VBJ2202K

VBJ2202K www.VBsemi.com P-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • -200 RDS(on) () 2.0 VGS = -10 V Qg max. (nC) 29 Qgs (nC) 5.4 Qgd (nC) 15 Configuration Surface mount Available in tape and reel Dynamic dV/dt rating Repetitive avalanche rated P-channel Fast switching Ease of paralleling Available Available Single S SOT-223 D G G D S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage SYMBOL VDS LIMIT -200 Gate-Source Voltage VGS ± 20 VGS at -10 V Continuous Drain Current TC = 25 °C TC = 100 °C Pulsed Drain Current a ID IDM UNIT V -3.0 -2.0 A -10 Linear Derating Factor 0.59 Linear Derating Factor (PCB mount) e 0.025 W/°C Single Pulse Avalanche Energy b EAS 500 mJ Avalanche Current a IAR -6.4 A EAR 7.4 mJ Repetitive Avalanche Energy a Maximum Power Dissipation TC = 25 °C Maximum Power Dissipation (PCB mount) e TA = 25 °C Peak Diode Recovery dV/dt c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak temperature) d for 10 s PD 74 3.0 dV/dt -5.0 TJ, Tstg -55 to +150 300 W V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = -50 V, starting TJ = 25 °C, L = 17 mH, Rg = 25 , IAS = -6.5 A (see fig. 12). c. ISD  -6.5 A, dI/dt  120 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). 1 VBJ2202K www.VBsemi.com THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Maximum Junction-to-Ambient  (PCB mount) a RthJA - 40 Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0, ID = -250 μA -200 - - V VDS/TJ Reference to 25 °C, ID = -1 mA - -0.24 - V/°C VGS(th) VDS = VGS, ID = -250 μA -1.5 - -4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 10 μA Zero Gate Voltage Drain Current IDSS Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Drain-Source On-State Resistance - - - 100 - - -500 ID = -1.0 A b VGS = -10 V μA -  - 2.00 gfs VDS = -50 V, ID = -1.0 A b 2.8 - Input Capacitance Ciss 700 - Coss - 200 - Reverse Transfer Capacitance Crss VGS = 0 V, VDS = -25 V, f = 1.0 MHz, see fig. 5 - Output Capacitance - 40 - - - 29 - - 5.4 15 Forward Transconductance RDS(on) VDS = -200 V, VGS = 0 V VDS = -160 V, VGS = 0 V, TJ = 125 °C - S Dynamic pF Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - - Turn-On Delay Time td(on) - 12 - tr - 27 - - 28 - - 24 - - 4.5 - - 7.5 - 0.6 - 3.7 - - -2 - - -4 - - -6.5 V - 200 300 ns - 1.9 2.9 μC Rise Time Turn-Off Delay Time Fall Time td(off) VGS = -10 V ID = -3.5A, V DS = -160 V, see fig. 6 and 13 b VDD = -100 V, ID = -3.5A, Rg = 12 , RD = 15 , see fig. 10 b tf Internal Drain Inductance LD Internal Source Inductance LS Gate Input Resistance Rg Between lead, 6 mm (0.25") from package and center of die contact nC ns D nH G S f = 1 MHz, open drain  Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current a ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the  integral reverse p - n junction diode A G S TJ = 25 °C, IS = -3.5A, V GS = 0 V b TJ = 25 °C, IF = -3.5A, dI/dt = 100 A/μs b Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. 2 D VBJ2202K www.VBsemi.com VGS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V - ID, Drain Current (A) Top 101 - 4.5 V 100 20 µs Pulse Width TC = 25 °C 10-1 10-1 100 101 - VDS, Drain-to-Source Voltage (V) 91085_01 RDS(on), Drain-to-Source On Resistance (Normalized) TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 ID = - 3.5 A VGS = - 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 TJ, Junction Temperature (°C) 91085_04 Fig. 1 - Typical Output Characteristics, TC = 25 °C 20 40 60 80 100 120 140 160 Fig. 4 - Normalized On-Resistance vs. Temperature 1200 VGS - 15 V - 10 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom - 4.5 V VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Top 100 1000 - 4.5 V Capacitance (pF) - ID, Drain Current (A) 101 800 Ciss 600 400 Coss 200 20 µs Pulse Width TC = 150 °C 10-1 10-1 100 101 100 - VDS, Drain-to-Source Voltage (V) 91085_02 Crss 0 - VDS, Drain-to-Source Voltage (V) 91085_05 Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 150 °C 25 °C 100 20 µs Pulse Width VDS = - 50 V 4 91085_03 5 6 7 8 9 - VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics - VGS, Gate-to-Source Voltage (V) - ID, Drain Current (A) 20 101 101 ID = - 3.5 A VDS = - 160 V 16 VDS = - 100 V VDS = - 40 V 12 8 4 For test circuit see figure 13 0 10 0 91085_06 5 10 15 20 25 30 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage 3 VBJ2202K www.VBsemi.com 6.0 101 150 °C - ID, Drain Current (A) - ISD, Reverse Drain Current (A) 7.0 25 °C 100 5.0 4.0 3.0 2.0 1.0 VGS = 0 V 10-1 0.5 0.0 1.5 2.5 4.5 3.5 25 - VSD, Source-to-Drain Voltage (V) 91085_07 50 125 VDS Operation in this area limited by RDS(on) 5 VGS 2 D.U.T. Rg 102 +VDD 5 10 µs 2 10 - 10 V 100 µs Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 5 1 ms 2 1 Fig. 10a - Switching Time Test Circuit 10 ms TC = 25 °C TJ = 150 °C Single Pulse 5 2 0.1 0.1 2 5 1 2 5 10 2 td(on) 5 102 2 5 td(off) tf tr VGS 103 10 % - VDS, Drain-to-Source Voltage (V) 91085_08 Fig. 8 - Maximum Safe Operating Area 90 % VDS Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 D = 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 0.01 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 10-2 10-5 91085_11 10-4 10-3 10-2 0.1 1 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 150 Fig. 9 - Maximum Drain Current vs. Case Temperature RD 103 - ID, Drain Current (A) 100 TC, Case Temperature (°C) 91085_09 Fig. 7 - Typical Source-Drain Diode Forward Voltage 75 10 VBJ2202K www.VBsemi.com L Vary tp to obtain required IAS VDS QG - 10 V Rg D.U.T. IAS QGD QGS + V DD VG - 10 V 0.01 Ω tp Charge Fig. 13a - Basic Gate Charge Waveform Fig. 12a - Unclamped Inductive Test Circuit Current regulator Same type as D.U.T. IAS 50 kΩ 12 V VDS 0.2 µF 0.3 µF - VDD D.U.T. tp + VDS VGS VDS - 3 mA ID IG Current sampling resistors Fig. 12b - Unclamped Inductive Waveforms Fig. 13b - Gate Charge Test Circuit EAS, Single Pulse Energy (mJ) 1200 ID - 2.9 A - 4.1 A Bottom - 6.5 A Top 1000 800 600 400 200 0 VDD = - 50 V 25 91085_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current 5 VBJ2202K www.VBsemi.com Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + + - - Rg • dV/dt controlled by Rg • ISD controlled by duty factor “D” • D.U.T. - device under test + - VDD Note • Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current Body diode forward drop Ripple ≤ 5 % Note a. VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel   6 VDD I SD VBJ2202K www.VBsemi.com SOT-223 (HIGH VOLTAGE) B D A 3 0.08 (0.003) B1 C 0.10 (0.004) M C B M A 4 3 H E 0.20 (0.008) M C A M L1 1 2 3 4xL 3xB e θ 0.10 (0.004) M C B M e1 4xC MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 1.55 1.80 0.061 0.071 B 0.65 0.85 0.026 0.033 B1 2.95 3.15 0.116 0.124 C 0.25 0.35 0.010 0.014 D 6.30 6.70 0.248 0.264 E 3.30 3.70 0.130 e 2.30 BSC e1 4.60 BSC 0.181 BSC H 6.71 7.29 0.264 L 0.91 - 0.036 L1 θ 0.061 BSC - 0.146 0.0905 BSC 0.287 0.0024 BSC 10' - 10' ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension do not include mold flash. 4. Outline conforms to JEDEC outline TO-261AA. 7 VBJ2202K www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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