BAS716
Features
Schottky Barrier Diode
Package
• Small Package.
• Low Reverse Current.
• Fast Switching Speed.
• Surface Mount Package Ideally Suited for Automatic
Insertion.
General Description
• Case: molded plastic
• Polarity: Color band denotes cathode
• Package: SOD-523 Plastic Package
Marking
Ordering information
Order code
BAS716
Package
Marking
SOD-523
S1
.
Base qty
Delivery mode
3K
Tape and reel
Maximum Ratings (@TA =25◦ C unless otherwise noted)
Symbol
Parameter
Value
Unit
VRM
Non-Repetitive Peak Reverse Voltage
100
V
VRRM
Peak Repetitive Peak Reverse Voltage
VRWM
Working Peak Reverse Voltage
75
V
VR(RMS)
RMS Reverse Voltage
53
V
IO
Average Rectified Output Current
0.2
A
IFSM
Non-repetitive Peak Forward Surge Current @8.3mS
1
A
PD
Power Dissipation
225
RθJA
Thermal Resistance From Junction To Ambient
556
Tj
Operating junction Temperature Range
-40 to +125
TSTG
Storage temperature Range
-55 to +150
mW
◦
C/ W
◦
◦
C
C
BORN SEMICONDUCTOR , INC. ALL
RIGHT RESERVED
Specifications are subject to change without notice.
Please refer to http://www.born-tw.com for current information.
Revision: 2022-Jan-1-A
Page:1
BAS716
Schottky Barrier Diode
◦
Electrical Characteristics( @TA =25 C unless otherwise noted)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
V(BR)
Reverse breakdown voltage
IR =100μA
75
–
–
V
IR
IR
Reverse voltage leakage current
VF
Forward voltage
Ctot
Total capacitance
Trr
Reverse recovery time
VR =75V
–
–
5
VR =100V
–
–
80
IF =1mA
–
–
0.9
IF =10mA
–
–
1
IF =50mA
–
–
1.1
IF =150mA
–
–
1.25
VR =0V, f=1MHZ
–
2
–
pF
–
–
3
nS
IF =IR = 10mA,
Irr =0.1XIR
nA
V
BORN SEMICONDUCTOR , INC. ALL
RIGHT RESERVED
Specifications are subject to change without notice.
Please refer to http://www.born-tw.com for current information.
Revision: 2022-Jan-1-A
Page:2
BAS716
Schottky Barrier Diode
◦
Typical Performance Characteristics(TJ = 25 C, unless otherwise noted)
Figure 1: Forward Characteristics
Figure 2: Reverse Characteristics
Figure 3: Capacitance Characteristics
Figure 4: Power Derating Curve
BORN SEMICONDUCTOR , INC. ALL
RIGHT RESERVED
Specifications are subject to change without notice.
Please refer to http://www.born-tw.com for current information.
Revision: 2022-Jan-1-A
Page:3
BAS716
Schottky Barrier Diode
Outline Drawing - SOD-523
SYMBOL
MILLIMETER
INCHES
MIN.
MAX.
MIN.
MAX.
A
0.50
0.70
0.020
0.028
b
0.25
0.35
0.010
0.014
C
0.07
0.20
0.0028
0.0079
D
1.10
1.30
0.043
0.051
E
0.70
0.90
0.028
0.035
HE
1.50
1.70
0.059
0.067
L
0.15
0.25
0.006
0.010
Packaging Tape - SOD-523
SYMBOL
MILLIMETER
A0
0.50±0.10
A1
1.00±0.10
B0
1.30±0.10
B1
1.80±0.10
d0
1.55±0.10
d1
0.50±0.05
E
1.75±0.10
F
3.50±0.10
K0
0.65±0.10
P
2.00±0.10
P0
4.00±0.10
P1
2.00±0.10
W
8.00±0.30
T
0.2 ±0.05
SYMBOL
MILLIMETER
A
177.8±0.2
B
2.7±0.2
C
13.5±0.2
D
9.6±0.3
E
54.5±0.2
F
12.3±0.3
Packaging Reel
T1
1.0±0.2
Quantity
3000PCS
BORN SEMICONDUCTOR , INC. ALL
RIGHT RESERVED
Specifications are subject to change without notice.
Please refer to http://www.born-tw.com for current information.
Revision: 2022-Jan-1-A
Page:4
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