SL04P06

SL04P06 -60V/-4A P-Channel MOSFET Features • High density cell design for ultra low Rdson Product Summary • Fully characterized avalanche voltage and current VDS RDS(ON) MAX • Excellent package for good heat dissipation 140mΩ@10V D2 -60V S1 D1 170mΩ@4.5V Application ID MAX -4A • PWM applications D • Power management • Load switch D D G S SOT-223 top view G D Schematic diagram S Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDS Drain-Source Breakdown Voltage -60 V VGS Gate-Source Voltage ±20 V TJ Maximum Junction Temperature 150 °C TSTG Storage Temperature Range -55 to 150 °C IS Diode Continuous Forward Current -4 A Tc=25°C Mounted on Large Heat Sink 0 IDM Pulse Drain Current Tested Tc=25°C -13 A ID Continuous Drain Current@GS=10V Tc=25°C -4 A PD Maximum Power Dissipation Tc=25°C 2 W RθJA Thermal Resistance Junction-to-Ambient 62 °C/W www.slkormicro.com 1 Rev.1 -- 13 May 2018 SL04P06 Electrical Characteristics (TJ=25℃ unless otherwise noted) Symbol Parameter Condition Min Typ Max Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) BV(BR)DSS Drain-Source Breakdown Voltage VGS=0V，ID=-250μA -60 -- -- V IDSS Zero Gate Voltage Drain Current VDS=-60V，VGS=0V -- -- -1 uA IGSS Gate-Body Leakage Current VGS=±20V，VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS，ID=-250μA -1.0 -1.8 -2.5 V VGS=-10V，ID=-4A -- 100 140 mΩ RDS(on) Drain-Source On-State Resistance VGS=-4.5V，ID=-4A -- 130 170 mΩ -- 715 -- pF -- 51 -- pF -- 34 -- pF -- 6 -- nC -- 3 -- nC Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VDS=-15V，VGS=0V， f=1MHz Switching Characteristics Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge -- 2 -- nC td(on) Turn-on Delay Time -- 10 -- nS tr Turn-on Rise Time -- 17 -- nS td(off) Turn-Off Delay Time -- 22 -- nS tf Turn-Off Fall Time -- 21 -- nS -- -- -1.2 V VDS=-20V，ID=-2A， VGS=-4.5V VDD=-12V，ID=-1A， VGS=-10V，RG=3.3Ω Source- Drain Diode Characteristics VSD Forward on voltage www.slkormicro.com Tj=25℃，Is=-3A， 2 Rev.1 -- 13 May 2018 SL04P06 Typical Operating Characteristics 10V -10 6V -10V -10 VGS, Gate-Source Voltage (V) ID, Drain-Source Current (A) -12 -7V -5V -8 -4.5V -6 -4 VGS=-3V -2 -8 -6 -4 -2 0 0 0 -1 -2 -3 0 -4 4 6 8 10 Qg -Total Gate Charge (nC) Fig2. Typical Gate Charge Vs.Gate-Source Voltage VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics 160 Normalized On Resistance 2 VGS=-4.5V 140 On Resistance(mΩ ) 2 120 VGS=-10V 100 1.8 VGS=-10V 1.6 1.4 1.2 1 0.8 80 0 -2 -4 -6 -8 0 -10 ID, Drain-Source Current (A) Fig3. Drain-Source on Resistance 25 50 75 100 125 150 Tj - Junction Temperature (°C) Fig4. Normalized On-Resistance Vs. Temperature 1200 100 Limit by RDS(ON) Capacitance (pF) ID - Drain Current (A) 900 10 100us 1 10s 10ms Ciss 600 300 0.1s Coss DC Crss 0 0.1 0.1 1 10 0 100 -VDS, Drain -Source Voltage (V) Fig5. Maximum Safe Operating Area www.slkormicro.com 4 8 12 16 20 -VDS , Drain-Source Voltage (V) Fig6 Typical Capacitance Vs.Drain-Source Voltage 3 Rev.1 -- 13 May 2018 SL04P06 SOT-223Package information Symbol A A1 A2 b1 b2 c D E E1 e e1 L L1 θ www.slkormicro.com Dimensions in Millimeters(mm) Min Max 0.700 0.900 0.000 0.100 0.700 0.800 0.150 0.250 0.250 0.350 0.100 0.200 1.500 1.700 0.700 0.900 1.450 1.750 0.500TYP 0.900 1.100 0.400REF 0.260 0.460 0° 8° 4 Dimensions In Inches Min Max 0.028 0.035 0.000 0.004 0.028 0.031 0.006 0.010 0.010 0.014 0.004 0.008 0.059 0.067 0.028 0.035 0.057 0.069 0.020TYP 0.035 0.043 0.016REF 0.010 0.018 0° 8° Rev.1 -- 13 May 2018