BCP56-16

BCP54,55,56 SOT-223 Transistor(NPN) SOT-223 1. BASE 2. COLLECTOR 1 3. EMITTER Features — For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP51 ... BCP53 (PNP) — — — MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Dimensions in inches and (millimeters) BCP54 BCP55 BCP56 Units VCBO Collector-Base Voltage 45 60 100 V VCEO Collector-Emitter Voltage 45 60 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 1.5 W RθJA Thermal Resistance Junction to Ambient 94 ℃/W Tstg Storage Temperature Range -65to+150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Collector-base breakdown voltage Test conditions V(BR)CBO IC= 0.1mA,IE=0 45 V(BR)CEO IC= 10mA,IB=0 60 V 80 BCP56 V(BR)EBO Base-emitter breakdown voltage V 100 BCP54 BCP55 UNIT 60 BCP56 Collector-emitter breakdown voltage MAX 45 BCP54 BCP55 MIN IC= 10μA,IE=0 5 V ICBO VCB= 30 V, IE=0 hFE(1) VCE= 2V, IC=5mA 25 hFE(2) VCE= 2V, IC=150m A 63 hFE(3) VCE= 2V, IC=500m A 25 VCE(sat) IC=500mA,IB=50mA 0.5 V Base-emitter voltage VBE VCE=2V, IC=500m A 1 V Transition frequency fT Collector cut-off current DC current gain Collector-emitter saturation voltage CLASSIFICATION OF Rank VCE=10V,IC=50mA,f=100MHz 100 nA 250 MHz hFE(2) BCP54-10, BCP55-10, BCP56-10 BCP54-16, BCP55-16, BCP56-16 63-160 100-250 Range Revision:20170701-P1 100 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com BCP54,55,56 SOT-223 Transistor(NPN) Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com BCP54,55,56 SOT-223 Transistor(NPN) Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com