ZXMN6A25GTA(UMW)

UMW R ZXMN6A25 60V N-Channel Product Summary  VDS (V) = 60V  RDS(ON) 50m (V GS = 10V)  RDS(ON) 70m (V GS = 4.5V) Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Equivalent Circuit Applications    DC-DC Converters Power Management Functions Backlighting Features and Benefits      Low Input Capacitance Low On-Resistance Fast Switching Speed Lead-Free Finish; Halogen and Antimony Free. View Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS = 10V Steady State TA = +25°C (Note 6) TA = +70°C (Note 6) TA = +25°C (Note 5) Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (Note 7) Value 60 Units V VGSS ±20 V ID 6.7 5.4 4.8 A 5.7 28.5 A A 28.5 A IS IDM ISM Pulsed Source Current (Note 7) www.umw-ic.com VDSS 1 UTD Semiconductor Co.,Limited UMW R ZXMN6A25 60V N-Channel Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Total Power Dissipation Linear Derating Factor TA = +25°C (Note 5) PD Total Power Dissipation Linear Derating Factor TA = +25°C (Note 6) PD Thermal Resistance, Junction to Ambient Steady state (Note 5) Steady state (Note 6) RθJA Operating and Storage Temperature Range Electrical Characteristics TJ, TSTG Value 2 16 3.9 31 62.5 32 -55 to +150 Symbol Min BVDSS 60 Typ Max Unit V VGS = 0V, ID = 250µA IDSS 1.0 µA VDS = 60V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage IGSS 100 nA VGS = 20V, VDS = 0V V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance (Note 8) Diode Forward Voltage (Note 8) Forward Transconductance (Note 8 & 10) DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance VGS(th) RDS(ON) 1.0  VSD gfs 0.85 10.2 Ciss 1,063 Output Capacitance Coss 104 Reverse Transfer Capacitance Crss Total Gate Charge (VGS = 5.0V) Qg 64 11 20.4 4.1 Qg 50 70 mΩ 0.95 V S VGS = 10V, ID = 3.6A VGS = 4.5V, ID = 3.0A VGS = 0V, IS = 5.5A VDS = 15V, ID = 4.5A VDS = 30V, VGS = 0V f = 1.0MHz nC VDS = 30V, ID = 1.4A, nS VGS = 10V, VDD = 30V, RG = 6.0Ω, ID= 1.0A Gate-Drain Charge Turn-On Delay Time tD(on) Turn-On Rise Time tr 4.0 Turn-Off Delay Time Turn-Off Fall Time tD(off) tf 26.2 10.6 trr Qrr 22 nS 21.4 nC Notes: °C/W °C/W °C pF Qgs Qgd Body Diode Reverse Recovery Charge W mW/°C Test Condition Zero Gate Voltage Drain Current Body Diode Reverse Recovery Time W mW/°C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Total Gate Charge (VGS = 10V) Gate-Source Charge Units 5.1 3.8 IF = 2.2A, dI/dt = 100A/μs 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 6. For a device surface mounted on FR4 PCB measured at t 10 secs. 7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300μs - pulse width limited by maximum junction temperature. 8. Measured under pulsed conditions. Width=300μs. Duty cycle ≤ 2%. 9. Short duration pulse test used to minimize self-heating effect. www.umw-ic.com 2 UTD Semiconductor Co.,Limited UMW R ZXMN6A25 60V N-Channel ADVANCE INFORMATION ADVANCED INFORMATION Typical Characteristics www.umw-ic.com 3 UTD Semiconductor Co.,Limited UMW R ZXMN6A25 60V N-Channel ADVANCE INFORMATION ADVANCED INFORMATION Typical Characteristics (continued) www.umw-ic.com 4 UTD Semiconductor Co.,Limited UMW R ZXMN6A25 60V N-Channel ADVANCE INFORMATION ADVANCED INFORMATION Typical Characteristics (cont.) www.umw-ic.com 5 UTD Semiconductor Co.,Limited UMW R ZXMN6A25 60V N-Channel SOT-223 www.umw-ic.com 6 UTD Semiconductor Co.,Limited UMW R ZXMN6A25 60V N-Channel ZXMN 6A25 YWW Marking Ordering information Order code UMW ZXMN6A25GTA www.umw-ic.com Package Baseqty 2500 SOT-223 7 Deliverymode Tape and reel UTD Semiconductor Co.,Limited