1N5819WT

1N5819WT S4 Plastic-Encapsulate Schottky Barrier Diode ◇ ◇ ◇ ◇ ◇ ◇ Datasheet Low Forward Voltage Drop SOD523 Micro SMD Package RoHS Compliant / Green EMC Matte Tin (Sn) Lead Finish Cathode Band / Device Marking Surface Mount Package Ideally Suited For Automatic Insertion Maximum Ratings （Ta = 25 ℃） Symbol Parameter Value Units VRRM Peak Repetive Reverse Voltage 40 V VRWM Working Peak Reverse Voltage 40 V VR DC Blocking Voltage 40 V VR(RMS) RMS Reverse Voltage 28 V IFM Forward Continuous Current 350 mA IFSM Non-Repetitive Peak Forward Surge Current 2.0 A ( @t=8..3ms ) PD Power Dissipation 200 mW TJ Junction Temperature 125 ℃ TSTG Storage Temperature -55 to +150 ℃ RθJA Thermal Resistance From Junction To Ambient 625 ℃/W Electrical Characteristics （Ta = 25 ℃） Symbol Parameter VBR Reverse Voltage VF Forward Voltage IR Reverse current CT Capacitance trr Typical Reverse Recovery Time www.yongyutai.com Conditions IF = 100uA Min Typ Max Units V 40 IF = 20mA 0.37 V IF = 200mA 0.60 V VR= 30V 5 μA VR = 0V, f = 1MHz 50 pF IF = IR =200mA, Irr=0.1*IR，RL = 100Ω 1 10 ns Rev.-2.0 1N5819WT S4 Plastic-Encapsulate Schottky Barrier Diode Datasheet Curve Characteristics Typical Instantaneous Forward Characteristics Typical Reverse Leakage Characteristics Power Derating Curve www.yongyutai.com 2 Rev.-2.0 1N5819WT S4 Plastic-Encapsulate Schottky Barrier Diode Datasheet Package Dimensions Package outline : SOD-523 Unit A A1 b c D E E1 E2 L Max. 0.70 0.70 0.35 0.15 0.85 1.30 1.70 0.25 0.07 Min. 0.51 0.50 0.25 0.08 0.75 1.10 1.50 0.15 0.01 θ 7° REF. Note: 1. Halogen free,EMC 2. Pb free solder 3. Lead thickness includes solder plating 4. Lead frame: Cu 5. Other Tolerance: ±0.05 6. Dimensions are exclusive of Burrs,Mold Flash and Tie Bar extrusions 7. Unit: mm SOD523Package Outline Land Pattern Recommendation www.yongyutai.com 3 Rev.-2.0