BAS216WT

BAS216WT Silicon Epitaxial Planar Switching Diode PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 A Top View Marking Code: "A" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit VRRM 85 V Reverse Voltage VR 75 V Continuous Forward Current IF 250 mA IFRM 500 mA IFSM 4 1 0.5 A Ptot 150 mW Tj 150 O Tstg - 65 to + 150 O Symbol Max. Repetitive Peak Reverse Voltage Repetitive Peak Forward Current Non-Repetitive Peak Forward Surge Current at t = 1 µs at t = 1 ms at t = 1 s Power Dissipation Junction Temperature Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA VF Reverse Current at VR = 25 V at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC IR Diode Capacitance at VR = 0 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA to IR = 10 mA, IR = 1 mA, RL = 100 Ω 715 855 1000 1250 Unit mV 30 1 30 50 nA µA µA µA Ctot 1.5 pF trr 4 ns ® Dated : 15/06/2009 BAS216WT ® Dated : 15/06/2009 BAS216WT PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ALL ROUND C A ∠ HE D bp E A UNIT A bp C D E HE V mm 0.70 0.60 0.4 0.3 0.135 0.100 1.25 1.15 0.85 0.75 1.7 1.5 0.1 ∠ 5 O ® Dated : 15/06/2009