AUD060N08AG

AUA A060N08 8AG, AU UB060N N08AG, AUP060 0N08AG G, AUN N060N08 8AG, AU UD060N N08AG MO OSFET Silic con N-Chan nnel MOS 1. Applicatio ons Synchronou us rectificatio on in SMPS, Hard switch hing and High h speed circu uit DC/DC in te elecoms and inductrial 2. Features Low drain-ssource on-ressistance: RD DS(ON) = 5.6 6mΩ (typ.) High speed power switcching Enhanced body b diode dv/dt d capability Enhanced avalanche a ru uggedness Table 1 Key Perfformance Paramete ers Parameterr V Value Unit VDS @ Tj,maxx 8 80 V RDS(on),max 6 6.0 mΩ Qg,typ 5 55.7 nC C ID,pulse 2 240 A 3. Packagin ng and Inte ernal Circuit Part Nam me Package e AUA060N N08AG AUB060N N08AG AUP060N08AG AUN060N N08AG AUD060N N08AG TO220F TO263 TO220 DFN5x6 TO252 TO22 20F TO263 3 Marking A AUA060N08 8AG AUB060N08AG AUP060N08AG A AUN060N08 8AG A AUD060N08 8AG TO220 TO252 DFN5x6 AUA060N08AG, AUB060N08AG, AUP060N08AG, AUN060N08AG, AUD060N08AG 1 Maximum ratings At Tj= 25°C, unless otherwise specified Table 2 Maximum ratings Parameter Symbol Continuous drain current1) ID Pulsed drain current 2) Values Min. Unit Note / Test Condition 60 A TC=25°C 240 A TC=25°C Typ. Max. - ID,pulse - Avalanche energy, single pulse EAS - - 300 mJ Gate source voltage (static) VGS -20 - 20 V static; Power dissipation (TO220F) Ptot - - 30 W TC=25°C Ptot - - 150 W TC=25°C Ptot - - 74 W TC=25°C Storage temperature Tstg -55 - 175 °C Operating junction temperature Tj -55 - 175 °C Power dissipation (TO263&TO220&TO252) Power dissipation (DFN5x6) 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50 Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical RG 2) AUA060N08AG, AUB060N08AG, AUP060N08AG, AUN060N08AG, AUD060N08AG 2 Thermal characteristics Table 3 Thermal characteristics(TO220F) Parameter Symbol Thermal resistance, junction - case Values Unit Note / Test Condition Min. Typ. Max. RthJC - - 5 °C/W - Thermal resistance, junction - ambient RthJA - - 60 °C/W device on PCB, minimal footprint Table Thermal characteristics(TO263&TO220&TO252) Parameter Symbol Thermal resistance, junction - case Values Unit Note / Test Condition Min. Typ. Max. RthJC - - 1 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint Table Thermal characteristics(DFN5x6) Parameter Symbol Thermal resistance, junction - case Values Unit Note / Test Condition Min. Typ. Max. RthJC - - 1.7 °C/W - Thermal resistance, junction - ambient RthJA - - 50 °C/W device on PCB, minimal footprint AUA060N08AG, AUB060N08AG, AUP060N08AG, AUN060N08AG, AUD060N08AG 3 Electrical characteristics atTj=25°C, unless otherwise specified Table 4 Static characteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note / Test Condition - V VGS=0V, ID=10mA 3.4 V VDS=VGS, ID=250uA Min. Typ. Max. V(BR)DSS 80 - Gate threshold voltage V(GS)th 2.5 Zero gate voltage drain current IDSS Gate-source leakage current - - 1000 nA VDS=80V, VGS=0V, Tj=25°C IGSS - - 100 nA VGS=20V, VDS=0V Drain-source on-state resistance RDS(on) - 5.4 6.0 mΩ VGS=10V, ID=20A, Tj=25°C Gate resistance (Intrinsic) RG - 1.2 - Ω f=1MHz, open drain Unit Note / Test Condition Vds=40V,Vgs=0V f=1MHz Vds=40V,Vgs=0V f=1MHz Vds=40V,Vgs=0V f=1MHz VDD=40V,VGS=10V,RG=10Ω ID=20A VDD=40V,VGS=10V,RG=10Ω ID=20A VDD=40V,VGS=10V,RG=10Ω ID=20A VDD=40V,VGS=10V,RG=10Ω ID=20A Table 5 Dynamic characteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 3730 - pF Output capacitance Coss - 674 - pF Reverse transfer capacitance Crss - 24.24 - pF Turn-on delay time td(on) - 16.5 - ns Rise time tr - 13.7 - ns Turn-off delay time td(off) - 35.9 - ns Fall time tf - 13.45 - ns Table 6 Gate charge characteristics Parameter Symbol Gate to source charge Values Unit Note / Test Condition - nC 13.3 - nC 55.7 - nC VDS=40V,VGS=0 to 10V ID=20A VDS=40V,VGS=0 to 10V ID=20A VDS=40V,VGS=0 to 10V ID=20A Min. Typ. Max. Qgs - 15.9 Gate to drain charge Qgd - Gate charge total Qg - AUA060N08AG, AUB060N08AG, AUP060N08AG, AUN060N08AG, AUD060N08AG Table 7 Reverse diode characteristics Parameter Symbol Diode forward voltage Values Unit Note / Test Condition - V VGS=0V, IF=1A, Tj=25°C 40.9 - ns VR=40V,IF=20A, diF/dt=200A/us - 106.8 - uC VR=40V,IF=20A,diF/dt=200A/us - -3.7 - A VR=40V,IF=20A,diF/dt=200A/us Min. Typ. Max. VSD - 0.7 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm AUA060N08AG, AUB060N08AG, AUP060N08AG, AUN060N08AG, AUD060N08AG 4 Package Outlines Figure1：Outline PG-TO220F AUA060N08AG, AUB060N08AG, AUP060N08AG, AUN060N08AG, AUD060N08AG Figure2：Outline PG-TO263 AUA060N08AG, AUB060N08AG, AUP060N08AG, AUN060N08AG, AUD060N08AG Figure3：Outline PG-TO220 AUA060N08AG, AUB060N08AG, AUP060N08AG, AUN060N08AG, AUD060N08AG Figure4：OutlinePG-TO252 AUA060N08AG, AUB060N08AG, AUP060N08AG, AUN060N08AG, AUD060N08AG Figure5：Outline PG-DFN5x6 AUA060N08AG, AUB060N08AG, AUP060N08AG, AUN060N08AG, AUD060N08AG Revision History Revision Date Subjects (major changes since last revision) 1.0 2021-01-21 Preliminary version 1.1 2021-02-04 Add package for TO263&TO220&DFN5x6&TO252