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BAS716

BAS716

  • 厂商:

    BORN(伯恩)

  • 封装:

    SOD523(SC-79)

  • 描述:

  • 数据手册
  • 价格&库存
BAS716 数据手册
BAS716 Features Schottky Barrier Diode Package • Small Package. • Low Reverse Current. • Fast Switching Speed. • Surface Mount Package Ideally Suited for Automatic Insertion. General Description • Case: molded plastic • Polarity: Color band denotes cathode • Package: SOD-523 Plastic Package Marking Ordering information Order code BAS716 Package Marking SOD-523 S1 . Base qty Delivery mode 3K Tape and reel Maximum Ratings (@TA =25◦ C unless otherwise noted) Symbol Parameter Value Unit VRM Non-Repetitive Peak Reverse Voltage 100 V VRRM Peak Repetitive Peak Reverse Voltage VRWM Working Peak Reverse Voltage 75 V VR(RMS) RMS Reverse Voltage 53 V IO Average Rectified Output Current 0.2 A IFSM Non-repetitive Peak Forward Surge Current @8.3mS 1 A PD Power Dissipation 225 RθJA Thermal Resistance From Junction To Ambient 556 Tj Operating junction Temperature Range -40 to +125 TSTG Storage temperature Range -55 to +150 mW ◦ C/ W ◦ ◦ C C BORN SEMICONDUCTOR , INC. ALL RIGHT RESERVED Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information. Revision: 2022-Jan-1-A Page:1 BAS716 Schottky Barrier Diode ◦ Electrical Characteristics( @TA =25 C unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Unit V(BR) Reverse breakdown voltage IR =100μA 75 – – V IR IR Reverse voltage leakage current VF Forward voltage Ctot Total capacitance Trr Reverse recovery time VR =75V – – 5 VR =100V – – 80 IF =1mA – – 0.9 IF =10mA – – 1 IF =50mA – – 1.1 IF =150mA – – 1.25 VR =0V, f=1MHZ – 2 – pF – – 3 nS IF =IR = 10mA, Irr =0.1XIR nA V BORN SEMICONDUCTOR , INC. ALL RIGHT RESERVED Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information. Revision: 2022-Jan-1-A Page:2 BAS716 Schottky Barrier Diode ◦ Typical Performance Characteristics(TJ = 25 C, unless otherwise noted) Figure 1: Forward Characteristics Figure 2: Reverse Characteristics Figure 3: Capacitance Characteristics Figure 4: Power Derating Curve BORN SEMICONDUCTOR , INC. ALL RIGHT RESERVED Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information. Revision: 2022-Jan-1-A Page:3 BAS716 Schottky Barrier Diode Outline Drawing - SOD-523 SYMBOL MILLIMETER INCHES MIN. MAX. MIN. MAX. A 0.50 0.70 0.020 0.028 b 0.25 0.35 0.010 0.014 C 0.07 0.20 0.0028 0.0079 D 1.10 1.30 0.043 0.051 E 0.70 0.90 0.028 0.035 HE 1.50 1.70 0.059 0.067 L 0.15 0.25 0.006 0.010 Packaging Tape - SOD-523 SYMBOL MILLIMETER A0 0.50±0.10 A1 1.00±0.10 B0 1.30±0.10 B1 1.80±0.10 d0 1.55±0.10 d1 0.50±0.05 E 1.75±0.10 F 3.50±0.10 K0 0.65±0.10 P 2.00±0.10 P0 4.00±0.10 P1 2.00±0.10 W 8.00±0.30 T 0.2 ±0.05 SYMBOL MILLIMETER A 177.8±0.2 B 2.7±0.2 C 13.5±0.2 D 9.6±0.3 E 54.5±0.2 F 12.3±0.3 Packaging Reel T1 1.0±0.2 Quantity 3000PCS BORN SEMICONDUCTOR , INC. ALL RIGHT RESERVED Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information. Revision: 2022-Jan-1-A Page:4
BAS716 价格&库存

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BAS716
    •  国内价格
    • 20+0.16281
    • 200+0.13006
    • 600+0.11178
    • 3000+0.10090
    • 9000+0.09137
    • 21000+0.08632

    库存:5873