TTR8MF

TTR8MF

  • 厂商:

    MDD(辰达半导体)

  • 封装:

    TTF

  • 描述:

    快恢复贴片整流器,可降低EMI(传导)

  • 数据手册
  • 价格&库存
TTR8MF 数据手册
TTR8MF Voltage Range - 1000 Volts Current - 8.0 Ampere 8A SURFACE MOUNT BRIDGE RECTIFIERS Features TTF 2 .209(5.30) .193(4.90) 1 - + ~ ~ .346(8.80) .330(8.40)  Fast reverse recovery time  Designed for Surface Mount Application .385(9.80) .370(9.40) .0490(1.25) .0330(0.85)  Reverse Voltage - 1000 V  Forward Current- 8.0 A Mechanical Data 10° .0216(0.55) .0098(0.25) Case: JEDEC TTF molded plastic body Terminals: Solderable per MIL-STD-750,Method 2026 Polarity: Polarity symbol marking on body Mounting Position: Any Weight : 0.0163 ounce, 0.461 grams Top Viev 4 Bottom View .061(1.55) .049(1.25) .068(1.75) .053(1.35) 3 ∠ALL ROUND .401(10.20) .385(9.80) (1) (2) - VM A + ~ ~ (3) (4) Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics (TA=25°C unless otherwise specified) Single phase half-wave 60Hz,resistive or inductive load,for capacitive load currrent derate by 20% . SYMBOL TTR8MF Units Maximum Recurrent Peak Reverse Voltage V RRM 1000 V Maximum RMS voltage V RMS 700 V Maximum DC Blocking Voltage V DC 1000 V PARAMETER IO 8.0 A Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) I FSM 220 A IPeak Forward Surge Current 1.0ms Single Half Sine-wave Superimposed on Rated Load I FSM 350 A I t 2 220 A2S RθJA RθJC RθJL 60 6 14 °C/W T j, T stg -55 ~ +150 °C Average Rectified Output Current at Tc = 100°C 2 I t Rating for Fusing Typical Thermal Resistance(1) Operating and Storage Temperature Range Maximum Ratings And Electrical Characteristics PARAMETER SYMBOL Instantaneous forward voltage VF Reverse current at DC blocking voltage IR Maximum Reverse Recovery Time trr Typical Junction Capacitance Cj TEST CONDITIONS (TA=25°C unless otherwise specified) MIN TYP MAX Units I F =1A I F =4A T J =25℃ T J =25℃ – – 0.83 0.95 – 1.1 I F =1A I F =4A T J =125℃ T J =125℃ – – 0.70 0.85 – – – – 0.15 40 1 200 uA – – 500 ns – 60 – pF T J =25℃ T J =125℃ Measured with I = 0.5 A, IR = 1 A, Irr = 0.25 A . f=1MHz,VR=4V DC T J =25℃ F V Note: 1. Measured at 1MHz and applied reverse voltage of 4 V D.C. 2. P.C.B. mounted with 4×1.5"×1.5"(3.81×3.81 cm)copper pad areas. http://www.microdiode.com Rev:2024A2 Page :1 TTR8MF Voltage Range - 1000 Volts Current - 8.0 Ampere Typical Characterisitics Average Rectified Output Current (A) 10 8.0 6.0 4.0 2.0 Resistive or Inductive Load 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current(μ A) Fig.2 Typical Reverse Characteristics Fig.1 Average Rectified Output Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 T J =25°C 1.0 0.1 pulse with 300μs 1% duty cycle 100 120 140 T J =25°C 100 10 1 0.5 1.0 1.5 2.0 2.5 0.1 210 180 150 120 90 60 8.3 ms Single Half Sine Wave (JEDEC Method) 00 10 Number of Cycles at 60Hz 100 Transient Thermal Impedance( °C /W) 240 1 1.0 10 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak Forward Surage Current (A) 80 1000 Instaneous Forward Voltage (V) 30 60 Fig.4 Typical Junction Capacitance Junction Capacitance (pF) Instaneous Forward Current (A) Fig.3 Typical Instaneous Forward Characteristics 0.01 0.0 40 percent of Rated Peak Reverse Voltage (%) Case Temperature (°C) 10 20 Fig.6- Typical Transient Thermal Impedance 100 10 1 0.01 0.1 1 10 100 t, Pulse Duration(sec) The curve above is for reference only. http://www.microdiode.com Rev:2024A2 Page :2 TTR8MF Voltage Range - 1000 Volts Current - 8.0 Ampere Suggested Pad Layout 5.1 201 1.8×2.1 71×83 8.7 343 http://www.microdiode.com Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. Unit: m m ( mi l) Rev:2024A2 Page :3
TTR8MF 价格&库存

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TTR8MF
  •  国内价格
  • 5+2.54405
  • 50+2.04088
  • 150+1.82531
  • 500+1.55628
  • 3000+1.23920
  • 6000+1.16738

库存:8006

TTR8MF
    •  国内价格
    • 10+4.21730
    • 200+2.51570
    • 800+1.76100
    • 3000+1.25790
    • 6000+1.19500
    • 30000+1.10690

    库存:0