sec) +150°C +260°C Package Thermal Resistance (TA=+25℃) SOT23-5, θJA 190°C/W ESD Susceptibility HBM 6KV MM 400V Note: Stress greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification are not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Package/Ordering Information MODEL CHANNEL ORDER NUMBER GS8331Q1 Single GS8331Q1-TR November 2022-REV_V0 PACKAGE PACKAGE MARKING DESCRIPTION OPTION INFORMATION SOT23-5 Tape and Reel,3000 8331Q1 2/10 GS8331Q1 Electrical Characteristics (At Vs=5V, TA = +25℃, VCM = VS/2, RL = 10KΩ, unless otherwise noted.) PARAMETER CONDITIONS MIN TYP MAX UNITS Input Offset Voltage (VOS) ±2 ±10 μV Input Bias Current (IB) 20 pA Input Offset Current (IOS) 10 pA VCM = 0V to 5V 110 dB RL = 10kΩ, VO = 0.3V to 4.7V 145 dB INPUT CHARACTERISTICS Common-Mode Rejection Ratio (CMRR) Large Signal Voltage Gain ( AVO) Input Offset Voltage Drift (ΔVOS/ΔT) 10 50 nV/℃ OUTPUT CHARACTERISTICS Output Voltage High (VOH) Output Voltage Low (VOL) Short Circuit Limit (ISC) RL = 100kΩ to - VS 4.998 V RL = 10kΩ to - VS 4.994 V RL = 100kΩ to + VS 5 mV RL = 10kΩ to + VS 20 mV RL =10Ω to - VS 20 mA 30 mA Output Current (IO) POWER SUPPLY Power Supply Rejection Ratio (PSRR) VS = 2.5V to 5.5V 115 dB Quiescent Current (IQ) VO = 0V, RL = 0Ω 25 μA Gain-Bandwidth Product (GBP) G = +100 350 KHz Slew Rate (SR) RL = 10kΩ 0.2 V/μs Voltage Noise (en p-p) 0Hz to 10Hz 1.1 μVP-P Voltage Noise Density (en) f = 1kHz 70 nV / Hz DYNAMIC PERFORMANCE NOISE PERFORMANCE November 2022-REV_V0 3/10 GS8331Q1 Typical Performance characteristics (TA=+25°C, Vs=5V, RL=10 kΩ connected to VS/2 and VOUT= VS/2, unless otherwise noted.) Output Voltage (50mV/div) CL=0pF G=+1 Large Signal Transient Response CL=0pF G=+1 Time(40µs/div) Time(4µs/div) Positive Overvoltage Recovery Negative Overvoltage Recovery VSY=±2.5V VIN=-200mVp-p (RET to GND) CL=0pF RL=10kΩ AV=-10 Output Voltage (50mV/div) Output Voltage (1V/div) Large Signal Transient Response VSY=±2.5V VIN=-200mVp-p (RET to GND) CL=0pF RL=10kΩ AV=-10 Time (50µs/div) Time (50µs/div) Open Loop Gain, Phase Shift vs. Frequency Supply Current vs. Temperature Open Loop Gain Frequency (Hz) November 2022-REV_V0 Supply Current (µA) Open Loop Gain (dB) Phase Shift VS=5.5V Vs=1.8V Temperature (℃) 4/10 GS8331Q1 Typical Performance characteristics (TA=+25°C, Vs=5V, RL=10 kΩ connected to VS/2 and VOUT= VS/2, unless otherwise noted.) Output Voltage Swing vs.Output Current at +3V Output Voltage Swing vs.Output Current at +5V 125℃ 25℃ -40℃ Sinking Current Output Current(mA) November 2022-REV_V0 Sourcing Current Output Voltage (V) Output Voltage (V) Sourcing Current 125℃ 25℃ -40℃ Sinking Current Output Current(mA) 5/10 GS8331Q1 Application Note Size GS8331Q1 op amp are unity-gain stable and suitable for a wide range of general-purpose applications. The small footprints of the GS8331Q1 packages save space on printed circuit boards and enable the design of smaller electronic products. Power Supply Bypassing and Board Layout GS8331Q1 operates from a single 1.8V to 5.5V supply or dual ±0.9V to ±2.75V supplies. For best performance, a 0.1μF ceramic capacitor should be placed close to the VDD pin in single supply operation. For dual supply operation, both VDD and VSS supplies should be bypassed to ground with separate 0.1μF ceramic capacitors. Low Supply Current The low supply current (typical 25μA per channel) of GS8331Q1 will help to maximize battery life. They are ideal for battery powered systems. Operating Voltage GS8331Q1 operate under wide input supply voltage (1.8V to 5.5V). In addition, all temperature specifications apply from -45 oC to +125 oC. Most behavior remains unchanged throughout the full operating voltage range. These guarantees ensure operation throughout the single Li-Ion battery lifetime. Rail-to-Rail Input The input common-mode range of GS8331Q1 extends 100mV beyond the supply rails (VSS-0.1V to VDD+0.1V). This is achieved by using complementary input stage. For normal operation, inputs should be limited to this range. Rail-to-Rail Output Rail-to-Rail output swing provides maximum possible dynamic range at the output. This is particularly important when operating in low supply voltages. The output voltage of GS8331Q1 can typically swing to less than 5mV from supply rail in light resistive loads (>100kΩ), and 100mV of supply rail in moderate resistive loads (10kΩ). Capacitive Load Tolerance The GS8331Q1 is optimized for bandwidth and speed, not for driving capacitive loads. Output capacitance will create apole in the amplifier’s feedback path, leading to excessive peaking and potential oscillation. If dealing with load capacitance is a requirement of the application, the two strategies to consider are (1) using a small resistor in series with the amplifier’s output and the load capacitance and (2) reducing the bandwidth of the amplifier’s feedback loop by increasing the overall noise gain. Figure 2. shows a unity gain follower using the series resistor strategy. The resistor isolates the output from the capacitance and, more importantly, creates a zero in the feedback path that compensates for the pole created by the output capacitance. Figure 2. Indirectly Driving a Capacitive Load Using Isolation Resistor November 2022-REV_V0 6/10 GS8331Q1 The bigger the RISO resistor value, the more stable VOUT will be. However, if there is a resistive load RL in parallel with the capacitive load, a voltage divider (proportional to RISO/RL) is formed, this will result in a gain error. The circuit in Figure 3 is an improvement to the one in Figure 2. RF provides the DC accuracy by feed-forward the VIN to RL. CF and RISO serve to counteract the loss of phase margin by feeding the high frequency component of the output signal back to the amplifier’s inverting input, thereby preserving the phase margin in the overall feedback loop. Capacitive drive can be increased by increasing the value of CF. This in turn will slow down the pulse response. Figure 3. Indirectly Driving a Capacitive Load with DC Accuracy November 2022-REV_V0 7/10 GS8331Q1 Typical Application Circuits Differential amplifier The differential amplifier allows the subtraction of two input voltages or cancellation of a signal common the two inputs. It is useful as a computational amplifier in making a differential to single-end conversion or in rejecting a common mode signal. Figure 4. shown the differential amplifier using GS8331Q1. Figure 4. Differential Amplifier VOUT ( RR13RR24 ) RR14 VIN  RR12 VIP ( RR13RR24 ) RR13 VREF If the resistor ratios are equal (i.e. R1=R3 and R2=R4), then VOUT  R2 R1 (VIP  VIN )  VREF Low Pass Active Filter The low pass active filter is shown in Figure 5. The DC gain is defined by –R2/R1. The filter has a -20dB/decade roll-off after its corner frequency ƒC=1/(2πR3C1). Figure 5. Low Pass Active Filter November 2022-REV_V0 8/10 GS8331Q1 Instrumentation Amplifier The triple GS8331Q1 can be used to build a three-op-amp instrumentation amplifier as shown in Figure 6. The amplifier in Figure 6 is a high input impedance differential amplifier with gain of R2/R1. The two differential voltage followers assure the high input impedance of the amplifier. Figure 6. Instrument Amplifier . November 2022-REV_V0 9/10 GS8331Q1 Package Information SOT23-5 November 2022-REV_V0 10/10