BT134W-600E

BT134W FSSeries 2A 4quadrants TRIACs Product Summary Symbol Value Unit IT(RMS) 2 A VDRM VRRM 600 / 800 V VTM 1.55 V Feature Application With high ability to withstand the shock loading of large current,With high commutation performances, 4 quadrants products especially recommended for use on inductive load. Heating controller; Motor speed controller; Mahjong machine; Blender; Hair straightener; Household appliances like toasters... Package Circuit diagram SOT-223-3L Marking BT134 XXXX www.fuxinsemi.com Page 1 Ver2.1 BT134W FSSeries 2A 4quadrants TRIACs Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Repetitive peak off-state voltage VDRM 600 / 800 V Repetitive peak reverse voltage VRRM 600 / 800 V RMS on-state current IT(RMS) 2 A ITSM 20 A I2t 0.72 A2s dIT/dt 20 A/μs IGM 2 A PG(AV) 0.5 W Junction Temperature TJ -40 ~ +125 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG =2×IGT) Peak gate current Average gate power dissipation Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Gate trigger current Symbol IGT Gate trigger voltage VGT Gate non-trigger voltage VGD latching current IL Holding current IH Critical-rate of rise of commutation voltage dVD/dt Value Test Condition VD=12V, RL=30Ω, Tj=25℃ Ⅰ-Ⅱ-Ⅲ ≤5 IV ≤10 ALL ≤1.3 V ≥0.2 V mA VD =VDRM Tj =125℃ IG=1.2IGT Unit E Ⅰ-Ⅲ ≤5 Ⅱ-IV ≤10 IT=200mA VD=2/3VDRM Gate Open Tj =125℃ mA ≤5 mA ≥15 V/μs STATIC CHARACTERISTICS Forward "on" voltage VTM Repetitive Peak Off-State Current IDRM Repetitive Peak Reverse Current IRRM ITM =1.4A tp=380μs VD =VDRM VR =VRRM MAX. 1.55 V Tj=25℃ MAX. 5 μA Tj=125℃ MAX. 0.5 mA TYP. 31 ℃/W THERMAL RESISTANCES Thermal resistance www.fuxinsemi.com Rth(j-c) Junction to case(AC) Page 2 Ver2.1 BT134W FSSeries 2A 4quadrants TRIACs Typical Characteristics FIG.1: Maximum power dissipation versus RMS on-state current 3 FIG.2: RMS on-state current versus case temperature P(W) IT(RMS)(A) 2.5 2.0 2 1.5 1.0 1 0.5 0 0.0 IT(RMS)(A) 0.5 1.0 1.5 2.0 FIG.3: Surge peak on-state current versus number of cycles ITSM(A) TC(℃) 0.0 -50 0 50 100 150 FIG.4: On-state characteristics (maximum values) 24 10 20 ITM(A) 8 16 Tj=125ºC 6 12 4 8 0 Tj=25ºC 2 4 Number of cycles 1 10 100 VTM(V) 0 0.5 1000 1.0 1.5 2.0 2.5 3.0 FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp