SSC7002EGSD

SSC7002EGSD SSC7002EGSD Dual N-Channel Enhancement Mode MOSFET  Features VDS VGS 60V ±20V  Pin configuration RDSON Typ. ID ESD 0.3A 1KV Top view 2R@10V 3R@4V5  Description The SSC7002EGSD is dual N-channel enhancement MOS field effect transistor. With low on-resistance and fast switching speed. It is ideal for portable equipment with high saturation current capability and D1 G2 S2 S1 G1 D2 ESD protected.  Applications  Voltage controlled small signal switch  Direct Logic-Level Interface:  TTL/CMOS Display, Memories, Transistors, etc.  Ordering Information Device Package Shipping SSC7002EGSD SOT363 3000/Reel Marking www.afsemi.com Rev.1.0 SSC7002EGSD  Absolute Maximum Ratings(TA=25℃ unless otherwise noted) Symbol Parameter Ratings Unit VDSS Drain-to-Source Voltage 60 V VGSS Gate-to-Source Voltage ±20 V 0.3 A ID Continuous Drain Current a IDM Pulsed Drain Current b 0.8 A PD Power Dissipation c 0.45 W PDSM Power Dissipation a 0.25 W TJ Operation junction temperature -55 to 150 ℃ TSTG Storage temperature range -55 to 150 ℃  Thermal Resistance Ratings(TA=25℃ unless otherwise noted) Symbol Parameter RθJA Junction-to-Ambient Thermal Resistance RθJC Junction-to-Case Thermal Resistance Typical a Maximum 520 Unit ℃/W 290 Note: a. The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz.copper,in a still air environment with TA=25℃.The value in any given application depends on the user is specific board design. The current rating is based on the t≤ 10s thermal resistance rating. b. Repetitive rating, pulse width limited by junction temperature. c. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heat sinking is used. www.afsemi.com Rev.1.0 SSC7002EGSD  Electronics Characteristics(TA=25℃ unless otherwise noted) Symbol Parameter Test Conditions Min Typ. Max Unit Drain-Source V(BR)DSS VGS=0V , ID=250uA 60 VDS=VGS , ID=1mA 1 V Breakdown Voltage Gate Threshold VGS（th） 2.5 V Voltage Drain-Source VGS=10V , ID=0.3A 2 4 On-Resistance VGS=4.5V , ID=0.2A 3 6 RDS(on) R Zero Gate Voltage IDSS VDS=48V , VGS=0V 1 uA VGS=±20V , VDS=0V ±10 uA 1.5 V Drain Current Gate-Source leak IGSS current VSD Forward Voltage VGS=0V , IS=0.3A 0.8 GFS Transconductance VDS=5V , ID=0.3A 0.4 Ciss Input Capacitance Coss Output Capacitance S 40 VDS=10V , VGS=0V , f=1MHz 30 pF Reverse Transfer Crss 10 Capacitance Qg Total Gate charge Qgs Gate to Source charge 1.2 VGS=10V , VDS=30V , 0.21 nC ID=0.3A Qgd Gate to Drain charge 0.12 TD(ON) Turn-on delay time 7 Tr Rise time VGS=10V, 5 TD(OFF) Turn-off delay time VDS=50V, RG=6R,RL=250R 25 Tf Fall time ns www.afsemi.com 10 Rev.1.0 SSC7002EGSD  Typical Characteristics(TA=25℃ unless otherwise noted) www.afsemi.com Rev.1.0 SSC7002EGSD  Package Information www.afsemi.com Rev.1.0 SSC7002EGSD DISCLAIMER AFSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. AFSEMI DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICIENCE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THE GRAPHS PROVIDED IN THIS DOCUMENT ARE STATISTICAL SUMMARIES BASED ON A LIMITED NUMBER OF SAMPLES AND ARE PROVIDED FOR INFORMATIONAL PURPOSE ONLY. THE PERFORMANCE CHARACTERISTICS LISTED IN THEM ARE NOT TESTED OR GUARANTEED. IN SOME GRAPHS, THE DATA PRESENTED MAY BE OUTSIDE THE SPECIFIED OPERATING RANGE (E.G. OUTSIDE SPECIFIED POWER SUPPLY RANGE) AND THEREFORE OUTSIDE THE WARRANTED RANGE. www.afsemi.com Rev.1.0