Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
Suzhou Huatai Electronics
LDMOS RF Power Transistor
HTU7G06S0P5P
1. Description
HTU7G06S0P5P is a MOSFET type transistor
specifically designed for VHF/UHF RF Power
Amplifier applications.
This device has an internal monolithic Zener
diode from gate to source for ESD protection.
100-600MHz, 0.5W, 3.6V
WIDE BAND
RF POWER LDMOS TRANSISTOR
2. Features
OUTLINE DRAWING
High power:
Mark: H06P5A
4.4 +/-0.1
Pout=0.7W @VDD=4V, f=430MHz
1.6 +/-0.1
High Efficiency:
1.5 +/-0.1
2
Integrated gate protection diode
4.1 +/-0.15
2.5 +/-0.1
ηd=70% @VDD=4V, f=430MHz
1
1 +/-0.1
3. Application
For output stage of high power amplifiers in
2
3
0.4 +0.04
-0.05
1.5 +/-0.1
0.42 +/-0.1
VHF/UHF Band mobile radio sets.
For drive stage of high power amplifiers in
Terminal No.
1 : Gate
2 : Source
3 : Drain
UNIT：mm
Universal Broadband.
4. Absolute Maximum Rarings
Parameter
Symbol
Conditions
Ratings
Unit
Drain to source voltage
VDSS
Vgs=0V
17
V
Gate to source voltage
VGSS
Vds=0V
-5 ~ 10
V
Operating Voltage
VDD
-
8.5
V
Storage temperature
Tstg
-
-55 ~ 150
℃
Operating Junction Temperature
TJ
-
-40 ~ 150
℃
Thermal resistance
Zth(j-c)
Junction to case
25
℃/W
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
1 / 22
Suzhou Huatai Electronics
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
5. Electrical Characteristics
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Breakdown Voltage
V(BR)DDS
VGG=0V, ID=8uA
17
-
-
V
Zero Gate Voltage
Drain Leakage Current
IDSS
VDD=17V, VGG=0V
1
-
-
uA
Gate-Source Leakage
Current
IGSS
VDD=0V, VGG=10V
1
-
-
uA
Gate Threshold
Voltage
Vth
VDD=VGG, Id=8uA
0.5
1.0
1.5
V
Output Power
Pout
-
0.7
-
W
Drain Efficiency
ηd
VDD=4V, Pin=0.1W
f=430MHz,IDQ=50mA
-
70
-
%
Output Power
Pout
-
1.5
-
W
Drain Efficiency
ηd
VDD=7.2V, Pin=31mW
f=530MHz,IDQ=50mA
-
73
-
%
6. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1B
Machine Model (per EIA/JESD22-A115)
A
Charge Device Model (per JESD22-C101)
III
7. Load Mismatch（in Huatai Test Fixture）
Test Methodology
VSWR = 20:1 at all Phase Angles
CW: VDD=8.4Vdc, IDQ=50mA, f=435MHz, Pout =32dBm.
Results
No Device Degradation
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
2 / 22
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
Suzhou Huatai Electronics
8. Typical Characteristics
CHANNEL DISSIPATION VS.
IDS VS. VGS
AMBIENT TEMPERATURE
1.50
On PCB with Heat-sink
Ta=+25℃
VDS=4V
1.25
8
1.00
6
IDS (A)
CHANNEL DISSIPATION (W)
10
0.75
4
0.50
2
0.25
0.00
0.0
0
0
1.0
20
40
60
80
100
120
140
160
0.5
1.0
1.5
2.0
2.5
AMBIENT TEMPERATURE (℃)
VGS (V)
IDS VS. VDS
Ciss VS.VGS
20
Ta=+25℃
VGS=2.9V
3.0
3.5
4.0
Ta=+25℃
f=1MHz
VGS=2.6V
0.8
0.6
Ciss (pF)
IDS (A)
15
VGS=2.3V
0.4
10
VGS=2.0V
5
0.2
VGS=1.7V
VGS=1.4V
0.0
0
0
5
2
4
6
8
10
0
1
2
3
VDS (V)
VGS (V)
Crss VS. VDG
Coss VS. VDS
15
Ta=+25℃
f=1MHz
4
5
Ta=+25℃
f=1MHz
Coss (pF)
Crss (pF)
4
3
2
10
5
1
0
0
0
5
10
VDG (V)
15
20
0
5
10
15
20
VDS (V)
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
3 / 22
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
Suzhou Huatai Electronics
9. Typical Characteristics @VDD=4V, 400-470MHz
25
70
Pout
Gain
IDS
ηd
20 Ta=+25℃
15
VDD=4V
Pin=20dBm
IDQ=50mA
50
10
40
5
30
410
420
430
440
450
0.6 Ta=+25℃
0.4
Pout
IDS
ηd
VDD=4V
Pin=0.1W
IDQ=50mA
1.0
80
70
50
ηd (%)
Ta=+25℃
f=430MHz
Pin=0.1W
IDQ=50mA
40
Pout (W), IDS (A)
0.8
60
450
460
4
5
6
7
100
80
0.6
Pout
IDS
ηd
0.4
8
0.5
1.0
1.5
2.0
2.5
VDD (V)
VGG (V)
Pout VS. Pin @ f = 400MHz
Pout VS. Pin @ f = 400MHz
80
Ta=+25℃
f=400MHz
VDD=4V
IDQ=50mA
1.0
70
60
Pout
Gain
IDS
ηd
20
15
50
40
10
30
5
20
Pout (W), IDS(A)
0.8
25
10
-5
0
5
10
Pin (dBm)
15
20
40
80
0.6
60
Pout
IDS
ηd
0.4
0.0
0.00
0
3.0
100
Ta=+25℃
f=400MHz
VDD=4V
IDQ=50mA
0.2
0
60
20
0.0
0.0
20
3
40
0
470
Ta=+25℃
f=430MHz
Pin=0.1W
VDD=4V
0.2
30
0.0
30
440
Pout VS. VGG @ f = 430MHz
0.5
35
430
Pout VS. VDD @ f = 430MHz
2.0
1.0
420
f (MHz)
2.5
1.5
410
f (MHz)
Pout
IDS
ηd
60
20
0.0
400
20
470
460
3.0
Pout (dBm), Gain (dB), IDS(A)
80
0.2
0
400
Pout (W), IDS (A)
60
0.8
ηd (%)
80
100
ηd (%)
30
1.0
40
ηd (%)
90
Pout (W), IDS(A)
35
ηd (%)
Pout VS. f @ VDD=4V
ηd (%)
Pout (dBm), Gain (dB), IDS(A)
Pout VS. f @ VDD=4V
20
0.02
0.04
0.06
0.08
0
0.10
Pin (W)
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
4 / 22
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
Suzhou Huatai Electronics
Pout VS. Pin @ f = 430MHz
60
Pout
Gain
IDS
ηd
20
15
50
40
10
30
5
20
80
0.6
60
Pout
IDS
ηd
0.4
0.2
0
30
5
10
15
20
0.02
0.04
0.06
Pin (W)
Pout VS. Pin @ f = 470MHz
Pout VS. Pin @ f = 470MHz
1.0
80
Ta=+25℃
f=470MHz
VDD=4V
IDQ=50mA
70
0.8
25
60
Pout
Gain
IDS
ηd
20
15
50
40
10
30
5
20
100
Ta=+25℃
f=470MHz
VDD=4V
IDQ=50mA
80
0.6
60
Pout
IDS
ηd
0.4
0.2
0
10
-5
0
5
10
Pin (dBm)
15
20
0
0.10
0.08
Pin (dBm)
Pout (W), IDS(A)
35
0
40
20
0.0
0.00
10
-5
Pout (dBm), Gain (dB), IDS(A)
Pout (W), IDS(A)
0.8
25
ηd (%)
70
100
Ta=+25℃
f=430MHz
VDD=4V
IDQ=50mA
0.0
0.00
40
ηd (%)
Ta=+25℃
f=430MHz
VDD=4V
IDQ=50mA
ηd (%)
30
Pout VS. Pin @ f = 430MHz
1.0
80
ηd (%)
Pout (dBm), Gain (dB), IDS(A)
35
20
0.02
0.04
0.06
0.08
0
0.10
Pin (W)
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
5 / 22
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
Suzhou Huatai Electronics
10.Test Circuit @VDD=4V, 400-470MHz
400-470MHz (@VDD=4.0V, Idq = 50mA)
VDD
8mm
VGG
C8
C9
C10
L3
C7
C6
C5
8mm
4mm
7mm
L2
C4
4mm
RF-out
R1
C1
5mm
5mm
L1
3mm
C3
3mm
RF-in
Q1
C2
Note: The characteristic impedance of all microstrip lines: 50ohm
No.
Description
P/N
Manufacturer
C1
220pF Chip Ceramic Capacitors
GRM1885C1H221JA01
muRata
C2
15pF Chip Ceramic Capacitors
GRM1885C1H150JA01
muRata
C3
15pF Chip Ceramic Capacitors
GRM1885C1H150JA01
muRata
C4
220pF Chip Ceramic Capacitors
GRM1885C1H221JA01
muRata
C5
220pF Chip Ceramic Capacitors
GRM1885C1H220JA01
muRata
C6
1nF Chip Ceramic Capacitors
GRM1885C1H102JA01
muRata
C7
4.7uF Chip Ceramic Capacitors
GRM32ER61H474KA12L
muRata
C8
220pF Chip Ceramic Capacitors
GRM1885C1H221JA01
muRata
C9
1nF Chip Ceramic Capacitors
GRM1885C1H102JA01
muRata
C10
10uF Chip Ceramic Capacitors
GRM32ER61H105KA12L
muRata
L1
6.8nH Chip Ceramic inductance
-
-
L2
D: 0.31mm, Inside: 1.5mm, 2 Turns
Enameled wire
-
L3
D: 0.3mm, Inside: 1.5mm, 8 Turns
Enameled wire
-
R1
100Ω Chip Resistors
-
-
Q1
RF LDMOS
HTU7G06S0P5P
Suzhou Huatai
Electronics Ltd.
PCB
Er=4.5
FR4
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
6 / 22
Suzhou Huatai Electronics
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
11.Input/Output Impedance Characteristics @VDD=4V, 400-470MHz
Termination
50 ohm
Input Matching Network
of Test Circuit
Output Matching Network
of Test Circuit
Zsource
Termination
50 ohm
Zload
@Pin=0.1W,VDD=4V,IDQ=50mA
f(MHz)
Zsource (ohm)
400
11.88 + j 28.26
435
13.56 + j 33.71
470
15.93 + j 38.83
@Pin=0.1W,VDD=4V,IDQ=50mA
f(MHz)
Zload (ohm)
400
12.25 + j 10.64
435
11.03 + j 14.55
470
10.14 + j 18.41
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
7 / 22
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
Suzhou Huatai Electronics
12.Typical Characteristics @VDD=7.2V, 500-560MHz
Pout VS. VGG @ f = 530MHz
1.6
80
2.4
1.4
70
2.1
1.2 Ta=+25℃
Pout
IDS
ηd
Gain
VDD=7.2V
1.0 IDQ=50mA
50
40
70
1.8
60
1.5
Pout
IDS
ηd
Gain
1.2
0.9
50
40
0.6
30
0.4
20
0.6
20
0.2
10
0.3
10
0.0
500
510
520
530
540
550
VGG (V)
Pout VS. Pin @ f = 530MHz
Ta=+25℃
f=530MHz
VDD=7.2V
IDQ=50mA
4.0
70
3.5 Ta=+25℃
30
60
25
50
20
40
15
30
Pout
Gain
IDS
ηd
10
5
0
0
3.0
5
10
Pout (W), IDS (A)
35
Pout VS. VDD @ f = 530MHz
80
ηd (%)
40
30
0.0
0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
0
560
f (MHz)
Pout (dBm), Gain (dB), IDS (A)
80
80
70
f=530MHz
IDQ=50mA
Pin=15dBm(31mW)
2.5
60
50
Pout
IDS
ηd
Gain
2.0
1.5
40
30
20
1.0
20
10
0.5
10
0
0.0
0
3
15
Pin (dBm)
ηd (%), Gain (dB)
0.8
Pin=15dBm(31mW)
60
90
Ta=+25℃
f=530MHz
VDD=7.2V
Pin=15dBm(31mW)
ηd (%), Gain (dB)
2.7
Pout (W), IDS (A)
90
ηd (%), Gain (dB)
Pout (W), IDS (A)
Pout VS. f @ VDD=7.2V
1.8
4
5
6
7
8
9
10
VDD (V)
80
2.1
70
1.8
60
1.5
50
1.2
Ta=+25℃
f=530MHz
VDD=7.2V
IDQ=50mA
0.9
40
Pout
IDS
ηd
ηd (%)
Pout (W), IDS (A)
Pout VS. Pin @ f = 530MHz
2.4
30
0.6
20
0.3
10
0.0
0
0
10
20
30
40
50
60
70
Pin (mW)
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
8 / 22
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
Suzhou Huatai Electronics
13.Test Circuit @VDD=7.2V, 500-560MHz
500-560MHz (@VDD=7.2V, Idq = 50mA)
VDD
8mm
VGG
C8
C9
C10
L3
C7
C6
C5
8mm
4mm
L2
C4
3mm
7mm
RF-out
R1
C1
5mm
7mm
L1
3mm
C3
3mm
RF-in
C2
Note: The characteristic impedance of all microstrip lines: 50ohm
No.
Description
P/N
Manufacturer
C1
100pF Chip Ceramic Capacitors
GRM1885C1H101JA01
muRata
C2
10pF Chip Ceramic Capacitors
GRM1885C1H100JA01
muRata
C3
6pF Chip Ceramic Capacitors
GRM1885C1H060JA01
muRata
C4
100pF Chip Ceramic Capacitors
GRM1885C1H101JA01
muRata
C5
100pF Chip Ceramic Capacitors
GRM1885C1H101JA01
muRata
C6
1nF Chip Ceramic Capacitors
GRM1885C1H102JA01
muRata
C7
4.7uF Chip Ceramic Capacitors
GRM32ER61H474KA12L
muRata
C8
100pF Chip Ceramic Capacitors
GRM1885C1H101JA01
muRata
C9
1nF Chip Ceramic Capacitors
GRM1885C1H102JA01
muRata
C10
10uF Chip Ceramic Capacitors
GRM32ER61H105KA12L
muRata
L1
6.8nH Chip Ceramic inductance
-
-
L2
D: 0.35mm, Inside: 1.5mm, 2 Turns
Enameled wire
-
L3
D: 0.3mm, Inside: 1.5mm, 8 Turns
Enameled wire
-
R1
100Ω Chip Resistors
-
-
Q1
RF LDMOS
HTU7G06S0P5P
Suzhou Huatai
Electronics Ltd.
PCB
Er=4.5
FR4
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
9 / 22
Suzhou Huatai Electronics
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
14.Input/Output Impedance Characteristics @VDD=7.2V, 500-560MHz
Termination
50 ohm
Input Matching Network
of Test Circuit
Output Matching Network
of Test Circuit
Zsource
Termination
50 ohm
Zload
@Pin=31mW,VDD=7.2V,IDQ=50mA
f(MHz)
Zsource (ohm)
500
70.45 + j 20.79
530
76.29 + j 16.66
560
74.05 + j 16.43
@Pin=31mW,VDD=7.2V,IDQ=50mA
f(MHz)
Zload (ohm)
500
20.66 + j 27.01
530
20.16 + j 31.00
560
20.08 + j 35.28
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
10 / 22
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
Suzhou Huatai Electronics
15. Typical Characteristics @VDD=7.2V, 135-175MHz
90
2.7
1.4
80
2.4 f=135/155/175MHz
1.2
70
IDQ=50mA
0.6 Pin=15dBm(31mW)
50
40
0.4
30
0.2
20
35
150
160
60
1.5
50
1.2
40
Pout
IDS
ηd
Gain
0.9
30
20
10
0.0
0
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
f (MHz)
VGG (V)
Pout VS. Pin @ f = 135/155/175MHz
Pout VS. VDD @ f = 135/155/175MHz
Ta=+25℃
f=135/155/175MHz
VDD=7.2V
IDQ=50mA
30
80
2.7
70
2.4
60
25
50
20
40
15
10
5
30
—— f=135MHz
- - - f=155MHz
····· f=175MHz
Pout
Gain
IDS
ηd
20
0
2
70
0.3
10
180
170
80
1.8
0.6
4
6
8
10
12
14
16
18
Pout (W), IDS (A)
40
140
VDD=7.2V
Pin=15dBm(31mW)
90
—— f=135MHz
- - - f=155MHz
····· f=175MHz
80
2.1
70
1.8
60
1.5
Ta=+25℃
f=135/155/175MHz
Pout
IDS
ηd
Gain
1.2 IDQ=50mA
0.9
Pin=15dBm(31mW)
50
40
30
0.6
20
10
0.3
10
0
0.0
0
3
20
ηd (%), Gain (dB)
Ta=+25℃
0.8 VDD=7.2V
Pout (W), IDS (A)
60
Pout
IDS
ηd
Gain
ηd (%), Gain (dB)
1.0
2.1
90
—— f=135MHz
- - - f=155MHz
- ·- f=175MHz
Ta=+25℃
ηd (%), Gain (dB)
1.6
0.0
130
Pout (dBm), Gain (dB), IDS (A)
Pout VS. VGG @ f = 135/155/175MHz
ηd (%)
Pout (W), IDS (A)
Pout VS. f @ VDD=7.2V
4
5
6
7
8
9
10
VDD (V)
Pin (dBm)
2.4
80
2.1
70
1.8
60
1.5
50
1.2
40
0.9
Ta=+25℃
f=135/155/175MHz
VDD=7.2V
IDQ=50mA
0.6
—— f=135MHz
- - - f=155MHz
····· f=175MHz
0.3
Pout
IDS
ηd
ηd (%)
Pout (W), IDS (A)
Pout VS. Pin @ f = 135/155/175MHz
30
20
10
0.0
0
10
20
30
40
50
60
70
80
0
90 100
Pin (mW)
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
11 / 22
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
Suzhou Huatai Electronics
16.Test Circuit @VDD=7.2V, 135-175MHz
135-175MHz (@VDD=7.2V, Idq = 50mA)
VDD
8mm
VGG
C8
C9
C10
L3
C7
C6
C5
8mm
4mm
R1
C1 13mm
L1
L2
3mm
2mm
2mm
6mm
C4
RF-out
C2
C3
3mm
RF-in
Note: The characteristic impedance of all microstrip lines: 50ohm
No.
Description
P/N
Manufacturer
C1
470pF Chip Ceramic Capacitors
GRM1885C1H471JA01
muRata
C2
10pF Chip Ceramic Capacitors
GRM1885C1H100JA01
muRata
C3
15pF Chip Ceramic Capacitors
GRM1885C1H150JA01
muRata
C4
470pF Chip Ceramic Capacitors
GRM1885C1H471JA01
muRata
C5
470pF Chip Ceramic Capacitors
GRM1885C1H471JA01
muRata
C6
1nF Chip Ceramic Capacitors
GRM1885C1H102JA01
muRata
C7
4.7uF Chip Ceramic Capacitors
GRM32ER61H474KA12L
muRata
C8
470pF Chip Ceramic Capacitors
GRM1885C1H471JA01
muRata
C9
1nF Chip Ceramic Capacitors
GRM1885C1H102JA01
muRata
C10
10uF Chip Ceramic Capacitors
GRM32ER61H105KA12L
muRata
L1
47nH Chip Ceramic inductance
-
-
L2
D: 0.35mm, Inside: 1.5mm, 3 Turns
Enameled wire
-
L3
D: 0.3mm, Inside: 1.5mm, 8 Turns
Enameled wire
-
R1
100Ω Chip Resistors
-
-
Q1
RF LDMOS
HTU7G06S0P5P
Suzhou Huatai
Electronics Ltd.
PCB
Er=4.5
FR4
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
12 / 22
Suzhou Huatai Electronics
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
17.Input/Output Impedance Characteristics @VDD=7.2V, 135-175MHz
Termination
50 ohm
Input Matching Network
of Test Circuit
Output Matching Network
of Test Circuit
Zsource
Termination
50 ohm
Zload
@Pin=31mW,VDD=7.2V,IDQ=50mA
f(MHz)
Zsource (ohm)
135
38.34 + j 17.95
155
40.96 + j 21.88
175
42.73 + j 22.86
@Pin=31mW,VDD=7.2V,IDQ=50mA
f(MHz)
Zload (ohm)
135
27.70 + j 5.53
155
24.01 + j 1.02
175
18.70 + j 2.03
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
13 / 22
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
Suzhou Huatai Electronics
18.Typical Characteristics @VDD=7.2V, 880-950MHz
80
2.1
70
2.1
70
1.8
60
1.8
60
1.5
50
1.2
Ta=+25℃
VDD=7.2V
IDQ=50mA
Pin=15dBm(31mW)
50
Pout
IDS
ηd
Gain
0.9
40
30
1.2
0.9
0.6
20
0.6
0.3
10
0.3
0.0
880
890
900
910
920
930
940
0
2.1
2.4
70
25
60
20
50
15
40
Ta=+25℃
—— f=890MHz
f=890/920/940MHz - - - f=920MHz
VDD=7.2V
····· f=940MHz
IDQ=50mA
Pout
Gain
IDS
ηd
0
30
20
6
8
10
12
14
16
80
2.1
70
1.8
60
1.5
1.2
0.9
Ta=+25℃
f=890/920/940MHz
IDQ=50mA
Pin=15dBm(31mW)
Pout
IDS
ηd
Gain
Pin (dBm)
40
30
20
0.3
10
0
3
18
50
0.6
0.0
10
4
90
—— f=890MHz
- - - f=920MHz
····· f=940MHz
2.4
Pout (W), IDS (A)
30
2.7
ηd (%)
Pout (dBm), Gain (dB), IDS (A)
Pout VS. VDD @ f = 890/920/940MHz
80
2
2.7
VGG (V)
Pout VS. Pin @ f = 890/920/940MHz
0
20
0.0
0
950
35
5
30
10
f (MHz)
10
40
Pout
IDS
ηd
Gain
Ta=+25℃
—— f=890MHz
f=890/920/940MHz
- - - f=920MHz
VDD=7.2V
- ·- f=940MHz
Pin=15dBm(31mW)
ηd (%), Gain (dB)
1.5
Pout (W), IDS (A)
2.4
ηd (%), Gain (dB)
Pout VS. VGG @ f = 890/920/940MHz
80
ηd (%), Gain (dB)
Pout (W), IDS (A)
Pout VS. f @ VDD=7.2V
2.4
4
5
6
7
8
9
10
VDD (V)
Pout VS. Pin @ f = 890/920/940MHz
Pout (W), IDS (A)
1.8
100
Ta=+25℃
f=890/920/940MHz
VDD=7.2V
IDQ=50mA
90
1.5
80
1.2
70
0.9
—— f=890MHz
- - - f=920MHz
····· f=940MHz
0.6
Pout
IDS
ηd
0.3
60
ηd (%)
2.1
50
40
0.0
30
0
10
20
30
40
50
60
70
Pin (mW)
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
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Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
Suzhou Huatai Electronics
19.Test Circuit @VDD=7.2V, 880-950MHz
880-950MHz (@VDD=7.2V, Idq = 50mA)
VDD
8mm
VGG
C9
C10
C11
5mm
C5
L1
C8
C7
C6
8mm
4mm
5mm
15mm
RF-out
R1
C1
10mm
2mm
3mm
C3
C4
3mm
RF-in
C2
Note: The characteristic impedance of all microstrip lines: 50ohm
No.
Description
P/N
Manufacturer
C1
47pF Chip Ceramic Capacitors
GRM1885C1H470JA01
muRata
C2
15pF Chip Ceramic Capacitors
GRM1885C1H150JA01
muRata
C3
6pF Chip Ceramic Capacitors
GRM1885C1H060JA01
muRata
C4
2pF Chip Ceramic Capacitors
GRM1885C1H020JA01
muRata
C5
47pF Chip Ceramic Capacitors
GRM1885C1H470JA01
muRata
C6
100pF Chip Ceramic Capacitors
GRM1885C1H101JA01
muRata
C7
1nF Chip Ceramic Capacitors
GRM1885C1H102JA01
muRata
C8
4.7uF Chip Ceramic Capacitors
GRM32ER61H474KA12L
muRata
C9
100pF Chip Ceramic Capacitors
GRM1885C1H101JA01
muRata
C10
1nF Chip Ceramic Capacitors
GRM1885C1H102JA01
muRata
C11
10uF Chip Ceramic Capacitors
GRM32ER61H105KA12L
muRata
L1
D: 0.35mm, Inside: 1.5mm, 2 Turns
Enameled wire
-
R1
51Ω Chip Resistors
-
-
Q1
RF LDMOS
HTU7G06S0P5P
Suzhou Huatai
Electronics Ltd.
PCB
Er=4.5
FR4
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
15 / 22
Suzhou Huatai Electronics
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
20.Input/Output Impedance Characteristics @VDD=7.2V, 880-950MHz
Termination
50 ohm
Input Matching Network
of Test Circuit
Output Matching Network
of Test Circuit
Zsource
Termination
50 ohm
Zload
@Pin=31mW,VDD=7.2V,IDQ=50mA
f(MHz)
Zsource (ohm)
890
5.09 + j 47.15
920
5.02 + j 50.19
940
5.00 + j 52.41
@Pin=31mW,VDD=7.2V,IDQ=50mA
f(MHz)
Zload (ohm)
890
18.87 + j 41.11
920
20.17 + j 43.18
940
20.86 + j 44.49
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
16 / 22
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
Suzhou Huatai Electronics
21.Typical Characteristics @VDD=4V, 400-470MHz
The Test Circuit is Absolutely Stable in the UHF-band with Feedback
Pout VS. f @ VDD=4V
Pout VS. f @ VDD=4V
70
30
60
1.0
IDS
25
50
Pout
Ta=+25℃
VDD=4V
Pin=20dBm
IDQ=50mA
20
15
40
Gain
d
30
IDS
10
Pout(W),IDS(A)
0.8
d(%)
d
64
0.6
Ta=+25℃
VDD=4V
Pin=0.1W
IDQ=50mA
0.4
60
56
20
0.2
10
410
420
430
440
450
460
52
0.0
0
470
400
460
0.8
0.7
70
65
d
1
60
Pout(W),IDS(A)
0.6
d(%)
Pout(W),IDS(A)
450
Pout VS. VGG @ f = 430MHz
IDS
55
0
50
4
5
6
7
0.5
IDS
d
0.4
Ta=+25℃
f=400MHz
VDD=4V
IDQ=50mA
45
0.2
40
0.1
35
0.5
30
1.5
1.0
0.8
0.7
60
Gain
15
IDS
40
d
30
d(%)
20
Pout(W),IDS(A)
0.6
50
Pout
Pout
IDS
d
50
40
30
0.2
20
0.1
10
10
0
0.0
0.00
20
60
0.3
5
15
70
0.4
20
0
80
Ta=+25℃
f=400MHz
VDD=4V
IDQ=50mA
0.5
10
Pin(dBm)
50
Pout VS. Pin @ f = 400MHz
70
10
55
0.3
Pout VS. Pin @ f = 400MHz
5
60
Pout
VGG(V)
35
0
65
Ta=+25℃
f=430MHz
Pin=0.1W
VDD=4V
0.0
0.0
8
470
70
VDD(V)
25
440
Pout VS. VDD @ f = 430MHz
Pout
30
430
f (MHz)
75
3
420
f (MHz)
Ta=+25℃
f=430MHz
Pin=0.1W
IDQ=50mA
2
410
d(%)
5
0
400
Pout(dBm),Gain(dB),IDS(A)
68
0.02
0.04
0.06
0.08
d(%)
Pout(dBm),Gain(dB),IDS(A)
Pout
d(%)
35
0
0.10
Pin(W)
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
17 / 22
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
Suzhou Huatai Electronics
Pout VS. Pin @ f = 430MHz
Ta=+25℃
f=430MHz
VDD=4V
IDQ=50mA
0.6
50
Pout
Gain
20
40
d
IDS
15
30
0.1
10
0.02
Pin(dBm)
Pout VS. Pin @ f = 470MHz
Pout
Gain
d
0.8
60
0.7
0.6
50
IDS
Pout(W),IDS(A)
25
40
15
30
10
20
5
10
0
0.0
0.00
0
5
10
0.08
0
0.10
15
20
80
70
Ta=+25℃
f=470MHz
VDD=4V
IDQ=50mA
60
0.5
20
0
0.06
Pout VS. Pin @ f = 470MHz
70
d(%)
Pout(dBm),Gain(dB),IDS(A)
30
0.04
Pin(W)
35
Ta=+25℃
f=470MHz
VDD=4V
IDQ=50mA
40
20
0.0
0.00
20
d
50
0.2
0
15
IDS
30
10
10
Pout
0.3
5
5
60
0.4
20
0
70
0.5
10
0
80
Ta=+25℃
f=430MHz
VDD=4V
IDQ=50mA
Pout
IDS
0.4
50
40
d
0.3
30
0.2
20
0.1
10
0.02
0.04
0.06
0.08
d(%)
25
0.7
60
Pout(W),IDS(A)
30
d(%)
Pout(dBm),Gain(dB),IDS(A)
0.8
70
d(%)
Pout VS. Pin @ f = 430MHz
35
0
0.10
Pin(W)
Pin(dBm)
Stabfact-K VS. Freq
0
200
400
600
800
10
Ta=+25℃
VDD=4V
IDQ=50mA
9
Stabfact-K
8
1000
10
9
8
7
7
6
6
5
5
4
4
3
3
2
2
Stabfact-K
1
1
0
0
200
400
600
800
0
1000
f (MHz)
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
18 / 22
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
Suzhou Huatai Electronics
22.Test Circuit @VDD=4V, 400-470MHz
400-470MHz (@VDD=4.0V, Idq = 50mA，with feedback)
VDD
8mm
VGG
C9
C10
C11
L2
C8
C7
C6
8mm
4mm
C3
R2
3mm
L3
7mm
4mm
5mm
5mm
L1
C5
RF-out
R1
C4
3mm
RF-in
Q1
C1
C2
Note: The characteristic impedance of all microstrip lines: 50ohm
No.
Description
P/N
Manufacturer
C1,C5
220pF Chip Ceramic Capacitors
GRM1885C1H221JA01
muRata
C2,C4
15pF Chip Ceramic Capacitors
GRM1885C1H150JA01
muRata
C3
1nF Chip Ceramic Capacitors
GRM1885C1H102JA01
muRata
C6,C9
220pF Chip Ceramic Capacitors
GRM1885C1H221JA01
muRata
C7,C10
1nF Chip Ceramic Capacitors
GRM1885C1H102JA01
muRata
C8
4.7uF Chip Ceramic Capacitors
GRM32ER61H474KA12L
muRata
C11
10uF Chip Ceramic Capacitors
GRM32ER61H105KA12L
muRata
L1
6.8nH Chip Ceramic inductance
-
-
L2
D: 0.31mm, Inside: 1.5mm, 2 Turns
Enameled wire
-
L3
D: 0.3mm, Inside: 1.5mm, 8 Turns
Enameled wire
-
R1
100Ω Chip Resistors
-
-
R2
150 Ω Chip Resistors
-
-
Q1
RF LDMOS
HTU7G06S0P5P
Suzhou Huatai
Electronics Ltd.
PCB
Er=4.5
FR4
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
19 / 22
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
Suzhou Huatai Electronics
23.HTU7G06S0P5P S-Parameter Data (VDD=4V, Idq=50mA)
S11
S21
S12
S22
Freq
(MHz)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
(mag)
(ang)
300
350
400
430
470
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
0.954
0.890
0.846
0.829
0.810
0.803
0.793
0.783
0.773
0.764
0.759
0.757
0.758
0.754
0.753
0.749
0.743
0.740
0.743
0.747
0.751
0.753
0.754
0.754
0.756
0.756
-165.3
-176.8
173.7
168.6
162.5
158.1
151.0
144.0
137.5
131.4
125.7
120.1
114.5
109.0
103.6
98.2
93.2
88.5
84.0
79.2
74.2
69.2
64.2
59.3
54.6
49.6
9.687
8.132
6.981
6.440
5.840
5.465
4.922
4.473
4.069
3.726
3.448
3.217
3.017
2.830
2.657
2.493
2.342
2.217
2.123
2.040
1.963
1.889
1.816
1.745
1.697
1.655
-74.5
-113.8
-151.1
-172.8
158.7
137.4
102.3
67.4
32.9
-1.1
-34.7
-68.3
-102.0
-135.6
-169.2
157.4
124.4
91.8
59.3
26.3
-6.7
-39.8
-72.8
-105.7
-138.1
-171.2
0.088
0.086
0.083
0.082
0.082
0.081
0.080
0.079
0.077
0.076
0.075
0.074
0.074
0.072
0.071
0.070
0.068
0.068
0.068
0.067
0.066
0.066
0.065
0.064
0.064
0.064
-164.6
157.0
120.5
99.2
71.2
50.2
15.8
-18.9
-52.6
-86.3
-119.1
-152.0
174.3
141.3
108.2
75.6
43.2
11.0
-21.2
-54.0
-86.7
-119.2
-151.8
175.5
144.2
111.4
0.515
0.531
0.539
0.545
0.552
0.557
0.561
0.564
0.569
0.574
0.580
0.584
0.584
0.577
0.575
0.575
0.579
0.581
0.581
0.578
0.577
0.579
0.580
0.580
0.578
0.571
-96.1
-167.5
126.5
88.2
38.1
0.3
-61.5
-122.8
177.1
117.4
59.1
1.0
-57.4
-116.9
-176.5
124.3
66.8
10.2
-47.1
-105.2
-163.5
137.7
79.7
21.6
-34.9
-92.9
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
20 / 22
Suzhou Huatai Electronics
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
24.Recommended PCB Pad Layout
Symbol
Dimesions in Milimeters
Dimesions in Inches
Min.
Max.
Min.
Max.
A
1.400
1.600
0.055
0.063
b
0.320
0.520
0.013
0.020
b1
0.400
0.580
0.016
0.023
c
0.350
0.440
0.014
0.017
D
4.400
4.600
0.173
0.181
D1
1.550 REF.
0.061 REF.
D2
1.750 REF.
0.069 REF.
E
2.300
2.600
0.091
0.102
E1
3.940
4.250
0.155
0.167
E2
1.900 REF.
0.075 REF.
e
1.500 TYP.
0.060 TYP.
e1
3.000 TYP.
0.118 TYP.
L
θ
0.900
1.200
45°
0.035
0.047
45°
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
21 / 22
Suzhou Huatai Electronics
Document Number: HTU7G06S0P5P
Rev. 2.4, 05/2019
25. Disclaimer
Information in this document is believed to be accurate and reliable. However, Huatai Electronics does not give any
representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall
have no liability for the consequences of use of such information. Huatai Electronics takes no responsibility for the
content in this document if provided by an information source outside of Huatai Electronics or an authorized Huatai
Electronics distributor
In no event shall Huatai Electronics be liable for any indirect, incidental, punitive, special or consequential damages
(including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such damages are based on tort (including negligence),
warranty, breach of contract or any other legal theory.
Huatai Electronics products are not designed, authorized or warranted to be suitable for use in life support, life-critical
or safety-critical systems or equipment, nor in applications where failure or malfunction of an Huatai Electronics
product can reasonably be expected to result in personal injury, death or severe property or environmental damage.
Huatai Electronics and its distributors accept no liability for inclusion and/or use of Huatai Electronics products in
such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Huatai Electronics reserves the right to make changes without further notice to any products herein.
“Typical” parameters that may be provided in Huatai Electronics data sheets and/or specifications can and do vary in
different applications, and actual performance may vary over time. All operating parameters, including “typicals,”
must be validated for each customer application by customer’s technical experts. Huatai Electronics does not convey
any license under its patent rights nor the rights of others.
Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance.
For the full Terms and conditions of commercial sale or further details of the products contained therein, please
contact Huatai Electronics or an authorized Huatai Electronics distributor.
How to reach us:
http://www.huatai-elec.com/
© 2019 SUZHOU HUATAI ELETRONICS LTD. ALL RIGHTS RESERVED.
© 2019 Suzhou Huatai Electronics Ltd. All rights reserved.
Product Data Sheet
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