SD103AX

SD103AX Features Schottky Barrier Diode Package • Low forward voltage drop • Guard Ring Construction for Transient Protection. • Negligible Reverse Recovery Time. • Low Reverse Capacitance. General Description • Case: molded plastic • Polarity: Color band denotes cathode • Package: SOD-523 Plastic Package Marking Ordering information Order code Package Marking Base qty Delivery mode SD103AX SOD-523 S4 3K Tape and reel Maximum Ratings (@TA =25◦ C unless otherwise noted) Symbol Parameter VRM Non-repetitive Peak Reverse Voltage VRRM Peak Repetitive Peak Reverse Voltage VRWM Working Peak Reverse Voltage Value Unit 40 V VR DC Blocking Voltage VR(RMS) RMS Reverse Voltage 28 V IFM Forward Continuous Current 350 mA IFSM Non-repetitive Peak Forward Surge Current @8.3mS 2.0 A PD Power Dissipation 150 RθJA Typical thermal resistance 667 Tj Operating junction Temperature Range -40 to +125 TSTG Storage temperature Range -50 to +150 mW ◦ C/ W ◦ ◦ C C BORN SEMICONDUCTOR , INC. ALL RIGHT RESERVED Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information. Revision: 2022-Jan-1-A Page:1 SD103AX Schottky Barrier Diode ◦ Electrical Characteristics( @TA =25 C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit V(BR) Reverse breakdown voltage IR =1mA 40 – – V VR =30V – – 5 IR Reverse voltage leakage current VR =20V – – 2 VR =10V – – 1 IF =1mA – 0.27 – IF =5mA – 0.32 – IF =20mA – – 0.37 IF =200mA – – 0.6 VR = 0V, f=1MHZ – 50 – pF – 10 – nS VF Forward voltage Cj Type junction capacitance Trr Reverse recovery time IF =IR = 200mA, Irr =0.1XIR ,RL =100Ω μA V BORN SEMICONDUCTOR , INC. ALL RIGHT RESERVED Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information. Revision: 2022-Jan-1-A Page:2 SD103AX Schottky Barrier Diode ◦ Typical Performance Characteristics(TJ = 25 C, unless otherwise noted) Figure 1: Forward Characteristics Figure 2: Reverse Characteristics Figure 3: Capacitance Characteristics Figure 4: Power Derating Curve BORN SEMICONDUCTOR , INC. ALL RIGHT RESERVED Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information. Revision: 2022-Jan-1-A Page:3 SD103AX Schottky Barrier Diode Outline Drawing - SOD-523 SYMBOL MILLIMETER INCHES MIN. MAX. MIN. MAX. A 0.50 0.70 0.020 0.028 b 0.25 0.35 0.010 0.014 C 0.07 0.20 0.0028 0.0079 D 1.10 1.30 0.043 0.051 E 0.70 0.90 0.028 0.035 HE 1.50 1.70 0.059 0.067 L 0.15 0.25 0.006 0.010 Packaging Tape - SOD-523 SYMBOL MILLIMETER A0 0.50±0.10 A1 1.00±0.10 B0 1.30±0.10 B1 1.80±0.10 d0 1.55±0.10 d1 0.50±0.05 E 1.75±0.10 F 3.50±0.10 K0 0.65±0.10 P 2.00±0.10 P0 4.00±0.10 P1 2.00±0.10 W 8.00±0.30 T 0.2 ±0.05 SYMBOL MILLIMETER A 177.8±0.2 B 2.7±0.2 C 13.5±0.2 D 9.6±0.3 E 54.5±0.2 F 12.3±0.3 Packaging Reel T1 1.0±0.2 Quantity 3000PCS BORN SEMICONDUCTOR , INC. ALL RIGHT RESERVED Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information. Revision: 2022-Jan-1-A Page:4