MDD80N03D

MDD80N03D 30V N-Channel Enhancement Mode MOSFET V(BR)DSS RDS(on)Max 6mΩ@10V 30V 9mΩ@4.5V ID Max TO-252 80A 2 Features ● Trench Power LV MOSFET technology ● Excellent package for heat dissipation ● High density cell design for low RDS(ON) ● Halogen Free 3 Application ● High current load applications ● Load switching ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking Equivalen t Circuit XXX: Date Code MDD 1. Gate 2. Drain 3. Source 1 80N03D XXX Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 80 A Pulsed Drain Current (Note 1) IDM 190 A EAS 132 mJ PD 44 W RθJC 2.8 ℃/ W Junction Temperature TJ 150 ℃ Storage Temperature Tstg -50 ~+150 ℃ Avalanche Energy Single Pulsed (Note 2) Power Dissipation Thermal Resistance Junction-to-Case(Note 3) Notes: 1.Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. 2.Tj=25℃, VDD=25V, VG=10V, L=0.5mH, IAS=23A 3.RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design, while RθJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. 1/6 V 1.0 MDD80N03D 30V N-Channel Enhancement Mode MOSFET Ta = 25℃ unless otherwise specified Symbol Parameter Condition Min Typ Max Unit V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 -- -- V IDSS Drain-Source Leakage Current VDS=30V, VGS=0V -- -- 1 uA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 1.5 2.5 V RDS(ON) Drain-Source On-State Resistance VGS=10V, ID=20A -- 3.8 6 mΩ VGS=4.5V, ID=15A -- 4.8 9 mΩ Min Typ Max Unit -- 2504 -- pF -- 323 -- pF -- 283 -- pF -- 54 -- nC -- 8.5 -- nC -- 10.2 -- nC Min Typ Max Unit Dynamic Electrical Characteristics Symbol Parameter Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Condition VDS=15V VGS=0V f=1MHz VDS=15V, Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, ID=20A (Note1,2) Switching Characteristics Symbol Parameter Condition td(on) Turn on Delay Time VDS=20V, -- 11.4 -- ns tr Turn on Rise Time VGS =10V, -- 20.4 -- ns td(off) Turn Off Delay Time -- 41 -- ns tf Turn Off Fall Time -- 25 -- ns Min Typ Max Unit ID=2A, RG=3Ω (Note1,2) Source Drain Diode Characteristics Symbol Parameter Condition ISD Source drain current(Body Diode) -- -- 80 A ISM Pulsed Current -- -- 190 A VSD Drain-Source Diode Forward Voltage IS=20A, VGS=0V -- 0.8 1.2 V trr Body Diode Reverse Recovery Time -- 15.1 -- ns Qrr Body Diode Reverse Recovery Charge IF=20A, VGS=0V, dI/dt=100A/µs -- 6.5 -- nC Notes: 1.Pulse test ; Pulse width 300us, duty cycle 2%. 2.Essentially independent of operating temperature. 2/6 V 1.0 MDD80N03D 30V N-Channel Enhancement Mode MOSFET ■ Typical Performance Characteristics Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance vs. Junction Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge 3/6 V 1.0 MDD80N03D 30V N-Channel Enhancement Mode MOSFET Figure 7. Safe Operation Area Figure 8. Maximum Continuous Drain Current vs Case Temperature Figure 9. Normalized Maximum Transient Thermal Impedance 4/6 V 1.0 MDD80N03D 30V N-Channel Enhancement Mode MOSFET Resistive Switching Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Gate Charge Test Circuit & Waveform Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 5/6 V 1.0 MDD80N03D 30V N-Channel Enhancement Mode MOSFET Outlitne Drawing TO-252 Package Outline Dimensions Suggested Pad Layout Note: 1.Controlling dimension:in/millimeters. 2.General tolerance: ±0.05mm. 3.The pad layout is for reference purposes only. 6/6 V 1.0