BUK9840-55A-VB

BUK9840-55A www.VBsemi.com N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A) 0.029 at VGS = 10 V 7.0 0.033 at VGS = 4.5 V 5.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC D SOT-223 D G G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 °C)a TA = 25 °C TA = 70 °C 7.0 6.1 IDM IAS EAS Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa ID 10 s TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range 3.3 2.3 Steady State 60 ± 20 6.0 5.0 40 15 11 1.7 1.2 - 55 to 175 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical 36 75 17 Maximum 45 90 20 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. 服务热线：400-655-8788 1 BUK9840-55A www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Test Conditions Min. VDS VGS = 0 V, ID = 250 µA 60 VGS(th) VDS = VGS, ID = 250 µA 1 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = 60 V, VGS = 0 V 1 VDS = 60 V, VGS = 0 V, TJ = 55 °C 20 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Diode Forward VDS ≥ 5 V, VGS = 10 V RDS(on) Forward Transconductancea Voltagea Max. Symbol Typ. Unit V 3 nA µA 40 A VGS = 10 V, ID = 6.0 A 0.028 VGS = 10 V, ID = 6.0 A, TJ = 125 °C 0.032 VGS = 10 V, ID = 6.0 A, TJ = 175 °C 0.040 VGS = 4.5 V, ID = 5.1 A 0.033 Ω gfs VDS = 15 V, ID = 6.0 A 25 VSD IS = 1.7 A, VGS = 0 V 0.8 1.2 18 27 VDS = 30 V, VGS = 10 V, ID = 6.0 A 3.4 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VGS = 0.1 V, f = 5 MHz Rg Gate Resistance 0.5 td(on) Turn-On Delay Time VDD = 30 V, RL = 30 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 5.3 IF = 1.7 A, dI/dt = 100 A/µs 1.4 2.4 10 20 10 20 25 50 12 24 50 80 Ω ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 40 40 VGS = 10 V thru 5 V 32 ID - Drain Current (A) ID - Drain Current (A) 32 24 4V 16 8 24 16 TC = 150 °C 8 25 °C 3V 0 0.0 - 55 °C 0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) Output Characteristics 2 3.0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics 服务热线：400-655-8788 BUK9840-55A www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1400 0.06 1200 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.06 0.05 VGS = 4.5 V 0.04 VGS = 10 V 0.03 1000 800 600 400 Coss 0.02 200 0.01 0 0 8 16 24 32 Crss 0 40 10 20 40 50 60 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 10 2.2 ID = 6.0 A ID = 6.0 V 2.0 VGS = 10 V 8 VDS = 30 V RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 30 6 4 1.8 1.6 1.4 1.2 1.0 2 0.8 0 0 4 8 16 12 0.6 - 50 20 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 50 0.06 TJ = 175 °C RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.05 TJ = 25 °C 10 0.04 ID = 6.0 A 0.03 0.02 0.01 1 0.00 0.00 0.5 1.0 1.5 2.0 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 2.5 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 服务热线：400-655-8788 3 BUK9840-55A www.VBsemi.com 0.8 50 0.4 40 0.0 30 Power (W) VGS(th) Variance (V) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted ID = 250 µA - 0.4 - 0.8 20 10 - 1.2 - 50 0 - 25 0 25 50 75 100 125 150 175 0.01 0.1 1 TJ - Temperature (°C) 10 100 1000 Time (s) Single Pulse Power Threshold Voltage 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 75 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10 -2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 4 服务热线：400-655-8788 VBJ1638 www.VBsemi.com SOT-223 (HIGH VOLTAGE) B D A 3 0.08 (0.003) B1 C 0.10 (0.004) M C B M A 4 3 H E 0.20 (0.008) M C A M L1 1 2 3 4xL 3xB e θ 0.10 (0.004) M C B M e1 4xC MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 1.55 1.80 0.061 0.071 0.033 B 0.65 0.85 0.026 B1 2.95 3.15 0.116 0.124 C 0.25 0.35 0.010 0.014 D 6.30 6.70 0.248 0.264 E 3.30 3.70 0.130 e 2.30 BSC e1 4.60 BSC 0.181 BSC H 6.71 7.29 0.264 L 0.91 - 0.036 L1 θ 0.061 BSC - 0.146 0.0905 BSC 0.287 0.0024 BSC 10' - 10' ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension do not include mold flash. 4. Outline conforms to JEDEC outline TO-261AA. 服务热线：400-655-8788 5 BUK9840-55A www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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