DMS8550E

DMS8550E Provisional Datasheet 850V N-Channel Depletion-Mode Power MOSFET General Features ➢ ➢ ➢ ➢ ➢ ➢ ➢ ➢ Depletion Mode (Normally On) ESD Improved Capability High Breakdown Voltage: 850V Small Package Size: SOT-223 Proprietary Advanced Planar Technology Rugged Polysilicon Gate Cell Structure RoHS Compliant Halogen-free Available BVDSX RDS(ON)(Typ.) IDSS(Min.) 850V 45Ω 30mA SOT-223 D D Applications ➢ ➢ ➢ ➢ ➢ ➢ ➢ Solid State Relays Linear Amplifiers Telecommunications Battery Operated Systems Power Supply Current Regulators Converters G G S S Ordering Information Part Number Package Marking Remark DMS8550E SOT-223 8550 Halogen Free Absolute Maximum Ratings Symbol TA=25℃ unless otherwise specified Parameter DMS8550E Unit V VDSX Drain-to-Source Voltage [1] 850 ID Continuous Drain Current 0.12 IDM Pulsed Drain Current [2] 0.48 PD Power Dissipation 1.5 W VGS Gate-to-Source Voltage ±20 V TL Soldering Temperature Distance of 1.6mm from case for 10 seconds 300 TJ & TSTG Operating and Storage Temperature Range A ℃ -55 to 150 Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case ARK Microelectronics Co., Ltd. www.ark-micro.com 1 / 7 DMS8550E Unit 83 ℃/W Rev. 0.1 Oct. 2023 DMS8550E Provisional Datasheet Electrical Characteristics OFF Characteristics Symbol TA=25℃ unless otherwise specified Parameter BVDSX Drain-to-Source Breakdown Voltage ID(OFF) Drain-to-Source Leakage Current IGSS Gate-to-Source Leakage Current Min. Typ. Max. Unit Test Conditions 850 -- -- V VGS=-10V, ID=250µA -- -- 10 µA VDS=850V, VGS=-10V -- -- 20 -- -- -20 ON Characteristics Symbol µA VGS=20V, VDS=0V VGS=-20V, VDS=0V TA=25℃ unless otherwise specified Min. Typ. Max. Unit Test Conditions Saturated Drain-to-Source Current 30 -- -- mA VGS=0V, VDS=50V RDS(ON) Static Drain-to-Source On-Resistance -- 45 100 Ω VGS=0V, ID=20mA [3] VGS(OFF) Gate-to-Source Cut-off Voltage -4.0 -- -1.2 V VDS=3V, ID=8µA -- 80 -- mS VDS=20V, ID=20mA IDSS gfs Parameter Forward Transconductance Dynamic Characteristics Symbol Parameter Essentially independent of operating temperature Min. Typ. Max. Ciss Input Capacitance -- 114.6 -- Coss Output Capacitance -- 12.3 -- Crss Reverse Transfer Capacitance -- 3.4 -- Qg Total Gate Charge -- 4.5 -- Qgs Gate-to-Source Charge -- 1.5 -- Qgd Gate-to-Drain (Miller) Charge -- 1.3 -- Resistive Switching Characteristics Symbol Parameter Min. Typ. Max. Turn-on Delay Time -- 10.2 -- trise Rise Time -- 10.3 -- Turn-off Delay Time -- 33.5 -- Fall Time -- 130 -- tfall ARK Microelectronics Co., Ltd. Test Conditions pF VGS=-10V VDS=50V f=1.0MHz nC VGS=-10V~10V VDS=50V ID=50mA Essentially independent of operating temperature td(on) td(off) Unit www.ark-micro.com 2 / 7 Unit Test Conditions ns VGS=-10V~0V VDD=50V ID=50mA RG=10Ω Rev. 0.1 Oct. 2023 DMS8550E Provisional Datasheet Source-Drain Diode Characteristics Symbol VSD Parameter Diode Forward Voltage TA=25℃ unless otherwise specified Min. Typ. Max. Unit Test Conditions -- -- 1.2 V ISD=20mA, VGS=-10V NOTE： [1] TJ=+25℃ to +150℃. [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] Pulse width≤380µs, duty cycle≤2%. ARK Microelectronics Co., Ltd. www.ark-micro.com 3 / 7 Rev. 0.1 Oct. 2023 DMS8550E Provisional Datasheet Typical Characteristics Figure 1. Maximum Power Dissipation vs. Case Temperature Figure 2. Maximum Continuous Drain Current vs. Case Temperature 0.15 ID, Drain-to-Source Current(A) PD, Power Dissipation(W) 1.5 1.2 0.9 0.6 0.3 0 0.09 0.06 0.03 0 25 50 75 100 125 TC, Case Temperature(℃) 150 25 Figure 3. Typical Output Characteristics 75 100 125 150 Figure 4. Typical Transfer Characteristics ID, Drain-to-Source Current(mA) VGS=0V 60 50 40 VGS=-0.2V 30 20 VGS=-0.4V 10 VGS=-0.6V 0 350 VDS=25V 300 250 VGS(OFF)=-1.4V 200 VGS(OFF)=-2.6V 150 100 50 0 0 2 4 6 8 10 -4 VDS, Drain Voltage(V) -3 -2 -1 0 1 VGS, Gate-to-Source Voltage(V) Figure 5. Typical Transfer Characteristics Figure 6. Typical Capacitance vs.Drainto-Source Voltage 1000 200 VDS=25V TJ=25℃ 100 C, Capacitance(pF) ID, Drain-to-Source Current(mA) 50 TC, Case Temperature(℃) 400 70 ID, Drain Current(mA) 0.12 10 VGS(OFF)=-2.6V 1 VGS(OFF)=-1.4V 0.1 160 Ciss 120 80 Coss Crss 40 0.01 0 -3 -2.5 -2 -1.5 -1 -0.5 0 0 VGS, Gate-to-Source Voltage(V) ARK Microelectronics Co., Ltd. 10 20 30 40 50 VDS, Drain-to-Source Voltage(V) www.ark-micro.com 4 / 7 Rev. 0.1 Oct. 2023 DMS8550E Provisional Datasheet VGS, Gate-to-Source Voltage(V) 12 ID=50mA VDS=50V 8 4 0 -4 -8 -12 0 Figure 8. Normalized On-Resistance vs. Junction Temperature RDS(ON), Drain-to-Source Resistance (Normalized) Figure 7. Typical Gate Charge vs.Gateto-Source Voltage 1 2 3 4 2.5 ID=20mA VGS=0V 2 1.5 1 0.5 0 5 -40 QG, Gate Charge(nC) -1 ID=8μA VDS=3V -1.3 -1.6 -1.9 -2.2 -2.5 -40 0 40 80 120 TJ, Junction Temperature(℃) 40 80 120 160 Figure 10. Drain-to-Source Breakdown Voltage vs. Junction Temperature BVDSX, Drain-to-Source Breakdown Voltage(V) VGS(OFF), Gate-to-Source Cut-off Voltage(V) Figure 9. Gate-to-Source Cut-off Voltage vs. Junction Temperature 0 TJ, Junction Temperature(℃) 1050 ID=250μA VGS=-10V 1000 950 900 850 800 -40 160 0 40 80 120 160 TJ, Junction Temperature(℃) ID, Drain-to-Source Current(mA) Figure 11. Maximum Forward Safe Operating Area 1000 100 10 1 1 10 100 1000 VDS, Drain-to-Source Voltage(V) ARK Microelectronics Co., Ltd. www.ark-micro.com 5 / 7 Rev. 0.1 Oct. 2023 DMS8550E Provisional Datasheet Package Dimensions SOT-223 6.6±0.2 10°MAX 0.9 MIN 3.5±0.2 1 2 7±0.2 3 2.3±0.05 0.305±0.05 4.6 REF 0.9±0.1 1.6±0.1 0.06±0.04 6.6±0.2 ARK Microelectronics Co., Ltd. www.ark-micro.com 6 / 7 Rev. 0.1 Oct. 2023 DMS8550E Provisional Datasheet Published by ARK Microelectronics Co., Ltd. ADD: D26, UESTC National Science Park No. 1 Shuangxing Avenue, Chengdu, Sichuan.All All Rights Reserved. Disclaimers ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to ARK Microelectronics Co., Ltd’s terms and conditions supplied at the time of order acknowledgement. ARK Microelectronics Co., Ltd. warrants performance of its hardware products to the specifications at the time of sale, Testing, reliability and quality control are used to the extent ARK Microelectronics Co., Ltd deems necessary to support this warrantee. Except where agreed upon by contractual agreement, testing of all parameters of each product is not necessary performed. ARK Microelectronics Co., Ltd. does not assume any liability arising from the use of any product or circuit designs described herein. Customers are responsible for their products and applications using ARK Microelectronics Co., Ltd’s components. To minimize risk, customers must provide adequate design and operating safeguards. ARK Microelectronics Co., Ltd. does not warrant or convey any license either expressed or implied under its patent rights, nor the rights of others. Reproduction of information in ARK Microelectronics Co., Ltd’s data sheets or data books is permissible only if reproduction is without modification or alteration. Reproduction of this information with any alteration is an unfair and deceptive business practice. ARK Microelectronics Co., Ltd is not responsible or liable for such altered documentation. Resale of ARK Microelectronics Co., Ltd’s products with statements different from or beyond the parameters stated by ARK Microelectronics Co., Ltd. for the product or service voids all express or implied warrantees for the associated ARK Microelectronics Co., Ltd’s product or service and is unfair and deceptive business practice. ARK Microelectronics Co., Ltd is not responsible or liable for any such statements. Life Support Policy: ARK Microelectronics Co., Ltd’s products are not authorized for use as critical components in life devices or systems without the expressed written approval of ARK Microelectronics Co., Ltd. As used herein: 1. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructions for used provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ARK Microelectronics Co., Ltd. www.ark-micro.com 7 / 7 Rev. 0.1 Oct. 2023