WS7931D-6/TR

WS7931D WS7931D CMOS Medium Band LTE LNA http//:www.sh-willsemi.com Descriptions The WS7931D is a low noise amplifier (LNA) for LTE receiver applications, available in a small 6-pin DFN package. The WS7931D requires only one external inductor for input matching. DFN1107-6L (Bottom view) The WS7931D is designed to achieve low power dissipation and good performance. It is designed and optimized for the LTE medium band: 1805MHz to 2200MHz. GND 1 6 EN VCC 2 5 RFIN RFOUT 3 4 GNDRF Features  Operating frequency: 1805 MHz to 2200 MHz  Noise figure = 1.0 dB  Gain = 12.5 dB  Input 1 dB compression point = -3.5 dBm  In-band input IP3 = +5.0 dBm  Supply voltage: 1.8 V to 3.1 V  Integrated supply decoupling capacitor  Supply current: 6.4 mA  Power-down mode leakage current < 1μA  One external matching inductor required C = Device code  ESD protection: HBM > 2.0kV for all pins * = Month code（A~Z）  Integrated output matching  Package: 6-pin DFN, 1.1 x 0.7 x 0.55 mm3  Process: CMOS Pin configuration (Top view) C * Marking (Top view) Order information Device Applications  Cell phones  Tablets  Other RF front-end modules Will Semiconductor Ltd. WS7931D-6/TR 1 Package Shipping DFN1107-6L 10000/Reel&Tape Feb, 2017 - Rev. 1.6 WS7931D Pinning Information Pin Description 1 GND 2 VCC 3 RFOUT 4 GNDRF 5 RFIN 6 EN Transparent top view GND 1 6 EN VCC 2 5 RFIN RFOUT 3 4 GNDRF Symbol view Application Information Symbol Description Footprint U1 WS7931D 1.1x0.7x0.55 C1 Capacitor C2 L1 mm3 Value Supplier Comment N/A Will-Semi DUT 0402 1 nF Various DC blocking Capacitor 0402 1 nF Various Supply decoupling Inductor 0402 8.2 nH Murata LQW15 Input matching Will Semiconductor Ltd. 2 Feb, 2017 - Rev. 1.6 WS7931D Quick Reference Data Freq = 2000 MHz; VCC = 2.8 V; VEN > 2VCC/3; Temp = 25C; input matched to 50 Ω with an 8.2 nH inductor. The condition is applied unless otherwise specified. Symbol Parameter VCC Supply voltage ICC Supply current Gp Power gain NF Noise figure Condition Min Typ Max Unit 1.8 2.8 3.1 V 6.4 mA f = 2000 MHz 12.5 dB f = 2000 MHz 1.0 dB IP1dB Input power at 1 dB gain compression -3.5 dBm IIP3 Input third-order intercept point +5.0 dBm Recommended Operating Conditions Symbol VCC Temp VEN Parameter Condition Min Supply voltage 1.8 Ambient temperature -40 Input voltage on pin 6 (EN) OFF state ON state 2VCC/3 Typ Max Unit 3.1 V +25 +85 C 0 VCC/3 V VCC V Absolute Maximum Ratings Maximum ratings are absolute ratings, exceeding only one of these values may cause irreversible damage to the integrated circuit. Symbol Parameter Condition Min Max Unit VCC Supply voltage -0.3 3.1 V VEN Input voltage on pin EN -0.3 3.1 V Input voltage on pin RFIN -0.3 3.1 V Input voltage on pin RFOUT -0.3 3.1 V 0 dBm +150 °C 150 °C ±2000 V VRFIN VRFOUT Pin RF input power TSTG Storage temperature TJ Junction temperature VESD ESD capability all pins Will Semiconductor Ltd. -65 Human Body Model (HBM) 3 Feb, 2017 - Rev. 1.6 WS7931D Characteristics 1805 MHz ≤ f ≤ 2200 MHz; VCC = 2.8 V; VEN > 2VCC/3; Temp = 25C; input matched to 50 Ω with an 8.2 nH inductor; The condition is applied unless otherwise specified. Symbol ICC Parameter Supply current Conditions Min On state Typ 6.4 Off state Gp[4] RLin RLout ISL NF IP1dB IIP3 Power gain Max Unit mA 1 μA f = 1850 MHz 12.5 dB f = 2150 MHz 12.1 dB f = 1850 MHz 9.0 dB f = 2150 MHz 8.0 dB f = 1850 MHz 11.0 dB f = 2150 MHz 24.0 dB f = 1850 MHz 34.5 dB f = 2150 MHz 34.0 dB f = 1850 MHz 0.95 dB f = 2150 MHz 1.0 dB Input power at 1 dB gain f = 1850 MHz -3.5 dBm compression f = 2150 MHz -2.5 dBm Input third-order intercept f = 1850 MHz[1] +4.0 dBm point f = 2150 MHz[2] +5.0 dBm Input return loss Output return loss Reverse isolation Noise figure K Rollett stability factor[3] ton Turn-on time 5 μs toff Turn-off time 5 μs 1 [1] f1 = 1840 MHz, f2 = 1850 MHz, Pin = -25 dBm [2] f1= 2140 MHz, f2 = 2150 MHz, Pin = -25 dBm [3] 10M~20GHz Will Semiconductor Ltd. 4 Feb, 2017 - Rev. 1.6 WS7931D Package Outline Dimensions DFN1107-6L Symbol Dimensions In Millimeters Min. Typ. Max. A 0.500 0.550 0.600 A1 0.000 0.025 0.050 A3 0.152REF b 0.150 0.200 0.250 D 0.600 0.700 0.800 E 1.000 1.100 1.200 e 0.400BSC k 0.200REF L 0.124 0.200 L1 Will Semiconductor Ltd. 0.276 0.050REF 5 Feb, 2017 - Rev. 1.6 WS7931D Tape & Reel Dimensions Will Semiconductor Ltd. 6 Feb, 2017 - Rev. 1.6