DMS8515E

DMS8515E Provisional Datasheet 850V N-Channel Depletion-Mode Power MOSFET General Features ➢ ➢ ➢ ➢ ➢ ➢ ➢ ➢ Depletion Mode (Normally On) ESD Improved Capability Fast Switching Speed High Breakdown Voltage: 850V Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure RoHS Compliant Halogen-free Available BVDSX RDS(ON)(Typ.) IDSS(Min.) 850V 15Ω 200mA SOT-223 D D Applications ➢ ➢ ➢ ➢ ➢ ➢ Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads G G S S Ordering Information Part Number Package Marking Remark DMS8515E SOT-223 8515 Halogen Free Absolute Maximum Ratings Symbol TA=25℃ unless otherwise specified Parameter DMS8515E Unit V VDSX Drain-to-Source Voltage [1] 850 ID Continuous Drain Current 0.2 IDM Pulsed Drain Current [2] 0.8 PD Power Dissipation 1.5 W VGS Gate-to-Source Voltage ±20 V TL Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 TJ & TSTG Operating and Storage Temperature Range A ℃ -55 to 150 Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case ARK Microelectronics Co., Ltd. www.ark-micro.com 1 / 7 DMS8515E Unit 83 ℃/W Rev. 0.1 Oct. 2023 DMS8515E Provisional Datasheet Electrical Characteristics OFF Characteristics Symbol TA=25℃ unless otherwise specified Parameter BVDSX Drain-to-Source Breakdown Voltage ID(OFF) Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current Min. Typ. Max. Unit Test Conditions 850 -- -- V VGS=-10V, ID=250µA -- -- 10 µA VDS=850V, VGS=-10V -- -- 20 -- -- -20 ON Characteristics Symbol IDSS Parameter Saturated Drain-to-Source Current Static Drain-to-Source On-Resistance VGS(OFF) Gate-to-Source Cut-off Voltage Forward Transconductance Parameter Typ. Max. Unit Test Conditions 200 -- -- mA VGS=0V, VDS=50V -- 15 30 Ω VGS=0V, ID=200mA [3] -4.0 -- -1.5 V VDS=3V, ID=8µA -- 720 -- mS VDS=20V, ID=200mA Essentially independent of operating temperature Min. Typ. Max. Ciss Input Capacitance -- 393.4 -- Coss Output Capacitance -- 20.7 -- Crss Reverse Transfer Capacitance -- 4.1 -- Qg Total Gate Charge -- 13.6 -- Qgs Gate-to-Source Charge -- 4.0 -- Qgd Gate-to-Drain (Miller) Charge -- 3.6 -- Resistive Switching Characteristics Symbol Parameter Min. Typ. Max. Turn-on Delay Time -- 18.1 -- trise Rise Time -- 10.5 -- Turn-off Delay Time -- 35.6 -- Fall Time -- 94.0 -- tfall ARK Microelectronics Co., Ltd. Unit Test Conditions pF VGS=-10V VDS=50V f=1.0MHz nC VGS=-10V~10V VDS=150V ID=200mA Essentially independent of operating temperature td(on) td(off) VGS=-20V, VDS=0V Min. Dynamic Characteristics Symbol VGS=20V, VDS=0V TA=25℃ unless otherwise specified RDS(ON) gfs µA www.ark-micro.com 2 / 7 Unit Test Conditions ns VGS=-10V~0V VDD=150V ID=200mA RG=10Ω Rev. 0.1 Oct. 2023 DMS8515E Provisional Datasheet Source-Drain Diode Characteristics Symbol VSD Parameter Diode Forward Voltage TA=25℃ unless otherwise specified Min. Typ. Max. Unit Test Conditions -- -- 1.2 V ISD=200mA, VGS=-10V NOTE： [1] TJ=+25℃ to +150℃. [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] Pulse width≤380µs, duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 3 / 7 Rev. 0.1 Oct. 2023 DMS8515E Provisional Datasheet Typical Characteristics Figure 1. Maximum Power Dissipation vs. Case Temperature Figure 2. Maximum Continuous Drain Current vs. Case Temperature 0.25 ID, Drain-to-Source Current(A) PD, Power Dissipation(W) 1.5 1.2 0.9 0.6 0.3 0 0.2 0.15 0.1 0.05 0 25 50 75 100 125 150 25 TC, Case Temperature(℃) Figure 3. Typical Output Characteristics 100 125 150 2000 VGS=0V 800 ID, Drain-to-Source Current(mA) ID, Drain-to-Source Current(mA) 75 Figure 4. Typical Transfer Characteristics 900 700 600 VGS=-0.2V 500 400 VGS=-0.4V 300 VGS=-0.6V 200 100 VGS=-1V 0 1600 VDS=50V VGS(OFF)=-3V 1200 VGS(OFF)=-1.9V 800 400 0 0 5 10 15 20 25 -4 VDS, Drain-to-Source Voltage(V) -3 -2 -1 0 1 VGS, Gate-to-Source Voltage(V) Figure 5. Typical Transfer Characteristics Figure 6. Typical Capacitance vs. Drainto-Source Voltage 700 VDS=50V TJ=25℃ 1000 600 100 C, Capacitance(pF) ID, Drain-to-Source Current(mA) 50 TC, Case Temperature(℃) 10 VGS(OFF)=-3V 1 VGS(OFF)=-1.9V 0.1 500 Ciss 400 300 Coss 200 Crss 100 0.01 0 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5 0 VGS, Gate-to-Source Voltage(V) ARK Microelectronics Co., Ltd. 10 20 30 40 50 VDS, Drain-to-Source Voltage(V) www.ark-micro.com 4 / 7 Rev. 0.1 Oct. 2023 DMS8515E Provisional Datasheet Figure 7. Typical Gate Charge vs. Gate-to-Source Voltage Figure 8. Normalized On-Resistance vs. Junction Temperature RDS(ON), Drain-to-Source Resistance (Normalized) VGS, Gate-to-Source Voltage(V) 12 ID=200mA VDS=150V 8 4 0 -4 -8 -12 0 3 6 9 12 ID=200mA VGS=0V 2 1.5 1 0.5 0 15 -40 0 40 80 120 160 QG, Gate Charge(nC) TJ, Junction Temperature(℃) Figure 9. Gate-to-Source Cut-off Voltage vs. Junction Temperature Figure 10. Drain-to-Source Breakdown Voltage vs. Junction Temperature 1100 ID=8μA VDS=3V -1.9 BVDSX, Drain-to-Source Breakdown Voltage(V) -1.5 VGS(OFF), Gate-to-Source Cut-off Voltage(V) 2.5 ID=250μA VGS=-10V 1050 1000 -2.3 -2.7 -3.1 -3.5 -40 0 40 80 120 160 TJ, Junction Temperature(℃) 950 900 850 800 -40 0 40 80 120 160 TJ, Junction Temperature(℃) Figure 11. Maximum Forward Safe Operating Area ID, Drain-to-Source Current(mA) 1000 100 10 1 1 10 100 1000 VDS, Drain-to-Source Voltage(V) ARK Microelectronics Co., Ltd. www.ark-micro.com 5 / 7 Rev. 0.1 Oct. 2023 DMS8515E Provisional Datasheet Package Dimensions SOT-223 6.6±0.2 10°MAX 0.9 MIN 3.5±0.2 1 2 7±0.2 3 2.3±0.05 0.305±0.05 4.6 REF 0.9±0.1 1.6±0.1 0.06±0.04 6.6±0.2 ARK Microelectronics Co., Ltd. www.ark-micro.com 6 / 7 Rev. 0.1 Oct. 2023 DMS8515E Provisional Datasheet Published by ARK Microelectronics Co., Ltd. ADD: D26, UESTC National Science Park No. 1 Shuangxing Avenue, Chengdu, Sichuan.All All Rights Reserved. Disclaimers ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. 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As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructions for used provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 7 / 7 Rev. 0.1 Oct. 2023