BAV99
Dual series switching diode
FEATURES
Fast switching speed Max:4ns.
High conductance.
Connected in series.
Surface mount package ideally suited
SOT-23
to
r
for automatic insertion.
MSL1.
APPLICATIONS
High-speed switching in thick and thin-film circuits.
Marking
A7
mi
BAV99
Package Code
co
Type No.
nd
ORDERING INFORMATION
uc
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Value
Unit
VR
75
V
IF
215
mA
Peak forward surge current
IFM
500
mA
Peak repetitive reverse voltage
VRRM
75
V
Repetitive peak forward current
IFRM
450
mA
IFSM
2.0
1.0
0.5
A
Power dissipation
Pd
350
mW
Thermal resistance junction to ambient air
RθJA
556
℃/W
Operating and storage temperature range
Tj,TSTG
-65 to +150
℃
Se
Parameter
Reverse voltage
JS
MI
CR
O
Forward current
Peak forward surge current
@t=1.0μs
@t=1.0ms
@t=1.0s
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BAV99
Dual series switching diode
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Typical
Reverse breakdown voltage
V(BR)
Test
conditions
IR=2.5μA
MAX
UNIT
75
Forward voltage
VF
IF=1mA
IF=10mA
IF=50mA
IF=150mA
Diode capacitance
CD
VR=0V
Reverse recovery time
trr
IF=IR=10mA,
Irr=0.1×IR,RL=100Ω
uc
IR
VR=20V
VR=75V
VR=25V Tj=150℃
VR=75V Tj=150℃
V
25
2.5
30
50
nA
μA
μA
μA
715
855
1000
1250
mV
nd
f=1MHz
2.0
pF
4.0
nS
co
Reverse voltage leakage current
MIN
to
r
Parameter
JS
MI
CR
O
Se
mi
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
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BAV99
Dual series switching diode
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
SOT-23
A
Min
Max
A
2.70
3.10
B
1.10
1.50
0.9
1.1
0.3
0.5
0.35
0.48
G
1.80
2.00
H
0.02
0.1
J
0.05
0.15
K
2.20
2.60
E
K
B
C
D
uc
E
J
D
nd
G
co
H
CR
O
0.95
Se
SOLDERING FOOTPRINT
0.95
All Dimensions in mm
mi
C
to
r
Dim
JS
MI
2.00
0.90
0.80
Unit : mm
PACKAGE INFORMATION
Device
Package
Shipping
BAV99
SOT-23
3000/Tape&Reel
www.jsmsemi.com
第3页,共3页
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- 1+0.15070
- 200+0.02194
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