SRRB751-40

Document：S09P10012 SRRB751-40 Silicon Schottky Barrier Diode Features Mechanical Characteristics  Small Surface Mounting Type  Package: DFN1006-2L  Ideal for Automated Placement  Lead Finish:Matte Tin  Ultrafast Reverse Recovery Time  Low Power Losses, High Efficiency  Case Material: “Green” Molding Compound.  Low Forward Voltage Drop  UL Flammability Classification Rating 94V-0  High Surge Capability RoHS Compliant  Moisture Sensitivity: Level 3 per J-STD-020   Tape Reel :10000pcs Appearance & Symbol Applications  High-Frequency Inverters  Switching Power Supply Marking Information L L=Marking Code Rev.X01 -1- www.salltech.com Document：S09P10012 SRRB751-40 Silicon Schottky Barrier Diode Absolute Maximum Ratings (T=25ºC, RH=45%-75%, unless otherwise noted) Parameters Symbol Value Unit Working Peak Reverse Voltage VRWM 40 V Repetitive Peak Reverse Voltage VRRM 40 V RMS Reverse Voltage VR(RMS) 28 V IO 30 mA IFSM 200 mA Pd 100 mW RθJA 1000 ℃/W TJ -55 ~ +125 ℃ TSTG -55 ~ +150 ℃ Average rectifierd forward current Peak Forward Surge Current@8.3ms Power Dissipation Thermal Resistance from Junction to Ambient Operating Junction temperature Storage Temperature Range Electrical Characteristics (T=25ºC, RH=45%-75%, unless otherwise noted) Parameter Symbol Test Condition Min Reverse breakdown voltage V(BR) IR=1mA 40 Reverse Leakage Current IR VR=30V 0.5 uA Forward Voltage VF IF = 1mA 0.37 V Capacitance between terminals CT VR=1V,f=1MHz Rev.X01 -2- Typ Max Unit V 2 pF www.salltech.com Document：S09P10012 SRRB751-40 Silicon Schottky Barrier Diode Typical Characteristics Rev.X01 -3- www.salltech.com Document：S09P10012 SRRB751-40 Silicon Schottky Barrier Diode Soldering parameters Pb-Free assembly (see as bellow) Reflow Condition Pre Heat +150℃ -Temperature Max(Ts(max)) +200℃ -Time (Min to Max) (ts) 60-180 secs. Average ramp up rate (Liquid us Temp (TL) to peak) 3℃/sec. Max Ts(max) to TL - Ramp-up Rate 3℃/sec. Max Reflow Rev.X01 -Temperature Min (Ts(min)) -Temperature(TL) (Liquid us) +217℃ -Temperature(tL) 60-150 secs. Peak Temp (Tp) +260(+0/-5)℃ Time within 5℃ of actual Peak Temp (tp) 30 secs. Max Ramp-down Rate 6℃/sec. Max Time 25℃ to Peak Temp (TP) 8 min. Max Do not exceed +260℃ -4- www.salltech.com Document：S09P10012 SRRB751-40 Silicon Schottky Barrier Diode Package mechanical data Symbol Dimension in Millimeters min max A 0.4 0.5 A1 0 0.05 D 0.9 1.1 E 0.55 0.65 e (0.65) b 0.2 0.3 L 0.34 0.55 Suggested Land Pattern Symbol Rev.X01 -5- Dimension in Millimeters typ X (0.5) Y (0.7) P (0.8) www.salltech.com Document：S09P10012 SRRB751-40 Silicon Schottky Barrier Diode Tape & reel specification - DFN1006-2L Symbol Dimension in Millimeters Tape D0 1.50+0.10/-0.00 E 1.75±0.10 F 3.50±0.10 P0 4.00±0.10 P1 2.00±0.10 P2 2.00±0.10 W 8.00+0.3/-0.1 D 178.0±2.00 D1 54.40±1.00 D2 13.00±1.00 W1 9.50±1.00 W2 12.30±1.00 Reel Contact information Jiangxi Salltech Microelectronics Technology Co.,Ltd. N0.699 Huangtang East Street,Ganjiang New District, Nanchang city,jiangxi province Tel: +86-791-83962891 Fax: +86-791-83962890 Rev.X01 -6- www.salltech.com