NDT451AN-VB

NDT451AN www.VBsemi.com N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET® Power MOSFET 30 RDS(on) () at VGS = 10 V 0.019 RDS(on) () at VGS = 4.5 V 0.021 ID (A) • 100 % Rg and UIS Tested 7 Configuration Single D SOT-223 G D G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL VDS LIMIT Drain-Source Voltage Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID 30 V 7 4.5 IS 5 IDM 31 IAS 10 EAS 5 PD UNIT 4 1.3 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 110 RthJF 38 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mountb °C/W Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. 服务热线：400-655-8788 1 NDT451AN www.VBsemi.com SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage 30 - - 0.5 - 1.5 IDSS Zero Gate Voltage Drain Current On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward VGS = 0 V, ID = 250 μA VDS = VGS, ID = 250 μA IGSS Gate-Source Leakage Transconductanceb VDS VGS(th) RDS(on) gfs VDS = 0 V, VGS = ± 20 V - - ± 100 VGS = 0 V VDS = 30 V - - 1 VGS = 0 V VDS = 30 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 30 V, TJ = 175 °C - - 150 VGS = 10 V VDS5 V 10 - - VGS = 10 V ID = 6 A - 0.019 - V nA μA A VGS = 4.5 V ID = 4.9 A - 0.021 - VGS = 10 V ID = 6 A, TJ = 125 °C - 0.054 VGS = 10 V ID = 6 A, TJ = 175 °C - 0.064 - - 21 - S - 295 pF VDS = 15 V, ID = 5 A  Dynamicb Input Capacitance Ciss Output Capacitance Coss - 67 - Reverse Transfer Capacitance Crss - 25 - Total Gate Chargec Qg - 6 - Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Rg Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and VGS = 0 V VDS = 15 V, f = 1 MHz VGS = 10 V VDS = 15 V, ID = 6 A - 1.2 - - 1 - f = 1 MHz 3.0 6.65 11 - 6 9 VDD = 15 V, RL = 2.5  ID  6 A, VGEN = 10 V, Rg = 1  - 12 18 - 13 20 - 8 12 td(on) tr td(off) tf nC  ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = 3 A, VGS = 0 V - - 31 A - 0.8 1.1 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2 NDT451AN www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 40 40 VGS = 10 V thru 4 V 32 ID - Drain Current (A) ID - Drain Current (A) 32 24 VGS = 3 V 16 24 16 TC = 25 °C 8 8 TC = 125 °C VGS = 2 V TC = - 55 °C 0 0 0 2 4 6 8 0 10 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 30 10 0.10 TC = - 55 °C 0.08 TC = 25 °C RDS(on) - On-Resistance (Ω) gfs - Transconductance (S) 24 18 TC = 125 °C 12 0.06 VGS = 4.5 V 0.04 0.02 6 VGS = 10 V 0.00 0 0.0 1.2 2.4 3.6 ID - Drain Current (A) 4.8 0 6.0 8 16 24 32 40 ID - Drain Current (A) On-Resistance vs. Drain Current Transconductance 500 10 400 8 VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) ID = 6 A Ciss 300 200 100 Coss 6 VDS = 15 V 4 2 Crss 0 0 0 6 12 18 24 30 0 2 4 6 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge 8 10 服务热线：400-655-8788 3 NDT451AN www.VBsemi.com TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 2.0 1.7 1.4 VGS = 4.5 V 1.1 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.8 0.5 - 50 - 25 0.001 0 25 50 75 100 125 150 0.0 175 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 0.25 0.5 0.20 0.2 VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) 10 VGS = 10 V IS - Source Current (A) RDS(on) - On-Resistance (Normalized) ID = 6 A 0.15 0.10 - 0.1 ID = 5 mA - 0.4 ID = 250 μA TJ = 150 °C 0.05 1.2 - 0.7 TJ = 25 °C - 1.0 - 50 - 25 0.00 0 2 4 6 8 10 0 25 50 75 100 VGS - Gate-to-Source Voltage (V) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 125 150 175 40 VDS - Drain-to-Source Voltage (V) ID = 1 mA 38 36 34 32 30 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature 服务热线：400-655-8788 4 NDT451AN www.VBsemi.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID - Drain Current (A) 10 100 μs 1 1 ms Limited by RDS(on)* 10 ms 0.1 100 ms 1s, 10s, DC TC = 25 °C Single Pulse BVDSS Limited 0.01 0.01 0.1 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 Safe Operating Area Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 Single Pulse t1 t2 2. Per Unit Base = R thJA = 110 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 服务热线：400-655-8788 5 NDT451AN www.VBsemi.com THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. 服务热线：400-655-8788 6 NDT451AN www.VBsemi.com SOT-223 (HIGH VOLTAGE) B D A 3 0.08 (0.003) B1 C 0.10 (0.004) M C B M A 4 3 H E 0.20 (0.008) M C A M L1 1 2 3 4xL 3xB e θ 0.10 (0.004) M C B M e1 4xC MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 1.55 1.80 0.061 0.071 0.033 B 0.65 0.85 0.026 B1 2.95 3.15 0.116 0.124 C 0.25 0.35 0.010 0.014 D 6.30 6.70 0.248 0.264 E 3.30 3.70 0.130 e 2.30 BSC e1 4.60 BSC 0.181 BSC H 6.71 7.29 0.264 L 0.91 - 0.036 L1 θ 0.061 BSC - 0.146 0.0905 BSC 0.287 0.0024 BSC 10' - 10' ECN: S-82109-Rev. A, 15-Sep-08 DWG: 5969 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension do not include mold flash. 4. Outline conforms to JEDEC outline TO-261AA. 服务热线：400-655-8788 7 NDT451AN www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. 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