BZX584C5V1

Zener Diode 稳压二极管 Zener Diodes / DATA SHEET BZX584C Series ◇ ◇ ◇ ◇ ◇ ◇ Constant Voltage control Wide Voltage Range Selection 2.4V to 75V SOD523 Thin SMD package RoHS compliant / Green EMC Matte Tin (Sn) Lead finish Cathode Band / Device marking Refer to table list Maximum Ratings （Ta = 25 ℃） Symbol Parameter Value Units PD Power Dissipation 200 mW TJ Junction Temperature 150 ℃ TSTG Storage Temperature -55 to +150 ℃ PD/VZ mA IZM Maximum Regulator Current Electrical Characteristics （Ta = 25 ℃） Type Device Number Marking BZX584C2V4 Z11 BZX584C2V7 Vz (V) Nom(V) *1 IZT ZZT@IZT mA ZZK@IZK Ω Izk IR VR (mA) (uA) (V) Min(V) Max(V) 2.4 2.20 2.60 5 100 600 1.0 50 1.0 Z12 2.7 2.5 2.9 5 100 600 1.0 20 1.0 BZX584C3V0 Z13 3.0 2.8 3.2 5 95 600 1.0 10 1.0 BZX584C3V3 Z14 3.3 3.1 3.5 5 95 600 1.0 5 1.0 BZX584C3V6 Z15 3.6 3.4 3.8 5 90 600 1.0 5 1.0 BZX584C3V9 Z16 3.9 3.7 4.1 5 90 600 1.0 3 1.0 BZX584C4V3 Z17 4.3 4.0 4.6 5 90 600 1.0 3 1.0 BZX584C4V7 Z1 4.7 4.4 5.0 5 80 500 1.0 3 2.0 BZX584C5V1 Z2 5.1 4.8 5.4 5 60 480 1.0 2 2.0 BZX584C5V6 Z3 5.6 5.2 6.0 5 40 400 1.0 1 2.0 BZX584C6V2 Z4 6.2 5.8 6.6 5 10 150 1.0 3 4.0 Continued next page Document Number:814028 Revision:18-Oct-19 安徽安美 半导体有限公司 Ａｎ ｈｕｉ Ａｎｍｅｉ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｃｏ．，Ｌｔｄ． www.amsemi.com.cn 1 Zener Diode 稳压二极管 Electrical Characteristics （Ta = 25 ℃） *1 *1 IZT ZZT@IZT Type Device Number Marking BZX584C6V8 Z5 6.8 6.4 7.2 5 15 BZX584C7V5 Z6 7.5 7.0 7.9 5 BZX584C8V2 Z7 8.2 7.7 8.7 BZX584C9V1 Z8 9.1 8.5 BZX584C10 Z9 10.0 BZX584C11 Y1 BZX584C12 ZZK@IZK Izk IR VR (mA) (uA) (V) 80 1.0 2 4.0 15 80 1.0 1 5.0 5 15 80 1.0 0.7 5.0 9.6 5 15 100 1.0 0.5 6.0 9.4 10.6 5 20 150 1.0 0.2 7.0 11.0 10.4 11.6 5 20 150 1.0 0.1 8.0 Y2 12.0 11.40 12.7 5 25 150 1.0 0.1 8.0 BZX584C13 Y3 13.0 12.40 14.10 5 30 170 1.0 0.1 8.0 BZX584C15 Y4 15.0 13.8 15.6 5 30 200 1.0 0.1 10.5 BZX584C16 Y5 16.0 15.3 17.1 5 40 200 1.0 0.1 11.2 BZX584C18 Y6 18.0 16.8 19.1 5 45 225 1.0 0.1 12.6 BZX584C20 Y7 20.0 18.8 21.2 5 55 225 1.0 0.1 14.0 BZX584C22 Y8 22.0 20.8 23.3 5 55 250 1.0 0.1 15.4 BZX584C24 Y9 24.0 22.80 25.6 5 70 250 1.0 0.1 16.8 BZX584C27 Y10 27.0 25.1 28.9 2 80 300 0.5 0.1 18.9 BZX584C30 Y11 30.0 28.0 32.0 2 80 300 0.5 0.1 21.0 BZX584C33 Y12 33.0 31.0 35.0 2 80 325 0.5 0.1 23.1 BZX584C36 Y13 36.0 34.0 38.0 2 90 350 0.5 0.1 25.2 BZX584C39 Y14 39.0 37.0 41.0 2 130 350 0.5 0.1 27.3 BZX584C43 Y15 43.0 40.0 46.0 2 100 700 1 0.1 32 BZX584C47 V1 47.0 44.65 49.35 2 170 1000 0.25 0.1 36 BZX584C51 V2 51 48.45 53.55 2 180 1300 0.25 0.1 39 BZX584C56 V3 56 53.20 58.80 2 200 1400 0.25 0.1 43 BZX584C62 V4 62 58.90 65.10 2 225 1400 0.25 0.1 47 BZX584C68 V5 68 64.60 71.40 2 240 1600 0.25 0.1 52 BZX584C75 V6 75 71.25 78.75 2 265 1700 0.25 0.1 56 Vz (V) Nom(V) Min(V) Max(V) mA Ω Pulse width = 10 ms Document Number:814028 Revision:18-Oct-19 安徽安美 半导体有限公司 Ａｎ ｈｕｉ Ａｎｍｅｉ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｃｏ．，Ｌｔｄ． www.amsemi.com.cn 2 Zener Diode 稳压二极管 Typical Characteristics ZENER BREAKDOWN CHARACTERISTIC TYPICAL FORWARD VOLTAGE ZENER BREAKDOWN CHARACTERISTICS Effect of Zener Voltage on Zener Impedance Typical Capacitance Document Number:814028 Revision:18-Oct-19 Typical Leakage Current 安徽安美 半导体有限公司 Ａｎ ｈｕｉ Ａｎｍｅｉ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｃｏ．，Ｌｔｄ． www.amsemi.com.cn 3 Zener Diode 稳压二极管 Power Derating Curve Ordering Information Device Package Shipping BZX584C Series SOD523 Tape & Reel 8000pcs /7” Reel Tape wide Emboss pitch Tape specification 8 mm 4 mm Conductive Notes Package Dimensions Document Number:814028 Revision:18-Oct-19 安徽安美 半导体有限公司 Ａｎ ｈｕｉ Ａｎｍｅｉ Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｃｏ．，Ｌｔｄ． www.amsemi.com.cn 4