1N914WT

1N914WT Silicon Epitaxial Planar Switching Diode PINNING Features • Fast switching speed • Ultra-small surface mount package • For general purpose switching applications DESCRIPTION PIN 1 Cathode 2 Anode 2 1 A Top View Marking Code: "A" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Repetitive Reverse Voltage VRRM 100 V Average Rectified Forward Current IF(AV) 200 mA Non-repetitive Peak Forward Surge Current Pulse Width = 1 s Pulse Width = 1 μs IFSM 0.5 1 A Power Dissipation Ptot 150 mW Thermal Resistance Junction to Ambient RθJA 833 Tj 150 O Tstg - 55 to + 150 O Junction Temperature Storage Temperature Range C/W O C C Electrical Characteristics (Ta = 25 OC) Parameter Symbol Min. Max. Unit Breakdown Voltage at IR = 5 µA at IR = 100 µA VR 75 100 - V V Forward Voltage at IF = 10 mA VF - 1 V Reverse Current at VR = 20 V at VR = 75 V IR - 25 5 nA µA Ctot - 4 pF trr - 4 ns Diode Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100 Ω ® Dated : 15/06/2009 1N914WT ® Dated : 15/06/2009 1N914WT PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ALL ROUND C A ∠ HE D bp E A UNIT A bp C D E HE V mm 0.70 0.60 0.4 0.3 0.135 0.100 1.25 1.15 0.85 0.75 1.7 1.5 0.1 ∠ 5 O ® Dated : 15/06/2009