AGM60P20R

AGM60P20R ● General Description Product Summary The AGM60P20R combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) BVDSS RDSON ID -60V 65mΩ -10A This device is ideal for load switch and battery protection applications. SOT-223 Pin Configuration ● Features ■ Advance high cell density Trench technology ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching ■ Low Thermal resistance ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity AGM60P20R AGM60P20R SOT223 330mm 12mm 3000 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V） -60 V VGS Gate-Source Voltage (VDS=0V) ±20 V -10 A Drain Current-Continuous(TA=100℃) -6.3 A Drain Current-Continuous@ Current-Pulsed (Note 2) -32 A Maximum Power Dissipation(TA=25℃) 3.0 w 60 mJ -55 To 150 ℃ Typ Max Unit --- 42 ℃/W Drain Current-Continuous(TA=25℃) (Note 1) ID IDM (pluse) PD EAS TJ,TSTG Table 2. Avalanche energy (Note 3) Operating Junction and Storage Temperature Range Thermal Characteristic Symbol RθJA www.agm-mos.com Parameter Thermal Resistance Junction-ambient (Steady State)1 1 VER2.6 AGM60P20R Table 3. Electrical Characteristics (TA=25℃unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250μA -60 -- -- V IDSS Zero Gate Voltage Drain Current VDS=-60V,VGS=0V -- -- -1 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS,ID=-250μA -1.3 -1.8 -2.5 V gFS Forward Transconductance VDS=5V,ID=-5A -- 7.0 -- S RDS(on) Drain-Source On-State Resistance VGS=-10V, ID=-5A -- 65 89 mΩ VGS=-4.5V, ID=-4A -- 95 120 mΩ -- 525 -- pF -- 80 -- pF -- 3.9 -- pF -- 3.5 -- Ω -- 10 -- nS -- 6.0 -- nS -- 40 -- nS Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VDS=-30V,VGS=0V, F=1MHZ f=1.0MHz Switching Times td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time -- 13 -- nS Qg Total Gate Charge -- 8.5 -- nC Qgs Gate-Source Charge -- 1.8 -- nC Qgd Gate-Drain Charge -- 1.5 -- nC -- -- -10 A VGS=-10V,VDS=-30V, ID=-5A,RGEN=3Ω VGS=-10V, VDS=-30V, ID=-5A Source-Drain Diode Characteristics ISD Source-Drain Current(Body Diode) VSD Forward on Voltage VGS=0V,IS=-5A -- -- -1.2 V trr Reverse Recovery Time Isd=-5A , dI/dt=100A/µs , -- 50 -- ns Qrr Reverse Recovery Charge TJ=25℃ -- 105 -- nc Notes 1.The maximum current rating is package limited. Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature Notes 3.EAS condition: TJ=25℃ www.agm-mos.com 2 VER2.6 AGM60P20R Typ. output characteristics -ID =f(-VDS ) Typ. drain-source on resistance RDS(on) =f(-ID ) 200 30 -10V -4.0V 25 -4.5V -5.0V 150 Ron[mohm] -ID[A] 20 -4.5V 15 10 -5.0V 100 -4.0V 5 0 -10V 0 1 2 3 4 50 5 -VDS[V] 20 20 15 15 10 5 0 5 10 -ID[A] 15 20 Typ. forward transconductance gfs =f(-ID ) gfs[S] -ID[A] Typ. transfer characteristics -ID =f(-VGS ) 0 10 5 0 1 2 3 4 0 5 www.agm-mos.com 0 10 20 30 -ID[A] -Vgs[V] 3 VER2.6 AGM60P20R Drain-source on-state resistance RDS(on) =f(T j ); ID =-5.0A; VGS =-10V Typ. capacitances C =f(-VDS ); VGS =0V; f =1MHz 200 1,000 150 C[pF] Ron[mohm] 100 100 10 50 0 -60 -20 20 60 100 1 140 0 10 20 Tj[℃] Typ. gate charge -VGS =f(Qgate ) ; ID =-5A 10 40 50 60 Drain-source breakdown voltage -VBR(DSS) =f(Tj ); ID =-250uA 70 Vd=-30.0V 9 30 -VDS[V] Vd=-60.0V 8 7 65 -VBR(DSS) [V] -Vgs[V] 6 5 4 60 3 2 1 0 55 0 2 4 6 8 Qg[nC] www.agm-mos.com -60 -20 20 60 100 140 Tj[℃] 4 VER2.6 AGM60P20R Power Dissipation Ptot =f(TA ) Safe operating area -ID =f(-VDS ) 100 10us 3.00 10 100us -ID[A] Ptot[W] 4.00 2.00 1ms 1 10ms 1.00 DC 0.00 0 25 50 75 TA[℃] 100 125 0.1 150 0.1 1 -VDS[V] 10 100 Max. transient thermal impedance ZthJC =f(tp ) www.agm-mos.com 5 VER2.6 AGM60P20R Test Circuit and Waveform: Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms www.agm-mos.com 6 VER2.6 AGM60P20R SOT-223 Package Dimensions www.agm-mos.com 7 VER2.6 AGM60P20R Disclaimer: The information provided in this document is believed to be accurate and reliable. however,Shenzhen Core Control Electronics Technology Co., Ltd. does not assume any responsibility for the following consequences.Do not consider the use of such information or use beyond its scope. The information mentioned in this document may be changed at any time without notice. The products and information provided in this document do not infringe patents. Shenzhen Core Control Electronics Technology Co., Ltd. assumes no responsibility for any infringement of any other rights of third parties.The result of using such products and information. This document is the second version issued on February 20, 2023. This document replaces and Replace all previously provided information. It is a registered trademark of Shenzhen Core Control Electronics Technology Co., Ltd. Copyright © 2017 Shenzhen Core Control Electronics Technology Co., Ltd. all rights reserved. www.agm-mos.com 8 VER2.6