YSD200D5-30

SCHOTTKY DIODE YSD200D5-30 Trustworthy electronic circuit protection expert Schottky Barrier Diode FEATURES ●Low current rectification ●Low forward voltage ●SOD523 Micro SMD package ●RoHS compliant ●Cathode Band / Device marking Maximum Ratings（Ta = 25 ℃） Symbol Parameter Value Units VRRM Repetitive Peak Reverse Voltage 30 V VRWM Working Peak Reverse Voltage 30 V 200 mA 1.0 A IO Continuous Forward Current *1 IFSM Non-Repetitive Peak Forward Surge Current PD Power Dissipation 150 mW RθJA Thermal Resistance Junction to Ambient 667 ℃/W TJ Junction Temperature 125 ℃ TSTG Storage Temperature -55 to +125 ℃ Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified Symbol Parameter VF Forward Voltage IR Reverse current Conditions Max Units IF = 10mA 0.35 V IF = 200mA 0.50 V VR= 10V 30 μA Typical Characteristics 1 Min SCHOTTKY DIODE YSD200D5-30 Trustworthy electronic circuit protection expert Package Dimensions Symbol Dimensions in mm Dimensions in inches min max min max A 0.510 0.770 0.020 0.031 A1 0.500 0.700 0.020 0.028 b 0.250 0.350 0.010 0.014 c 0.080 0.150 0.003 0.006 D 0.750 0.850 0.030 0.033 E 1.100 1.300 0.043 0.051 E1 1.500 1.700 0.059 0.067 E2 L θ 0.200REF 0.010 0.070 7°REF 0.008 0.001 0.003 7°REF Disclaimer Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 2