SEB520S-30

SHANGHAI Jan 2008 MICROELECTRONICS CO., LTD. SEB520S-30 Schottky barrier diode Revision:A External Dimensions Features z Ultra small mold type. (EMD2) z High reliability. z Low Ir Applications ● Low current rectification Construction ● Silicon epitaxial planer Absolute maximum ratings (Ta=25℃) Parameter Symbol Limits Unit DC reverse voltage VR 30 V Mean rectifying current IO 200 mA IFSM 1 A Junction temperature Tj 150 ℃ Storage temperature Tstg -40 ～ +125 ℃ Peak forward surge current* Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF — — 0.6 V IF =200mA Reverse current IR — — 1 uA VR =10V SEB520S-30 z Please pay attention to static electricity when handling. The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronics Co., Ltd. 2.