HSL3P20

HSL3P20 P-Ch 200V Fast Switching MOSFETs Description Product Summary The HSL3P20 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSL3P20 meets the RoHS and Green Product requirement with full function reliability approved. VDS -200 V RDS(ON),Max 2.4 Ω ID -3 A     SOT223 Pin Configuration Super Low Gate Charge Excellent Cdv/dt effect decline Green Device Available Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -200 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V -3 A ID@TC=70℃ Continuous Drain Current, VGS @ -10V -2 A ID@TA=25℃ Continuous Drain Current, VGS @ -10V -0.9 A ID@TA=70℃ Continuous Drain Current, VGS @ -10V -0.68 A IDM Pulsed Drain Current -3.5 A PD@TA=25℃ Total Power Dissipation 1.5 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ 1 1 1 1 2 3 Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case www.hs-semi.cn 1 Ver 2.0 1 Max. Unit --- 85 ℃/W --- 36 ℃/W 1 HSL3P20 P-Ch 200V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage Conditions 2 Min. Typ. Max. Unit VGS=0V , ID=-250uA -200 --- --- V VGS=-10V , ID=-0.5A --- 1.9 2.4  VGS=VDS , ID =-250uA -4.0 V -2.0 -3.0 VDS=-160V , VGS=0V , TJ=25℃ --- --- 1 VDS=-160V , VGS=0V , TJ=55℃ --- --- 10 VGS=±20V , VDS=0V --- --- ±100 nA --- 0.5 --- S --- 8.5 --- --- 1.5 --- IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gfs Forward Transconductance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 1.8 --- Turn-On Delay Time --- 1.9 --- Td(on) Tr Td(off) Tf VDS=-5V , ID=-0.8A VDS=-100V , VGS=-4.5V , ID=-0.5A Rise Time VDD=-100V , VGS=-10V , RG=6 --- 1.2 --- Turn-Off Delay Time ID=-0.5A --- 22 --- uA nC ns Fall Time --- 11 --- Ciss Input Capacitance --- 500 --- Coss Output Capacitance --- 39 --- Crss Reverse Transfer Capacitance --- 20 --- Min. Typ. Max. Unit --- --- -1.2 A --- --- -3.5 A --- --- -1.3 V VDS=-100V , VGS=0V , f=1MHz pF Diode Characteristics Symbol Parameter IS Continuous Source Current1,4 ISM Pulsed Source Current2,4 VSD Diode Forward Voltage 2 Conditions VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSL3P20 P-Ch 200V Fast Switching MOSFETs Typical Characteristics www.hs-semi.cn Ver 2.0 3 HSL3P20 P-Ch 200V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 4 HSL3P20 P-Ch 200V Fast Switching MOSFETs www.hs-semi.cn Ver 2.0 5