FQT3P20TF-VB

FQT3P20TF www.VBsemi.com P-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 200 ID (A) 1.0 at VGS = - 10 V - 2.0 1.1 at VGS = - 6.0 V - 1.8 Qg (Typ.) 8.0 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Ultra Low On-Resistance • Small Size APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies S SOT-223 G D G D S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C)a, b TA = 25 °C TA = 70 °C Steady State - 200 IS Conduction)a, b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa, b L = 1.0 mH TA = 25 °C TA = 70 °C - 2.0 - 1.68 - 1.8 - 1.56 - 5.8 - 0.6 IAS 4.0 1.2 mJ 1.45 0.95 0.8 0.48 TJ, Tstg Operating Junction and Storage Temperature Range A - 1.0 EAS PD Unit V ± 20 IDM Pulsed Drain Current Continuous Source Current (Diode ID 5s - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambienta t5s Steady State RthJA Maximum Junction-to-Foot (Drain) Steady State RthJF Typical 75 120 Maximum 100 166 40 50 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Pulse width limited by maximum junction temperature. 服务热线：400-655-8788 1 FQT3P20TF www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. V(BR)DSS VGS = 0 V, ID = - 250 µA - 200 VGS(th) VDS = VGS, ID = - 250 µA - 2.5 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Limits Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistancea RDS(on) - 4.5 ± 100 VDS = - 200 V, VGS = 0 V -1 VDS = - 200 V, VGS = 0 V, TJ = 55 °C - 10 VDS  - 15 V, VGS = 10 V - 1.0 V nA µA A VGS  - 10 V, ID = - 0.5 A 0.80 1.00 VGS = - 6.0 V, ID = - 0.5 A 0.90 1.10 Forward Transconductancea gfs VDS = - 15 V, ID = - 0.5 A 1.8 Diode Forward Voltage VSD IS = - 1.0 A, VGS = 0 V - 0.85 - 1.2 8.0 12  S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = - 100 V, VGS = 10 V ID  - 0.5 A 1.3 nC 2.5 f = 1.0 MHz 370 VDS = - 25 V, VGS = 0 V, f = 1 MHz  8.0 510 28 pF 16 Switchingc Turn-On Time Turn-Off Time Body Diode Reverse Recovery Charge td(on) tr td(off) VDD = - 100 V, RL = 100  ID  - 1.0 A, VGEN = - 10 V Rg = 6  tf Qrr IF = 0.5 A, dI/dt = 100 A/µs 8 12 11 17 16 25 11 17 140 200 ns nC Notes: a. Pulse test: PW  300 µs duty cycle  2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 FQT3P20TF www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.5 1.0 VGS = 10 thru 5 V 0.8 I D - Drain Current (A) I D - Drain Current (A) 2.0 1.5 1.0 0.6 0.4 TC = 125 °C 4V 0.5 0.2 25 °C - 55 °C 0.0 0.0 0 2 4 6 8 10 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 1.6 5 500 400 1.2 C - Capacitance (pF) R DS(on) - On-Resistance () 1.4 VGS = 6 V 1.0 VGS = 10 V 0.8 0.6 Ciss 300 200 0.4 100 Crss 0.2 Coss 0.0 0.0 0 0.2 0.4 0.6 0.8 1.0 0 60 90 120 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 10 150 2.2 VDS = 10 V ID = 0.5 A 1.9 8 6 4 2 VGS = 10 V ID = 0.5 A 1.6 (Normalized) RDS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 30 1.3 1.0 0.7 0 0 1 2 3 4 5 6 Qg - Total Gate Charge (nC) Gate Charge 服务热线：400-655-8788 7 8 0.4 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 3 FQT3P20TF www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 6 3 ID = 0.5 A TJ = 150 °C 5 RDS(on) - On-Resistance () I S - Source Current (A) 1 TJ = 25 °C 0.1 4 3 2 1 0 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.0 12 ID = 250 µA 10 0.7 8 0.4 Power (W) VGS(th) Variance (V) 4 0.1 6 4 TA = 25 °C - 0.2 2 - 0.5 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 600 10 IDM Limited I D - Drain Current (A) 1 10 µs 100 µs Limited by RDS(on)* 1 ms 0.1 10 ms 100 ms 0.01 TA = 25 °C Single Pulse 10 s, 1 s DC, 100 s BVDSS Limited 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 服务热线：400-655-8788 4 1 3 P SB www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 120 °C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 服务热线：400-655-8788 5 FQT3P20TF www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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