1N65G

HXY 1N65G ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Description The 1N65G uses advanced trench technology to provide excellent RDS(ON), low gate charge and D operation with gate voltages as low as 4.5V. This D G device is suitable for use as a Battery protection or in other Switching application. S SOT-223 General Features VDS = 650V ID =1A RDS(ON) < 12Ω @ VGS=10V PIN2 D ! Application " Battery protection PIN1 G ! Load switch ! " " " ! PIN3 S Uninterruptible power supply N-Channel MOSFET Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) 1N65G SOT-223 1N65 XXXX 4000 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 1 A IDM Pulsed Drain Current2 4.8 A PD@TA=25℃ Total Power Dissipation4 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient (Steady State)1 62.5 ℃/W Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY 1N65G ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient Conditions Min. Typ. Max. Unit 650 --- --- V Reference to 25℃ , ID=1mA --- 0.057 --- V/℃ VGS=10V , ID=0.6A --- 9.5 12 Ω 2 --- 4 V ----- -5.68 --- --1 mV/℃ VDS=650V , VGS=0V , TJ=25℃ VDS=650V , VGS=0V , TJ=55℃ --- --- 5 VGS=±30V , V DS=0V --- --- ±100 uA nA VGS=0V , ID=250uA VGS=VDS , ID =250uA IDSS IGSS Drain-Source Leakage Current Gate-Source Leakage Current gfs Forward Transconductance VDS=5V , ID=0.5A --- 35 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 --- Ω Qg Total Gate Charge (4.5V) --- 4 --- Qgs Gate-Source Charge --- 0.9 --- Qgd Gate-Drain Charge --- 2.5 --- Td(on) Turn-On Delay Time --- 4 --- --- 24 --- --- 6 --- --- 24 --- --- 119 --- --- 19 --- --- 2 --- --- --- 1 A --- --- 4.8 A --- --- 1.4 V --- 160 --- nS --- 0.3 --- nC Tr Td(off) Tf Rise Time Turn-Off Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance IS ISM VSD Continuous Source Current1,5 Pulsed Source Current2,5 Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge VDS=520V , VGS=10V , ID=1A VDD=325V , VGS=10V , RG=50 Ω , ID=1A VDS=15V , VGS=0V , f=1MHz VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=15A , TJ=25℃ dI/dt=100A/µs , nC ns pF Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=28A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY 1N65G ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Typical Characteristics Shenzhen HuaXuanYang Electronics CO.,LTD www.hxymos.com HXY 1N65G ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG SOT-223 Package Outline Dimensions Symbol A A1 A2 b b1 c D E E1 e L θ Dimensions In Millimeters Min. Max. —— 1.800 0.020 0.100 1.500 1.700 0.660 0.840 2.900 3.100 0.230 0.350 6.300 6.700 6.700 7.300 3.300 3.700 2.300(BSC) 0.750 —— 0° 10° Shenzhen HuaXuanYang Electronics CO.,LTD Dimensions In Inches Min. Max. —— 0.071 0.001 0.004 0.059 0.067 0.026 0.033 0.114 0.122 0.009 0.014 0.248 0.264 0.264 0.287 0.130 0.146 0.091(BSC) 0.030 —— 0° 10° www.hxymos.com HXY 1N65G ELECTRONICS CO.,LTD N-Channel Enhancement Mode MOSFET HUAXUANYANG Attention ■ Any and all HUA XUAN YANG ELECTRONICS products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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