BSP315P(UMW)

UMW R BSP315 -60V P-Channel MOSFET Description • P-Channel • D 4 Enhancement mode • Avalanche rated 3 • Logic Level 2 1 • dv/dt rated S D G Features VDS (V) = -60V ID = -1.17A (VGS = -10V) RDS(ON) < 60mΩ (VGS = -10V) RDS(ON) < 95mΩ (VGS = -4.5V) Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value A ID T A = 25 °C -1.17 T A = 70 °C -0.94 Pulsed drain current Unit ID puls -4.68 T A = 25 °C Avalanche energy, single pulse EAS 24 mJ EAR 0.18 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 1.8 W I D = -1.17 A , V DD = -25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt kV/µs I S = -1.17 A, V DS = -48 V, di/dt = 200 A/µs, T jmax = 150 °C T A = 25 °C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 °C 55/150/56 ESD Class; JESD22-A114-HBM www.umw-ic.com -55...+150 Class 0 1 UTD Semiconductor Co.,Limited UMW R BSP315 -60V P-Channel MOSFET Parameter Symbol Values min. typ. Unit max. Characteristics Thermal resistance, junction - soldering point RthJS 25 K/W (Pin 4) SMD version, device on PCB: RthJA K/W @ min. footprint 115 @ 6 cm 2 cooling area 1) 70 Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS -60 Gate threshold voltage, VGS = VDS I D = -160 µA VGS(th) -1 Zero gate voltage drain current I DSS V VGS = 0 V, I D = -250 µA -1.5 -2 µA VDS = -60 V, V GS = 0 V, T j = 25 °C -0.1 -1 VDS = -60 V, V GS = 0 V, T j = 125 °C -10 -100 -10 -100 nA 60 mΩ Gate-source leakage current IGSS VGS = -20 V, VDS = 0 V RDS(on) Drain-Source on-state resistance VGS = -4.5 V, I D = -0.89 A Drain-Source on-state resistance RDS(on) 95 mΩ VGS = -10 V, I D = -1.17 A Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. www.umw-ic.com 2 UTD Semiconductor Co.,Limited UMW R BSP315 -60V P-Channel MOSFET Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Values Symbol min. typ. 0.7 1.4 Unit max. Dynamic Characteristics Transconductance gfs S VDS≤2*I D*RDS(on)max , ID = -0.89 A Input capacitance Ciss 130 160 Coss 40 50 Crss 17 21 td(on) 24 36 tr 9 14 td(off) 32 48 tf 19 28 pF VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18Ω Rise time VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18Ω Turn-off delay time VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18Ω Fall time VDD = -30 V, V GS = -4.5 V, I D = -0.89 A, RG = 18Ω www.umw-ic.com 3 UTD Semiconductor Co.,Limited UMW R BSP315 -60V P-Channel MOSFET Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values min. Unit typ. max. Qgs 0.7 1.1 Qgd 1.8 2.6 Qg 5.2 7.8 Dynamic Characteristics Gate to source charge nC VDD = -48 V, ID = -1.17 A Gate to drain charge VDD = -48 V, ID = -1.17 A Gate charge total VDD = -48 V, ID = -1.17 A, V GS = 0 to -10 V Gate plateau voltage V(plateau) -3.14 Symbol Values V VDD = -48 V, ID = -1.17 A Parameter min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS -1.17 ISM -4.68 A T A = 25 °C Inverse diode direct current,pulsed T A = 25 °C Inverse diode forward voltage VSD -0.97 -1.3 V trr 30.5 46 ns Qrr 36 54 µC VGS = 0 V, I F = -1.17 A Reverse recovery time VR = -30 V, IF=I S , di F/dt = 100 A/µs Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 100 A/µs www.umw-ic.com 4 UTD Semiconductor Co.,Limited UMW R BSP315 -60V P-Channel MOSFET Power Dissipation Drain current Ptot = f (TA) ID = f(TA) parameter :VGS≥ −10V BSP 315 P BSP 315 P -1.3 1.9 A W -1.1 1.6 -1.0 1.4 1.2 ID Ptot -0.9 -0.8 -0.7 1.0 -0.6 0.8 -0.5 0.6 -0.4 -0.3 0.4 -0.2 0.2 -0.1 0.0 0 20 40 60 80 100 120 °C 0.0 0 160 20 40 60 80 100 120 °C TA TA Safe operating area Transient thermal impedance I D = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , T A = 25 °C parameter : D = tp /T -10 1 160 BSP 315 P 10 2 tp = 280.0µs BSP 315 P K/W D A 10 1 DS ( ID on ) = V -10 0 Z thJC DS /I 1 ms R 10 ms 10 0 D = 0.50 0.20 -10 -1 0.10 0.05 10 -1 single pulse 0.01 DC -10 -2 -1 -10 -10 0 -10 1 V -10 2 VDS www.umw-ic.com 0.02 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 tp 5 UTD Semiconductor Co.,Limited UMW R BSP315 -60V P-Channel MOSFET Typ. output characteristics Typ. drain-source-on-resistance ID = f (VDS) RDS(on) = f (ID) parameter: tp = 80 µs parameter: VGS BSP 315 P -2.8 BSP 315 P 2.6 Ptot = 2W Ω A -2.4 VGS [V] a -2.5 e d -2.2 ID -2.0 -1.8 -1.6 c -1.4 -1.2 -1.0 -0.8 b -3.0 c -3.5 d -4.0 e -4.5 f -5.0 g -5.5 h -6.0 i -6.5 j -7.0 k -8.0 b l -10.0 a b c d 2.2 2.0 RDS(on) li kj g f h 1.8 1.6 1.4 1.2 1.0 0.8 e 0.6 -0.6 0.4 -0.4 a -0.2 0.2 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V 0.0 0.0 -5.0 g i h k j lk j VGS [V] = a b c d e f -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -0.4 -0.8 -1.2 g h i -5.5 -6.0 -6.5 -7.0 -1.6 -2.0 VDS f l -8.0 -10.0 A -2.6 ID Typ. transfer characteristics ID= f ( VGS ) Typ. forward transconductance VDS≥ 2 x ID x RDS(on)max gfs = f(ID); Tj=25°C parameter: tp = 80 µs parameter: gfs 2.5 -3.0 A S ID gfs -2.0 1.5 -1.5 1.0 -1.0 0.5 -0.5 0.0 0.0 -1.0 -2.0 -3.0 -4.0 V -6.0 0.5 1.0 1.5 2.0 A 3.0 ID VGS www.umw-ic.com 0.0 0.0 6 UTD Semiconductor Co.,Limited UMW R BSP315 -60V P-Channel MOSFET Drain-source on-resistance Gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter:ID = -1.17 A, VGS = -10 V parameter: VGS = VDS, ID = -160 µA BSP 315 P 2.1 -3.0 1.8 V Ω V GS(th) RDS(on) 1.6 1.4 98% -2.0 1.2 typ 1.0 98% -1.5 typ -1.0 0.8 2% 0.6 0.4 -0.5 0.2 0.0 -60 -20 20 60 °C 100 0.0 -60 180 -20 20 60 100 Tj 160 °C Tj Typ. capacitances Forward characteristics of reverse diode C = f(VDS) IF = f (VSD ) Parameter: VGS=0 V, f=1 MHz parameter: Tj , tp = 80 µs 10 3 -10 1 pF BSP 315 P A Ciss -10 0 C IF 10 2 Coss Crss 10 1 -10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -5 -10 -15 -20 -25 -30 V -10 -2 0.0 -40 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD VDS www.umw-ic.com -0.4 7 UTD Semiconductor Co.,Limited UMW R BSP315 -60V P-Channel MOSFET Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = -1.17 A , VDD = -25 V RGS = 25 Ω VGS = f (QGate) parameter: ID = -1.17 A pulsed BSP 315 P 25 -16 V mJ VGS E AS -12 15 -10 -8 10 0,2 VDS max -6 0,8 VDS max -4 5 -2 0 25 45 65 85 105 125 0 0.0 165 °C 1.0 2.0 3.0 4.0 5.0 6.0 nC 8.0 QGate Tj Drain-source breakdown voltage V(BR)DSS = f (Tj) -72 V(BR)DSS V -68 -66 -64 -62 -60 -58 -56 -54 -60 -20 20 60 100 °C 180 Tj www.umw-ic.com 8 UTD Semiconductor Co.,Limited UMW R BSP315 -60V P-Channel MOSFET Package Mechanical Data SOT-223 www.umw-ic.com 9 UTD Semiconductor Co.,Limited UMW R BSP315 -60V P-Channel MOSFET Marking Ordering information Order code Package Baseqty Deliverymode UMW BSP315P SOT-223 2500 Tape and reel www.umw-ic.com 10 UTD Semiconductor Co.,Limited