BZX584C4V7

BZX584C2V4-BZX584C43 Product specification BZX584C2V4-BZX584C43 Reference News FEATURES  Planar Die Construction  150mW Power Dissipation  Zener Voltages from 2.4V - 39V  Ultra-Small Surface Mount Package Power PACKAGE OUTLINE Dissipation PIN CONFIGURATION SOD-523 Maximum Ratings(Ta=25 ℃ unless otherwise specified) Characteristic Symbol Value Unit VF 0.9 V Power Dissipation PD 150 mW Thermal Resistance from Junction to Ambient Rθ JA 833 ℃/W Junction Temperature Tj 150 ℃ Storage Temperature Tstg Forward Voltage @IF=10mA Copyright© Msksemi Incorporated -55~+150 ℃ www.msksemi.com BZX584C2V4-BZX584C43 ELECTRICAL CHARACTERISTICS T a =25 unless otherwise specified Maximum Zener Impedance Zener Voltage Range (Note 2) Type Type Number Code VZ@ IZT Maximum Typical temperature Reverse coefficient Current @ IZT (Note 3) IZT Nom(V) Min(V) Max(V) (mA) ZZT@ IZT ZZK@ IZK (Ω) mV/°C IR VR (mA) (μA) (V) Min Max BZX584C2V4 Z11 2.4 2.20 2.60 5 100 600 1.0 50 1.0 -3.5 0 BZX584C2V7 Z12 2.7 2.5 2.9 5 100 600 1.0 20 1.0 -3.5 0 BZX584C3V0 Z13 3.0 2.8 3.2 5 95 600 1.0 10 1.0 -3.5 0 BZX584C3V3 Z14 3.3 3.1 3.5 5 95 600 1.0 5 1.0 -3.5 0 BZX584C3V6 Z15 3.6 3.4 3.8 5 90 600 1.0 5 1.0 -3.5 0 BZX584C3V9 Z16 3.9 3.7 4.1 5 90 600 1.0 3 1.0 -3.5 0 BZX584C4V3 Z17 4.3 4.0 4.6 5 90 600 1.0 3 1.0 -3.5 0 BZX584C4V7 Z1 4.7 4.4 5.0 5 80 500 1.0 3 2.0 -3.5 0.2 BZX584C5V1 Z2 5.1 4.8 5.4 5 60 480 1.0 2 2.0 -2.7 1.2 BZX584C5V6 Z3 5.6 5.2 6.0 5 40 400 1.0 1 2.0 -2.0 2.5 BZX584C6V2 Z4 6.2 5.8 6.6 5 10 150 1.0 3 4.0 0.4 3.7 BZX584C6V8 Z5 6.8 6.4 7.2 5 15 80 1.0 2 4.0 1.2 4.5 BZX584C7V5 Z6 7.5 7.0 7.9 5 15 80 1.0 1 5.0 2.5 5.3 BZX584C8V2 Z7 8.2 7.7 8.7 5 15 80 1.0 0.7 5.0 3.2 6.2 BZX584C9V1 Z8 9.1 8.5 9.6 5 15 100 1.0 0.5 6.0 3.8 7.0 BZX584C10 Z9 10 9.4 10.6 5 20 150 1.0 0.2 7.0 4.5 8.0 BZX584C11 Y1 11 10.4 11.6 5 20 150 1.0 0.1 8.0 5.4 9.0 BZX584C12 Y2 12 11.4 12.7 5 25 150 1.0 0.1 8.0 6.0 10.0 BZX584C13 Y3 13 12.4 14.1 5 30 170 1.0 0.1 8.0 7.0 11.0 BZX584C15 Y4 15 13.8 15.6 5 30 200 1.0 0.1 10.5 9.2 13.0 BZX584C16 Y5 16 15.3 17.1 5 40 200 1.0 0.1 11.2 10.4 14.0 BZX584C18 Y6 18 16.8 19.1 5 45 225 1.0 0.1 12.6 12.4 16.0 BZX584C20 Y7 20 18.8 21.2 5 55 225 1.0 0.1 14.0 14.4 18.0 BZX584C22 Y8 22 20.8 23.3 5 55 250 1.0 0.1 15.4 16.4 20.0 BZX584C24 Y9 24 22.8 25.6 5 70 250 1.0 0.1 16.8 18.4 22.0 BZX584C27 Y10 27 25.1 28.9 2 80 300 0.5 0.1 18.9 21.4 25.3 BZX584C30 Y11 30 28.0 32.0 2 80 300 0.5 0.1 21.0 24.4 29.4 BZX584C33 Y12 33 31.0 35.0 2 80 325 0.5 0.1 23.1 27.4 33.4 BZX584C36 Y13 36 34.0 38.0 2 90 350 0.5 0.1 25.2 30.4 37.4 BZX584C39 Y14 39 37.0 41.0 2 130 350 0.5 0.1 27.3 33.4 41.2 BZX584C43 Y15 43 40.0 46.0 2 100 700 1 0.1 32 10 12 Notes: 1. Valid provided that device terminals are kept at ambient temperature. 2.Tested with pulses, period=5ms,pulse width =300μs. 3. f = 1 kHz. Copyright© Msksemi Incorporated www.msksemi.com BZX584C2V4-BZX584C43 Zener Characteristics(VZ Up to 10 V) Zener Characteristics(11 V to 43 V) 100 50 43 39 36 33 27 30 10 10 24 9.1 9 1 20 22 8.2 7.5 6.2 6.8 5.1 5.6 4.7 8 PD =150mW 10 11 12 13 IZ, ZENER CURRENT (mA) Pulsed 10 2.4 IZ, ZENER CURRENT (mA) Ta =25℃ PD =150mW Pulsed 15 16 18 Ta =25℃ 1 0.5 1 2 3 4 5 6 7 0.1 10 11 15 20 VZ, ZENER VOLTAGE (V) Temperature Coefficients 45 50 10 25 20 VZ @ IZT 15 10 5 1 0.1 0.01 Ta=100℃ 1E-3 0 Ta=25℃ 0 4 8 12 16 20 24 32 28 36 40 1E-4 44 0 5 VZ, NOMINAL ZENER VOLTAGE (V) 10 15 20 25 30 40 35 45 VZ, NOMINAL ZENER VOLTAGE (V) Effect of Zener Voltage on Zener Impedance Typical Capacitance 1000 1000 Ta=25℃ Ta=25℃ f=1MHz ZZT, DYNAMIC IMPEDANCE(Ω) 100 1V BIAS BIAS AT 50% OF VZ NOM 10 1 10 IZ(AC)=0.1IZ(DC) IZ=1mA 0V BIAS C, CAPACITANCE (pF) 40 Pulsed FOR BZX584CXXX SERIES 30 1 35 TYPICAL Ta VALUES 35 -5 30 Typical Leakage Current 100 IR, LEAKAGE CURRENT (uA) θVZ, TEMPERATURE COEFFICIENT (mV/℃) 40 25 VZ, ZENER VOLTAGE (V) 100 VZ, NOMINAL ZENER VOLTAGE (V) f=1kHz 100 IZ=5mA 10 1 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Power Derating Curve 150 POWER DISSIPATION PD (mW) 200 100 50 0 0 25 50 75 AMBIENT TEMPERATURE Copyright© Msksemi Incorporated 100 Ta 125 150 (℃ ) www.msksemi.com BZX584C2V4-BZX584C43 PACKAGE MECHANICAL DATA Symbol A A1 b c D E E1 E2 L 0 Dimensions In Millimeters Min 0.510 0.500 0.250 0.080 0.750 1 100 1.500 0.200 REF 0.010 7° REF Max 0.770 0.700 0.350 0. 150 0.850 1 300 1.700 0.070 Dimensions In Inches Min 0.020 0.020 0.010 0.003 0.030 0 043 0.059 0.008 REF 0.001 7 ° REF Max 0.031 0.028 0.014 0.006 0.033 0 051 0.067 0.003 Suggested Pad Layout Note: 1.Controlling dimension:in millimeters. 2.General tolerance:±0.05mm. 3.The pad layout is for reference purposes only. REEL SPECIFICATION P/N PKG QTY BZX584C2V4-BZX584C43 SOD-523 3000 Copyright© Msksemi Incorporated www.msksemi.com BZX584C2V4-BZX584C43 Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not handle applications that require extremely high levels of reliability, such as life-support have specifications that can systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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