RB751S-40

    SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for high speed switching and detection applications PINNING DESCRIPTION PIN Features • Small surface mounting type • Low reverse current and low forward voltage • High reliability 1 Cathode 2 Anode       1   D       2 Top View Marking Code: "D" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 40 V Reverse Voltage VR 30 V Mean Rectifying Current IO 30 mA IFSM 200 mA Tj 125 O Tstg - 40 to + 125 O Peak Forward Surge Current (60 Hz, 1 Cycle) Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Symbol Typ. Max. Unit 0.37 V 0.5 µA - pF   Forward Voltage at IF = 1 mA Reverse Current at VR = 30 V Capacitance Between Terminals at VR = 1 V, f = 1 MHz VF - IR - CT 2     Note: ESD sensitive product handling required. 1 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.   2 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.     PACKAGE OUTLINE SOD-523 Plastic surface mounted package; 2 leads 3 of 3 Copyright © All right reserved： Heyuan China Base Electronics Technology Co., Ltd.