BZT52CxxT
Zener Diode
»Features
◼
Low Zener Impedance
◼
Power Dissipation of 200mW
◼
High Stability and High Reliability
SOD-523
»General Description
◼
Case: molded plastic
◼
Polarity: Color band denotes cathode
◼
Package: SOD-523 Plastic Package
◼
Epoxy UL: 94V-0
» Maximum Ratings @T =25℃ unless otherwise noted
A
Parameters
Symbol
Value
Unit
Power Dissipation
Pd
200
mW
Forward Voltage @IF=10mA
Junction temperature
Vf
0.9
Tj
150
V
℃
Storage temperature range
Ts
-65-+150
℃
Revision 2018
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BZT52CxxT
»Electrical Characteristics @T =25℃ unless otherwise noted
A
Zener Voltage Range
Device
Vz@Izt
Izt
Maximum Zener
Impedance
Zzt
Zzk
Izk
@Izt
@Izk
Ω
mA
Maximum
Reverse Current
Typical
Temperature
coefficent @
IZTC=mV/℃
Test
Current
IZTC
IR
VR
uA
V
Min
Max
mA
1.0
50
1.0
-3.5
0
5
600
1.0
20
1.0
-3.5
0
5
100
600
1.0
10
1.0
-3.5
0
5
5
95
600
1.0
5
1.0
-3.5
0
5
3.8
5
90
600
1.0
5
1.0
-3.5
0
5
3.7
4.1
5
90
600
1.0
3
1.0
-3.5
0
5
4.3
4.0
4.6
5
90
600
1.0
3
1.0
-3.5
0
5
BZT52C4V7T
4.7
4.4
5.0
5
80
500
1.0
3
2.0
-3.5
0.2
5
BZT52C5V1T
5.1
4.8
5.4
5
60
480
1.0
2
2.0
-2.7
1.2
5
BZT52C5V6T
5.6
5.2
6.0
5
40
400
1.0
1
2.0
-2.0
2.5
5
BZT52C6V2T
6.2
5.8
6.6
5
10
150
1.0
3
4.0
0.4
3.7
5
BZT52C6V8T
6.8
6.4
7.2
5
15
80
1.0
2
4.0
1.2
4.5
5
BZT52C7V5T
7.5
7.0
7.9
5
15
80
1.0
1
5.0
2.5
5.3
5
BZT52C8V2T
8.2
7.7
8.7
5
15
80
1.0
0.7
5.0
3.2
6.2
5
BZT52C9V1T
9.1
8.5
9.6
5
15
100
1.0
0.5
6.0
3.8
7.0
5
BZT52C10T
10
9.4
10.6
5
20
150
1.0
0.2
7.0
4.5
8.0
5
BZT52C11T
11
10.4
11.6
5
20
150
1.0
0.1
8.0
5.4
9.0
5
BZT52C12T
12
11.4
12.7
5
25
150
1.0
0.1
8.0
6.0
10.0
5
BZT52C13T
13
12.4
14.1
5
30
170
1.0
0.1
8.0
7.0
11.0
5
BZT52C15T
15
13.8
15.6
5
30
200
1.0
0.1
10.5
9.2
13.0
5
BZT52C16T
16
15.3
17.1
5
40
200
1.0
0.1
11.2
10.4
14.0
5
BZT52C18T
18
16.8
19.1
5
45
225
1.0
0.1
12.6
12.4
16.0
5
BZT52C20T
20
18.8
21.2
5
55
225
1.0
0.1
14.0
14.4
18.0
5
BZT52C22T
22
20.8
23.3
5
55
250
1.0
0.1
15.4
16.4
20.0
5
BZT52C24T
24
22.8
25.6
5
70
250
1.0
0.1
16.8
18.4
22.0
5
BZT52C27T
27
25.1
28.9
2
80
300
0.5
0.1
18.9
21.4
25.3
2
BZT52C30T
30
28.0
32.0
2
80
300
0.5
0.1
21.0
24.4
29.4
2
BZT52C33T
33
31.0
35.0
2
80
325
0.5
0.1
23.1
27.4
33.4
2
BZT52C36T
36
34.0
38.0
2
90
350
0.5
0.1
25.2
30.4
37.4
2
BZT52C39T
39
37.0
41.0
2
130
350
0.5
0.1
27.3
33.4
41.2
2
BZT52C43T
43
40.0
46.0
2
100
700
1.0
0.1
32.0
10.0
12.0
5
BZT52C47T
47
44.0
50.0
2
100
750
1.0
0.1
35.0
10.0
12.0
5
BZT52C51T
51
48.0
54.0
2
100
750
1.0
0.1
38.0
10.0
12.0
5
Nom(V)
Min(V)
Max(V)
mA
BZT52C2V4T
2.4
2.2
2.6
5
100
600
BZT52C2V7T
2.7
2.5
2.9
5
100
BZT52C3V0T
3.0
2.8
3.2
5
BZT52C3V3T
3.3
3.1
3.5
BZT52C3V6T
3.6
3.4
BZT52C3V9T
3.9
BZT52C4V3T
Revision 2018
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BZT52CxxT
»Typical Performance Characteristics((TJ = 25 °C, unless otherwise noted))
1000
TJ = 25C
IZ(AC) = 0.1 Z(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
Z ZT , DYNAMIC IMPEDANCE ( )
1000
100
100
IZ = 1 mA
5 mA
10
150C
10
75C
3.0
10
VZ, NOMINAL ZENER VOLTAGE
80
0.4
0.5
0C
0.6
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
1.1
1.2
60
70
Figure 2. Typical Forward Voltage
Figure 1. Effect of Zener Voltage on
Zener Impedance
1000
1000
TA = 25C
0 V BIAS
100
100
IR, LEAKAGE CURRENT
( A)
C, CAPACITANCE (pF)
25C
1.0
1.0
1 V BIAS
10
1.0
+150C
0.1
BIAS AT
50% OF VZ NOM
10
0.01
+25C
0.001
–55C
0.0001
0.00001
1.0
4.0
10
VZ, NOMINAL ZENER VOLTAGE (V)
70
0
Figure 3. Typical Capacitance
Revision 2018
10
20
30
40
50
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 4. Typical Leakage Current
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BZT52CxxT
100
100
TA = 25C
IZ , ZENER CURRENT (mA)
IZ, ZENER CURRENT (mA)
TA = 25C
10
1.0
0.1
0.01
10
1
0.1
0.01
0
2.0
4.0
6.0
8.0
VZ, ZENER VOLTAGE (V)
10
12
Figure 5. Zener Voltage versus Zener Current
(VZ Up to 12 V)
10
30
50
70
VZ, ZENER VOLTAGE (V)
90
Figure 6. Zener Voltage versus Zener Current
(12 V to 75 V)
POWER DISSIPATION (%)
100
80
60
40
20
0
0
25
50
75
100
TEMPERATURE (C)
125
150
Figure 7. Steady State Power Derating
Revision 2018
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BZT52CxxT
»Package Information
SOD-523
A
Millimeters
B
D
1
2
C
K
J
Revision 2018
Inches
DIM
Min
Max
Min
Max
A
1.10
1.30
0.043
0.051
B
0.70
0.90
0.028
0.035
C
0.50
0.70
0.020
0.028
D
0.25
0.35
0.010
0.014
J
0.07
0.20
K
0.15
0.25
0.006
0.010
S
1.50
1.70
0.059
0.067
0.0028 0.0079
S
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