FDT3612(UMW)

UMW R FDT3612 100V N-Channel MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/ DC converters using either synchronous or conventional switching PWM controllers. D These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/ DC power supply designs with higher overall efficiency. G D Features Applications • VDS (V) = 100V • DC/DC converter • ID = 3.7A (VGS = 10V) • Motor driving S • R DS(ON)＜120mΩ(VGS =10V) • R DS(ON)＜ 130mΩ(VGS =6V) • Fast switching speed • Low gate charge (14nC typ) • High performance trench technology for extremely low RDS(ON) • High power and current handling capability in a widely used surface mount package Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V ID Drain Current 3.7 A – Continuous (Note 1a) – Pulsed PD TJ, TSTG Maximum Power Dissipation 20 (Note 1a) 3.0 (Note 1b) 1.3 (Note 1c) 1.1 W –55 to +150 °C (Note 1a) 42 °C/W (Note 1) 12 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case www.umw-ic.com 1 UTD Semiconductor Co.,Limited UMW R FDT3612 100V N-Channel MOSFET Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Test Conditions Min Typ Single Pulse, VDD = 50 V, ID= 3.7 A Max Units W DSS Drain-Source Avalanche Energy IAR BV DSS ∆BVDSS ∆TJ IDSS Drain-Source Avalanche Current Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V 10 IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C 4 V VGS = 0 V, ID = 250 µA 90 mJ 3.7 A V 100 ID = 250 µA, Referenced to 25°C 106 2 2.5 mV/°C –6 mV/°C VGS = 10 V, ID = 3.7 A 88 120 VGS = 6 V, ID = 3.5 A 94 130 ID(on) On–State Drain Current VGS = 10 V, VDS = 10 V gFS Ciss Forward Transconductance Input Capacitance VDS = 10 V, ID = 3.7 A Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) VDS = 50 V, f = 1.0 MHz V GS = 0 V, VDD = 50 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω µA mΩ 10 A 11 632 S pF 40 pF 20 pF 8.5 17 ns 2 4 ns Turn–Off Delay Time 23 37 ns tf Turn–Off Fall Time 4.5 9 ns Qg Total Gate Charge 14 20 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VDS = 50 V, VGS = 10 V ID = 3.7 A, 2.4 nC 3.8 VGS = 0 V, IS = 2.5 A (Note 2) 0.75 nC 2.5 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 42°C/W when mounted on a 1in2 pad of 2 oz copper www.umw-ic.com b) 95°C/W when mounted on a .0066 2 in pad of 2 oz copper 2 c) 110°C/W when mounted on a minimum pad. UTD Semiconductor Co.,Limited UMW R FDT3612 100V N-Channel MOSFET Typical Characteristics 1.8 5.0V ID, DRAIN CURRENT (A) VGS = 10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 4.5V 16 12 4.0V 8 4 3.5V 1.6 VGS = 4.0V 1.4 4.5V 5.0V 6.0V 1.2 0.8 0 0 2 4 6 0 8 4 8 12 16 20 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 2.2 ID = 3.7A VGS = 10V 2 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10V 1 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 ID = 1.9 A 0.3 TA = 125oC 0.2 TA = 25oC 0.1 0 150 3 4 5 6 7 8 9 10 o TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 20 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 10V 16 12 8 TA = 125oC 25oC 4 -55oC VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 2 2.5 3 3.5 4 4.5 0 5 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. www.umw-ic.com 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 UTD Semiconductor Co.,Limited UMW R FDT3612 100V N-Channel MOSFET Typical Characteristics 800 ID = 3.7A CISS 8 60V 80V 6 f = 1MHz VGS = 0 V 700 VDS = 40V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 4 600 500 400 300 200 CRSS 2 COSS 100 0 0 0 2 4 6 8 10 12 14 0 16 20 40 60 80 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 50 P(pk), PEAK TRANSIENT POWER (W) 40 ID, DRAIN CURRENT (A) 10 100 μs 1 1 ms 10 ms 100 ms 1s 10 s DC THIS AREA IS LIMITED BY rDS(on) 0.1 SINGLE PULSE TJ = MAX RATED 0.01 RθJA = 110 oC/W 30 20 10 0 0.001 TA = 25 oC 0.001 0.1 SINGLE PULSE RθJA = 110°C/W TA = 25°C 1 10 100 0.01 0.1 1 10 100 t1, TIME (sec) 500 VDS, DRAIN to SOURCE VOLTAGE (V) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 110°C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.umw-ic.com 4 UTD Semiconductor Co.,Limited UMW R FDT3612 100V N-Channel MOSFET ■ SOT223 封裝外形圖 www.umw-ic.com 5 UTD Semiconductor Co.,Limited UMW R FDT3612 100V N-Channel MOSFET Marking Ordering information Order code UMW FDT3612 www.umw-ic.com Package Baseqty 2500 SOT-223 6 Deliverymode Tape and reel UTD Semiconductor Co.,Limited