PZT3904

PZT3904 Siliccon NPN bipolar Transistor plications: App z general ampplify z switching application. a Pin assignmen nt PIN NAME E PIN NUMBER FU UNCTION SOT T-223 B C E 1 2 3 Abssolute Maximum Ratiings TA=25℃ ℃ PAR RAMETER Colllector-base breakdown b vooltage Colllector-emitteer breakdownn voltage Emiitter-base breeakdown volttage Colllector currennt Colllector Powerr Dissipation Juncction Temperrature Storrage Temperaature BASE CO OLLECTOR E EMITTER Unless Otherw wise noted SYMBLE E MAXIM MUM VALUE UNIT VCBO VCEO VEBO IC PD Tj Tstg 60 40 6 0.2 0.625 150 -55 ~ +150 ℃ V V V A W ℃ ℃ VICE MAR RKING DEV Marking Value REV.08 39904 1000~300 1 of 2 PZT3904 ELE ECTRICAL CHARACTERISTICS (T ( a=25℃ unlless otherwisse specified) PARA AMETER SYMBLE Collector cut-off curreent ICBO IEBO Emitter cut-off c currennt MIN. TYP P. MAX. UNIT TEST CO ONDITION 0.05 0.05 μA  μA  VCB=50 0V，IE=0 VEB=5 5V，IC=0 V IC=10u uA，IE=0     300  V  V  IC=1m mA，IB=0 DC cuurrent gain V(BR)CBO V(BR)CEO V(BR)EBO hFE* Colllector-Emitteer Saturation Voltage VCE(sat) 0.3 V IC=50mA A，IB=5mA B Base-Emitter Saturation Voltage V VBE(sat) 0.95 V IC=50mA A，IB=5mA Gain Bandwidth B fT MHz VCE=20V， ，IC=10mA， f=10 00MHz Cob Cob Coollector-base breakdown voltage Colllector-Emitteer Breakdownn Voltage Emitter-Base Breakdown B V Voltage 60 40 6 100 300 4     S SOT-223 DIIMENSION N (Unit：mm)   REV.08 2 of 2 IE=10u uA，IC=0 VCE=1V V,IC=10mA pF VCB=5V，IE=0，f=1MHz