BZX584C5V6

Plastic-Encapsulate Diode PINNING ZENER DIODE PIN FEATURES • Planar Die Construction • 100mW Power Dissipation • Zener Voltages from 2.4 – 75V D ESCRIPTION 1 Cathode 2 Anode 2 1 Top View Simplified outline SOD- 5 2 3 and symbol Maximum Ratings(Ta=25 unless otherwise specified) Characteristic Forward Voltage @IF=10mA Power Dissipation Thermal Resistance, Junction to Ambient Air Operating and Storage Temperature Range Symbol Value 0.9 Unit V 150 mW R θJA 625 C/ w Tj ,TSTG -65 ~ +150 C VF PD 1 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Electrical Characteristics ( 25 ℃ unless otherwise specitied ) Maximum Maximum Zener Impedance Zener Voltage Range (Note 2) Type Type Number Code Reverse (Note 3) Current VZ@ IZT IZT Nom(V) Min(V) Max(V) (mA) ZZT@ IZT ZZK@ IZK (Ω) (mA) IR VR (uA) (V) BZX584C2V4 Z11 2.4 2.20 2.60 5 100 600 1.0 50 1.0 BZX584C2V7 Z12 2.7 2.5 2.9 5 100 600 1.0 20 1.0 BZX584C3V0 Z13 3.0 2.8 3.2 5 95 600 1.0 10 1.0 BZX584C3V3 Z14 3.3 3.1 3.5 5 95 600 1.0 5 1.0 BZX584C3V6 Z15 3.6 3.4 3.8 5 90 600 1.0 5 1.0 BZX584C3V9 Z16 3.9 3.7 4.1 5 90 600 1.0 3 1.0 BZX584C4V3 Z17 4.3 4.0 4.6 5 90 600 1.0 3 1.0 BZX584C4V7 Z1 4.7 4.4 5.0 5 80 500 1.0 3 2.0 BZX584C5V1 Z2 5.1 4.8 5.4 5 60 480 1.0 2 2.0 BZX584C5V6 Z3 5.6 5.2 6.0 5 40 400 1.0 1 2.0 BZX584C6V2 Z4 6.2 5.8 6.6 5 10 150 1.0 3 4.0 BZX584C6V8 Z5 6.8 6.4 7.2 5 15 80 1.0 2 4.0 BZX584C7V5 Z6 7.5 7.0 7.9 5 15 80 1.0 1 5.0 BZX584C8V2 Z7 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 BZX584C9V1 Z8 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 BZX584C10 Z9 10 9.4 10.6 5 20 150 1.0 0.2 7.0 BZX584C11 Y1 11 10.4 11.6 5 20 150 1.0 0.1 8.0 BZX584C12 Y2 12 11.4 12.7 5 25 150 1.0 0.1 8.0 BZX584C13 Y3 13 12.4 14.1 5 30 170 1.0 0.1 8.0 BZX584C15 Y4 15 13.8 15.6 5 30 200 1.0 0.1 10.5 BZX584C16 Y5 16 15.3 17.1 5 40 200 1.0 0.1 11.2 BZX584C18 Y6 18 16.8 19.1 5 45 225 1.0 0.1 12.6 BZX584C20 Y7 20 18.8 21.2 5 55 225 1.0 0.1 14.0 BZX584C22 Y8 22 20.8 23.3 5 55 250 1.0 0.1 15.4 BZX584C24 Y9 24 22.8 25.6 5 70 250 1.0 0.1 16.8 BZX584C27 Y10 27 25.1 28.9 2 80 300 0.5 0.1 18.9 BZX584C30 Y11 30 28.0 32.0 2 80 300 0.5 0.1 21.0 BZX584C33 Y12 33 31.0 35.0 2 80 325 0.5 0.1 23.1 BZX584C36 Y13 36 34.0 38.0 2 90 350 0.5 0.1 25.2 BZX584C39 Y14 39 37.0 41.0 2 130 350 0.5 0.1 27.3 BZX584C43 Y15 43 40 46 2.5 130 500 1 2 33 BZX584C47 Y16 47 44 50 2.5 150 500 1 2 36 BZX584C51 Y17 51 48 54 2.5 180 500 1 1 39 BZX584C56 Y18 56 52 60 2.5 180 500 1 1 43 BZX584C62 Y19 62 58 66 2.5 200 500 1 0.2 47 BZX584C68 Y20 68 64 72 2.5 250 500 1 0.2 52 BZX584C75 Y21 75 70 79 2.5 300 500 1 0.2 57 Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2.Tested with pulses, period=5ms,pulse width =300us. 3.f = 1KHZ 2 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. Breakdown characteristics Tj = constant (pulsed) mA 50 Tj=25o C 2V7 3V9 6V8 4V7 3V3 Iz 40 8V2 5V6 30 20 Test current Iz 5mA 10 0 0 1 2 3 4 5 6 7 8 9 10V Vz Breakdown characteristics Tj = constant (pulsed) mA 30 10 Tj=25oC 12 Iz 15 20 18 22 27 Test current Iz 5mA 10 33 0 0 10 20 30 40 V Vz 3 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd. PACKAGE OUTLINE Plastic surface mounted package SOD-523 Dimension in Millimeters Symbol Min Max A 0.60 0.70 A1 0 0.05 B 0.75 0.85 bp 0.25 0.40 C 0.09 0.15 E 1.15 1.25 HE 1.50 1.70 4 of 4 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.