X• T ELECTRONICS
BAT54X
Schottky Barrier Diode
SOD-523
FEATURES
Small Package
Extremely Fast Switching Speed
Low Forward Voltage
Surface Mount Package Ideally Suited for Automatic Insertion
MARKING: JV
JV
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Symbol
Limit
Unit
Non-repetitive peak reverse voltage
VRM
30
V
DC blocking voltage
VR
21
V
Average rectified output current
IO
100
mA
Forward continuous current
IF
200
mA
Repetitive peak forward current
IFRM
300
mA
1RQUHSHWLWLYH3HDNForward surge current
#W PV
IFSM
600
mA
Power dissipation
Pd
150
mW
Thermal resistance junction to ambient
RθJA
667
℃/W
Operating Junction Temperature Range
TJ
-40 ~ +125
℃
TSTG
-55 ~ +150
℃
Storage Temperature Range
Electrical Ratings @Ta=25℃
Parameter
Symbol
Conditions
V (BR)
IR=100μA
VF1
IF=0.1mA
240
mV
VF2
=
IF 1.0mA
320
mV
VF3
=
IF 10mA
400
mV
VF4
=
IF 30mA
500
mV
VF5
=
IF 100mA
1000
mV
Reverse current
IR
=
VR 25V
2.0
uA
Reverse recovery time
trr
5.0
ns
Capacitance between terminals
CT
Reverse breakdown voltage
Forward voltage
http://www.xt-elec.com
IF=10mA, IR=10mA to 1mA ,
RL=100Ω
VR=1V,f=1MHz
第1页共3页
Min
Typ
Max
Unit
V
30
10
pF
Rev : B
X• T ELECTRONICS
BAT54X
Schottky Barrier Diode
Typical Characteristics
Reverse Characteristics
Forward Characteristics
200
300
Ta=100℃
(uA)
(mA)
100
Ta =
1
25℃
T=
a 1
00 ℃
IF
REVERSE CURRENT IR
10
FORWARD CURRENT
Pulsed
Pulsed
100
0.1
0.01
0
200
400
600
FORWARD VOLTAGE
VF
1
Ta=25℃
0.1
0.01
800
0
5
10
15
20
REVERSE VOLTAGE
(mV)
Capacitance Characteristics Per Diode
20
10
VR
25
30
(V)
Power Derating Curve
200
Ta=25℃
(mW)
150
PD
15
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
f=1MHz
10
5
0
0
4
8
12
REVERSE VOLTAGE
http://www.xt-elec.com
16
VR
20
100
50
0
0
(V)
25
50
75
AMBIENT TEMPERATURE
第2页共3页
100
Ta
125
(℃ )
Rev : B
X• T ELECTRONICS
BAT54X
Schottky Barrier Diode
SOD-523 Package Outline Dimensions
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0.043
0.051
0.059
0.067
0.008 REF
0.001
0.003
7° REF
SOD-523 Suggested Pad Layout
http://www.xt-elec.com
第3页共3页
Rev : B
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