MM5Z4V3

BSS123W N-Channel Enhancement Mode MOSFET Feature 3 Super High dense cell design for extremely low RDS(ON). Reliable and Rugged. Low Threshold Voltage (1.5V—2.5 V)Make it Ideal for Low Voltage Applications. ESD protected. SOT-323 for Surface Mount Package.      1 2 Applications ● ● Power Management in DC/DC Converters Portable and Battery-powered Products. Absolute Maximum Ratings Parameter TA=25℃ Symbol Limit Units Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V ID 0.17 A Drain Current-Continuous z Unless Otherwise noted Electrical Characteristics ( Ta = 25 °C Unless Otherwise Noted ) Symbol Parameter Conditions Min Typ Max Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, IDS = 250 μA 100 - - V VGS(th) Gate Threshold Voltage VDS = VGS, IDS = 250 μA 1.5 2.0 2.5 V IDSS Drain Leakage Current - - 1 μA - - 30 μA IGSS Gate Leakage Current VGS = ±20 V, VDS = 0 V - - ± 10 μA VGS = 10 V, IDS = 0.25 A - 3.5 6 VGS = 4.5 V, IDS = 0.2 A - 4.5 9 ISD = 0.4 A, VGS = 0 V - 0.91 1.3 RDS(ON) a On-State Resistance VDS = 80 V, VGS = 0V TJ = 85 ℃ Ω Diode Characteristics VSD REV.08 Diode Forward Voltage 1 of 2 V BSS123W Symbol A A1 A2 b c D E E1 e e1 L L1 θ REV.08 Dimensions In Millimeters Min. Max. 0.900 1.100 0.000 0.100 0.900 1.000 0.200 0.400 0.080 0.150 2.000 2.200 1.150 1.350 2.150 2.450 0.650 TYP. 1.200 1.400 0.525 REF. 0.260 0.460 0° 8° 2 of 2 Dimensions In Inches Min. Max. 0.035 0.043 0.000 0.004 0.035 0.039 0.008 0.016 0.003 0.006 0.079 0.087 0.045 0.053 0.085 0.096 0.026 TYP. 0.047 0.055 0.021 REF. 0.010 0.018 0° 8°