MDD2N65D

MDD2N65F/MDD2N65P/MDD2N65D 650V N-Channel Enhancement Mode MOSFET TO-220F-3L VDS 650 V ID(Tc=25℃) 2A RDS(on),max 5.2Ω@VGS=10V Qg,typ 10.2nC 2 12 General Features 12 3 3 Ultra low gate charge Low reverse transfer Capacitance Fast switching capability Avalanche energy tested Improved dv/dt capability, high ruggedness      TO-252 TO-220-3L 1 3 Equivalen t Circuit Application    High efeciency switch mode power supplies Electronic lamp ballasts based on half bridge LED power supplies Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 2 A Pulsed Drain Current(Note 1) IDM 8 A EAS 80 mJ IS 2 A Diode pulse current IS,pulse 8 A Peak Diode Recovery dv/dt (Note 3) dv/dt 5 V/ns 27 W 35 W Avalanche Energy Single Pulsed (Note 2) Continuous diode forward current Power Dissipation TO-220F PD Power Dissipation TO-220/TO-252 Junction Temperature TJ 150 ℃ Storage Temperature Tstg -55 ~150 ℃ Thermal Characteristics Parameter Symbol Thermal resistance, Junction-to-case Thermal resistance, Junction-to-ambient Notes: Value Unit TO-220F TO-220/TO-252 RθJC 4.63 3.57 °C/W RθJA 100 62 °C/W 1. Pulse width limited by maximum junction temperature. 2. L=10mH, IAS = 4A, Starting Tj= 25°C. 3. ISD = 2A, di/dt≤100A/us, VDD≤BVDS, Starting Tj= 25°C. 1/9 V 1.0 MDD2N65F/MDD2N65P/MDD2N65D 650V N-Channel Enhancement Mode MOSFET Ta = 25℃ unless otherwise specified Symbol Parameter Condition Min Typ Max Unit VGS=0V, ID=250μA 650 -- -- V Forward VGS=30V, VDS=0V -- -- 100 nA Reverse VGS=-30V, VDS=0V -- -- -100 nA V(BR)DSS Drain-Source Breakdown Voltage IGSS Gate-Source Leakage Current IDSS Drain-Source Leakage Current VDS=650V, VGS=0V -- -- 1 uA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 2.0 -- 4.0 V RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=1A -- 4.2 5.2 Ω Min Typ Max Unit -- 338 -- pF -- 36 -- pF -- 3.4 -- pF -- 10.2 -- nC -- 2.6 -- nC -- 4.7 -- nC Min Typ Max Unit -- -- 17.2 ns -- -- 35.6 ns -- -- 33.9 ns -- -- 29 ns Min Typ Max Unit Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Condition VDS=25V VGS=0V Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge f=1MHz VDS=520V, VGS=10V, ID=2A (Note1,2) Switching Characteristics Symbol Parameter td(on) Turn on Delay Time tr Turn on Rise Time td(off) Turn Off Delay Time tf Turn Off Fall Time Condition VDS=325V, ID=2A, RG=10Ω (Note1,2) Source Drain Diode Characteristics Symbol Parameter Condition ISD Source drain current(Body Diode) -- -- 2 A ISM Pulsed Current -- -- 8 A VSD Drain-Source Diode Forward Voltage IS=2A, VGS=0V -- -- 1.5 V trr Body Diode Reverse Recovery Time VR=400 -- 221.8 -- ns Qrr Body Diode Reverse Recovery Charge -- 0.75 -- uC IF=2A, -diF/dt =100A/µs Notes: 1.Pulse test ; Pulse width≤300us, duty cycle≤2%. 2.Essentially independent of operating temperature. 2/9 V 1.0 MDD2N65F/MDD2N65P/MDD2N65D 650V N-Channel Enhancement Mode MOSFET Electrical Characteristics Diagrams Figure 1. Typical Output Characteristics Figure 2. Transfer Characteristics VGS=10V Tc = 25°C VGS=9V VGS=8V VGS=7V VGS=5.5V VGS=6V Tc = 150°C VGS=4.5V VDS ,Drain−source voltage (V) VGS ,Gate−source voltage (V) Figure 3. On-Resistance Variation vs. Drain Current Figure 4. Threshold Voltage vs. Temperature VGS = 10 V Tc = 25°C Pulse test IDS=0.25 mA Pulse test ID ,Drain current (A) Tj ,Junction temperature (°C) Figure 5. Breakdown Voltage vs. Temperature Figure 6. On-Resistance vs. Temperature VGS=10 V IDS=2 A Pulse test VGS=0 V IDS=0.25 mA Pulse test Tj ,Junction temperature (°C) Tj ,Junction temperature (°C) 3/9 V 1.0 MDD2N65F/MDD2N65P/MDD2N65D 650V N-Channel Enhancement Mode MOSFET Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characterist Ciss Notes:f = 1 MHz,VGS=0 V Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VDS=520 Coss ID = 2 A Crss VDS ,Drain-Source Voltage (V) QG ,Total Gate Charge (nC) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area TO-220F TO-220/ TO-252 100us 100us 10ms Limited by RDS(on) 1ms 10ms 1ms DC Limited by RDS(on) Notes: T = 25°C c Notes: T = 25°C j T = 150°C DC c T = 150°C j Single Pulse Single Pulse VDS ,Drain-Source Voltage (V) VDS ,Drain-Source Voltage (V) Figure 11. Power Dissipation vs. Temperature Figure 12. Power Dissipation vs. Temperature TO-220F TO-220/ TO-252 Tc ,Case temperature (°C) Tc ,Case temperature (°C) 4/9 V 1.0 MDD2N65F/MDD2N65P/MDD2N65D 650V N-Channel Enhancement Mode MOSFET Figure 13. Continuous Drain Current vs. Temperature Figure 14. Body Diode Transfer Characteristics Tc = 150° C Tc = 25°C VSD ,Source-Drain Voltage (V) Tc ,Case temperature (°C) Figure 15 Transient Thermal Impendance,Junction to Case, TO-220F P DM In descending order D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse t Duty = t/T T Z (t)=4.63°C/W Max. θJC t ,Pulse Width (s) Figure 16. Transient Thermal Impendance,Junction to Case, TO-220/ TO-252 In descending order D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse P DM t Duty = t/T Z (t)=3.75°C/W Max.T θJC t ,Pulse Width (s) 5/9 V V 1.0 1.0 MDD2N65F/MDD2N65P/MDD2N65D 650V N-Channel Enhancement Mode MOSFET RL VDS RG VGS VDD D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit 12V 0.2µF 50kΩ 0.3µF Switching Waveforms Same Type as D.U.T. VDS VGS DUT 3mA Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms The curve above is for reference only. 6/9 V 1.0 MDD2N65F/MDD2N65P/MDD2N65D 650V N-Channel Enhancement Mode MOSFET Mechanical Dimensions for TO-220 SYMBOL mm MIN NOM MAX A 4.37 4.57 4.70 A1 A2 b b2 c D D1 D2 E E3 e e1 H1 L L1 ΦP Q 1.25 2.20 0.70 1.17 0.45 15.10 8.80 5.50 9.70 7.00 1.30 2.40 0.80 1.27 0.50 15.60 9.10 10.00 2.54 BSC 5.08 BSC 6.50 13.50 3.10 3.60 2.80 1.40 2.60 0.95 1.47 0.60 16.10 9.40 10.30 - 6.25 12.75 3.40 2.60 7/9 6.85 13.80 3.40 3.80 3.00 V 1.0 MDD2N65F/MDD2N65P/MDD2N65D 650V N-Channel Enhancement Mode MOSFET Mechanical Dimensions for TO-220F SYMBOL E A A1 A4 c D H1 e L L1 ФP ФP3 F3 G3 b1 b2 MIN 9.96 4.50 2.34 2.56 0.40 15.57 12.68 2.88 3.03 3.15 3.15 1.25 1.18 0.70 8/9 mm NOM 10.16 4.70 2.54 2.76 0.50 15.87 6.70REF 2.54BSC 12.98 3.03 3.18 3.45 3.30 1.35 1.28 0.80 MAX 10.36 4.90 2.74 2.96 0.65 16.17 13.28 3.18 3.38 3.65 3.45 1.55 1.43 0.95 V 1.0 MDD2N65F/MDD2N65P/MDD2N65D 650V N-Channel Enhancement Mode MOSFET Mechanical Dimensions for TO-252 SYMBOL A A1 A2 b b3 c D D1 E E1 e H L2 L3 L4 θ MIN 2.20 0.00 0.97 0.68 5.20 0.43 5.98 6.40 4.63 9.40 0.88 0.50 0° mm NOM 2.30 1.07 0.78 5.33 0.53 6.10 5.30REF 6.60 2.286BSC 10.10 0.51BSC - MAX 2.38 0.20 1.17 0.90 5.46 0.61 6.22 6.73 10.50 1.28 1.00 8° Package Marking and Ordering Information Part Number Marking Package Units/Tube MDD2N65F 2N65F TO-220F 50 MDD2N65P 2N65P TO-220-3L 50 MDD2N65D 2N65D TO-252 9/9 Units/Reel 2500 V 1.0