ME2604-G

ME2604/ME2604-G N - Channel 250-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2604 is the N-Channel logic enhancement mode power field ● RDS(ON)≦1.7Ω@VGS=10V effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. ● RDS(ON)≦1.9Ω@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter PIN CONFIGURATION (SOT-223) Top View Ordering Information: ME2604(Pb-free) ME2604-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Symbol Rating Unit Drain-Source Voltage VDSS 250 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Maximum Power Dissipation ID IDM TA=25℃ TA=70℃ Operating Junction Temperature PD 0.9 0.7 3.6 2.2 1.4 A A W TJ 150 ℃ Storage Temperature Range Tstg -55 to 150 ℃ Thermal Resistance-Junction to Ambient* RθJA 57 ℃/W * The device mounted on 1in2 FR4 board with 2 oz copper Jul, 2011-Ver1.0 01 ME2604/ME2604-G N - Channel 250-V (D-S) MOSFET Electrical Characteristics (TA=25℃ Unless Otherwise Specified) Symbol Parameter Limit Min BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 250 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1.5 IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-Resistance* Typ Max Unit STATIC V 3.5 V VDS=0V, VGS=±20V ±100 nA VDS=250V, VGS=0V 1 μA VGS=10V, ID=1A 1.4 1.7 VGS=4.5V, ID=1A 1.45 1.9 Diode Forward Voltage * ISD=1A, VGS=0V 0.8 1.2 Qg Total Gate Charge VDS=200V, VGS=10V, ID=1.5A 30 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 12 Ciss Input Capacitance 1170 Coss Output Capacitance Crss Reverse Transfer Capacitance 10 td(on) Turn-On Delay Time 19 tr Turn-On Rise Time VDD=125V, RL =125Ω 4 td(off) Turn-Off Delay Time RG=6Ω, VGEN=10V 48 tf Turn-Off Fall Time VSD Ω V DYNAMIC 17 nC VDS=200V, VGS=4.5V, ID=1.5A VDS=15V, VGS=0V, f=1MHz 3 36 pF ns 13 Notes: a, pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing. b. Matsuki reserves the right to improve product design, functions and reliability without notice. Jul, 2011-Ver1.0 02 ME2604/ME2604-G N - Channel 250-V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) Jul, 2011-Ver1.0 03 ME2604/ME2604-G N - Channel 250-V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) Jul, 2011-Ver1.0 04 SOT-223-3L Package Outline COMMON SYMBOL DIMENSIONS MILLIMETER DIMENSIONS INCH MIN. MOM. MAX. MIN. MOM. MAX. A ─ ─ 1.80 ─ ─ 0.0709 A1 0.02 ─ 0.10 0.0008 ─ 0.0039 A2 1.50 1.60 1.70 0.0591 0.0630 0.0669 b 0.66 0.76 0.84 0.0260 0.0300 0.0330 b1 2.90 3.00 3.10 0.1142 0.1181 0.1220 g ─ ─ 0.06 ─ ─ 0.0020 C 0.23 0.30 0.35 0.0090 0.2560 0.1378 D 6.30 6.50 6.70 0.2480 0.2760 0.2638 E 6.70 7.00 7.30 0.2638 0.1378 0.2874 E1 3.30 3.50 3.70 0.1300 0.1378 0.1457 e 2.30 BSC 0.0906 BSC e1 4.60 BSC 0.1811 BSC L 0.81 ─ ─ 0.0319 ─ ─ θ 0° ─ 10° 0° ─ 10° 文件編號：MQ-3-33-A