MMBT5551

MMBT5551 NPN TRANSISTORS Features � �D� 宏迦橙 SOT-23 Plastic-Encapsulate Transistors Collector-Base Voltage VCBO 180V Collector Current 0.6 Ampere •Complementary to MMBT5401 •Power dissipation of 300mW •High stability and high reliability •Meets MSL level 1, per J-STD-020, LF maximum peak of 260℃ Mechanical Data •Case: SOT-23 Molding compound meets UL 94V-0 flammability rating, RoHScompliant,halogen-free •Terminals: Solder plated, solderable per MIL-STD-750,Method 2026 Function Diagram 1 B SOT-23 3 C 3 G1 www.ichjc.com 1 2 E 2 Maximum Ratings (Ta=25℃ Unless otherwise specified) PARAMETER SYMBOL UNIT VALUE Collector-Emitter Voltage VCEO V 160 IC A Collector-Base Voltage VCBO Emitter-Base Voltage VEBO Collector Power Dissipation PC mW Tj ℃ Collector Current Storage temperature Tstg Typical Thermal Resistance RθJ-A Junction temperature Electrical Characteristics (Ta=25℃ Unless otherwise noted) PARAMETER SYMBOL UNIT Collector-Emitter Breakdown Voltage V(BR)CEO V Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base cut-off current Emitter-Base cut-off current V(BR)CBO V(BR)EBO ICBO IEBO DC Current Gain hFE Collector-Emitter Saturation Voltage VCE(sat)1 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Revision:BJT-May.2023-A1 VCE(sat)2 VBE(sat)1 VBE(sat)2 nA － V 180 6.0 0.6 300 ℃ -55 ~+150 ℃ /W 417 -55 ~+150 Condition Min Max IC=1.0mA, IB=0 160 － IC=100μA, IE=0 IE=10μA, IC=0 VCB= 120V, IB=0 VEB= 4.0V, IC=0 IC= 1.0mA, VCE= 5.0V 180 6.0 － － － 50 80 － － 50 IC= 10mA, VCE= 5.0V 100 300 IC= 10mA, IB= 1.0mA － 0.15 － 1.0 IC= 50mA, VCE=5.0V IC= 50mA, IB= 5.0mA IC= 10mA, IB= 1.0mA IC= 50mA, IB= 5.0mA Zhuhai Hongjiacheng Technology co., Ltd 30 － － － 0.2 1.0 1 of 3 � �D� 宏迦橙 MMBT5551 www.ichjc.com NPN TRANSISTORS Small-signal Characteristics ITEM SYMBOL Transition frequency fT Ordering Information PACKAGE PACKAGE CODE SOT-23 R1 Condition IC= 10mA, VCE= 10V, f=100MHz UNIT WEIGHT(g) REEL(pcs) 0.008 3000 BOX(pcs) 30000 UNIT Min MHz Max 100 CARTON(pcs) 300 DELIVERY MODE 120000 7'' Ratings And Characteristics Curves (Ta=25℃ Unless otherwise specified) 18 Ta=25℃ Ta=100℃ 80μA 15 12 60μA 40μA 6 Ta=25℃ 100 50μA 9 30μA Ib=20μA 3 0 0 2 6 4 8 COLLECT-ENITTER
VOLTAGE


VCE(V) 10 12 10 1 10 COLLECTOR
CURRENT


I（mA) C 0.5 Ta=25℃ 0.6 0.1 Ta=100℃ 0.4 0.2 0.1 1 10 COLLECTOR
CURRENT


IC(mA) 100 Fig.3 Collector-Emitter Saturation Voltage Revision:BJT-May.2023-A1 200 100 200 Ic： Ib=10:1 BASE-EMITTER
VOLTAGE


VBESAT(V)

COLLECTOR-EMITTER
VOLTAGE


VCESAT(V) Ic： Ib=10:1 0.8 100 Fig.2 DC Current Gain Fig.1 Static Characteristic 1.0 VCE=5V 70μA DC
CURRENT
GAIN


hFE

COLLECTOR
CURRENT


IC(mA) 500 90μA 200 0.01 Ta=100℃ Ta=25℃ 1 10 COLLECTOR
CURRENT


I（mA) C Fig.4 Base-Emitter Saturation Voltage Zhuhai Hongjiacheng Technology co., Ltd 2 of 3 � �D� 宏迦橙 MMBT5551 www.ichjc.com NPN TRANSISTORS Ratings And Characteristics Curves (Ta=25℃ Unless otherwise specified) 200 100 100 VCE=-5V Cib CAPACITANCE


C(pf)
COLLECTOR
CURRENT


IC(mA) Ta=100℃ 10 Ta=25℃ 10 1 0.2 0.4 fT=1MHz Ta=25℃ 0.6 0.8 1 0.1 1.0 BASE-ENITTER
VOLTAGE


VBE(V) Cob Fig.5 Base-Emitter On Voltage Fig.6 Cob/Cib-VCBVEB Package Outline Dimensions (SOT-23) D θ b L1 E1 Symbol A A1 E e 0.25 c e1 L D E J M 0.30 J Revision:BJT-May.2023-A1 M N 0.950TYP 0.550REF - 1.05 0.035 0.041 0.20 0.004 2.55 0.020 0.008 0.110 0.118 0.047 0.055 0.089 0.100 0.037TYP 0.50 0.012 0.020 8° 0.022REF - Dimensions 0.85 0.95 Zhuhai Hongjiacheng Technology co., Ltd 0.012 0.079 Max. 1.85 0.004 0.071 Min. 1.95 - 2.00 Millimeters 0.75 Max. 0.045 1.40 2.25 Min. 0.035 3.00 1.20 Inches 1.15 0.50 2.80 L1 K N 0.30 1.80 Symbol K 0.10 e1 θ Suggested Pad Layout - 0.90 0.10 L A1 Max. c b Dimensions Min. 0.90 e A Millimeters A2 E1 A2 20 10 1 REVERSE
VOLTAGE


VR(V) Min. 8° Inches Max. 0.85 0.030 0.033 2.05 0.077 0.081 1.95 0.033 0.073 0.037 0.077 3 of 3