B772

B772 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLETOR 1 2 3. EMITTER 3 4.6 4.4 1.8 1.4 1.6 1.4 2.6 4.25 2.4 3.75 Features — B 0.8 MIN Low speed switching 0.44 0.37 Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ B 0.53 0.48 0.40 2x) 0.35 1.5 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol 0.13 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100μA ,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA,IC=0 -5 V Collector cut-off current ICBO VCB= -40V, IE=0 -1 μA Collector cut-off current ICEO VCE=-30V, IB=0 -10 μA Emitter cut-off current IEBO VEB=-6V, IC=0 -1 μA DC current gain hFE VCE= -2V, IC= -1A Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V Transition frequency 60 VCE= -5V, IC=-0.1A fT 400 80 f =10MHz MHz CLASSIFICATION OF hFE Rank R O Y GR Range 60-120 100-200 160-320 200-400 Revision:20170701-P1 ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com B772 SOT-89 Transistor(PNP) Typical Revision:20170701-P1 characteristics ht t p : // www.lgesem i .c o m mail:lge@lgesemi.com