2N5401

2N5401 SOT-23 Plastic-Encapsulate Transistors SOT-23 3 2N5401 2 Features: 1 □ PNP Transistor □ Complementary to MMBT5551 □ Ideal for Medium Power Amplification and Switching Marking:2L Absolute Maximum Ratings 1.Base (B) 2. Emitter (E) 3.Collector (C) (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Ic 0.6 A Collector Power Dissipation PD 0.3 W Thermal Resistance from Junction to Ambient RθJA 416 ℃/W Tj 150 ℃ Tstg -55 to +150 ℃ Collector Current Junction Temperature(MAX.) Storage Temperature Electrical Characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test conditions Min. Typ. Max. Unit Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 -160 - - V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -150 - - V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -5 - - V -0.1 μA Collector cut-off current ICBO VCB=-120V, IE=0 Emitter cut-off current IEBO VEB=-4V, IC=0 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency - - - -0.1 μA hFE(1) * VCE=-5V, IC=-1mA 80 - - - hFE(2) * VCE=-5V, IC=-10mA 100 - 300 - hFE(3) * VCE=-5V, IC=-50mA 50 - - - VCE(sat)1* IC=-10mA, IB=-1mA - - -0.2 VCE(sat)2* IC=-50mA, IB=-5mA - - -0.5 V VBE(sat)1* IC=-10mA, IB=-1mA - - -1 V VBE(sat)2* IC=-50mA, IB=-5mA - - -1 V FT VCE=-5V,IC=-10mA, f=30MHz 100 - - MHz CLASSIFICATION OF hFE (2) RANK L H RANGE *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. 100-200 200-300 V 2N5401 SOT-23 Plastic-Encapsulate Transistors Typical Characteristics Fig.2 Forward Characteristics 2N5401 SOT-23 Plastic-Encapsulate Transistors Package Dimension SOT-23 Unit: mm