RB751S-40

RB751S-40 SOD-523 Plastic-Encapsulate Schottky Barrier Diode ◆ Features Small surface mounting type Low turn-on voltage. Fast Switching And High reliability. ◆ Absolute Maximum Ratings(Ta=25℃) Symbol Parameter Value Unit VRM Peak Reverse Voltage 40 V VR DC Reverse Voltage 40 V IO Mean rectifying current 30 mA IFSM Non-repetitive Peak Forward Surge Current@8.3mS 200 mA Pd Power Dissipation 150 mW RΘJA Thermal Resistance From Junction To Ambient 667 ℃/W TJ Operation Junction Temperature Range -40~+125 ℃ TSTG Storage Temperature Range -55~+150 ℃ ◆ Electrical Characteristics (Ta=25℃ unless otherwise specified) Typ Symbol Parameter Test conditions Min Max Unit V(BR) Reverse breakdown voltage IR=1mA 40 IR Reverse current VR=30V 0.01 0.5 µA VF Forward voltage IF=1mA 0.20 0.37 V CT Capacitance between terminals VR=1V, f=1.0MHz 0.5 10 pF V 2 ◆ Marking 深圳市深微半导体有限公司（SHENZHEN SHENWEI SEMICON co.,LTD） 2022.3 RB751S-40 SOD-523 Plastic-Encapsulate Schottky Barrier Diode ◆ TypicalCharacteristics ◆ SOD-523 Package Outline Dimensions ◆ Packaging SPEC. Units Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box 3,000 15 45,000 4 180,000 Reel 7〞×8 Dimension (unit：mm3 ) Inner Box Outer Box 190×190×190 400×400×210 深圳市深微半导体有限公司（SHENZHEN SHENWEI SEMICON co.,LTD） 2022.3